Dr. Alexander S. Usikov Profile

Dr. Alexander S. Usikov

at Nitride Crystals Inc

SPIE Involvement:

Author

Publications (5)

Proceedings Article | 13 March 2015 Paper

Identification of point defects in HVPE-grown GaN by steady-state and time-resolved photoluminescence

M. Reshchikov, D. Demchenko, A. Usikov, H. Helava, Yu. Makarov

Proceedings Volume 9363, 93630L (2015) https://doi.org/10.1117/12.2077002

KEYWORDS: Gallium nitride, Luminescence, Electrons, Gallium, Selenium, Zinc, Ultraviolet radiation, Hydrogen, Carbon, Phonons

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Proceedings Article | 12 February 2010 Paper

Lasing of semi-polar InGaN/GaN(1122) heterostructures grown on m-plane sapphire substrates

A. Strittmatter, M. Teepe, C. Knollenberg, Z. Yang, C. Chua, N. Johnson, P. Spiberg, V. Ivantsov, A. Syrkin, L. Shapovalov, A. Usikov

Proceedings Volume 7616, 76160H (2010) https://doi.org/10.1117/12.842177

KEYWORDS: Heterojunctions, Gallium nitride, Sapphire, Quantum wells, Luminescence, Optical pumping, Atomic force microscopy, Laser damage threshold, Crystals, Vapor phase epitaxy

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Proceedings Article | 13 October 2006 Paper

Deep-ultraviolet photodetectors grown by gas source molecular beam epitaxy on sapphire and AlGaN/sapphire substrates

M. Holtz, V. Kuryatkov, D. Song, B. Borisov, S. Nikishin, A. Usikov, V. Dmitriev, Yu. Kudryavtsev, R. Asamoza

Proceedings Volume 6398, 63980Z (2006) https://doi.org/10.1117/12.689938

KEYWORDS: Aluminum nitride, Sapphire, Superlattices, Photodetectors, Absorption, Aluminum, Palladium, Molecular beam epitaxy, Deep ultraviolet, Sensors

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Proceedings Article | 3 March 2006 Paper

Deep UV AlGaN light emitting diodes grown by gas source molecular beam epitaxy on sapphire and AlGaN/sapphire substrates

S. Nikishin, B. Borisov, V. Kuryatkov, A. Usikov, V. Dmitriev, M. Holtz

Proceedings Volume 6121, 61210T (2006) https://doi.org/10.1117/12.657921

KEYWORDS: Light emitting diodes, Aluminum nitride, Gallium, Aluminum, Sapphire, Deep ultraviolet, Luminescence, Magnesium, Ultraviolet light emitting diodes, Metalorganic chemical vapor deposition

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Proceedings Article | 29 December 2004 Paper

AlGaN materials for semiconductor sensors and emitters in 200- to 365-nm range

Alexander Usikov, Elizaveta Shapvalova, Yuri Melnik, Vladimir Ivantsov, Vladimir Dmitriev, Charles Collins, Anand Sampath, Gregory Garrett, Paul Shen, Michael Wraback

Proceedings Volume 5617, (2004) https://doi.org/10.1117/12.578452

KEYWORDS: Gallium nitride, Aluminum nitride, Silicon carbide, Doping, Gallium, Sapphire, Magnesium, Zinc, Ultraviolet radiation, Silicon

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