Dr. Antony Peter Profile

Dr. Antony Peter

at imec

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Author

Publications (2)

Proceedings Article | 25 May 2022 Presentation + Paper

Buried power rail integration for CMOS scaling beyond the 3 nm node

A. Gupta, Z. Tao, D. Radisic, H. Mertens, O. Varela Pedreira, S. Demuynck, J. Bömmels, K. Devriendt, N. Heylen, S. Wang, K. Kenis, L. Teugels, F. Sebaai, C. Lorant, N. Jourdan, B. Chan, S. Subramanian, F. Schleicher, A. Peter, N. Rassoul, Y. Siew, B. Briggs, D. Zhou, E. Rosseel, E. Capogreco, G. Mannaert, A. Sepúlveda, E. Dupuy, K. Vandersmissen, B. Chehab, G. Murdoch, E. Altamirano Sanchez, S. Biesemans, Zs. Tőkei, E. Dentoni Litta, N. Horiguchi

Proceedings Volume 12056, 120560B (2022) https://doi.org/10.1117/12.2615641

KEYWORDS: Ruthenium, Metals, Molybdenum, Etching, Tungsten, Front end of line, Chemical mechanical planarization, Silicon

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Proceedings Article | 20 March 2019 Paper

Fabrication challenges and opportunities for high-mobility materials: from CMOS applications to emerging derivative technologies

N. Collaert, A. Alian, B. De Jaeger, U. Peralagu, A. Vais, A. Walke, L. Witters, H. Yu, E. Capogreco, K. Devriendt, T. Hopf, K. Kenis, G. Mannaert, A. Milenin, A. Peter, F. Sebaai, L. Teugels, D. van Dorp, K. Wostyn, N. Horiguchi, N. Waldron

Proceedings Volume 10963, 1096305 (2019) https://doi.org/10.1117/12.2511746

KEYWORDS: Germanium, Gallium nitride, Gallium arsenide, CMOS technology, Field effect transistors, Fin field effect transistors, Group III-V semiconductors

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