Dr. Bogdan S. Sokolovskii Profile

Dr. Bogdan S. Sokolovskii

Leading Research Scientist at Ivan Franko National Univ. of Lviv

SPIE Involvement:

Author

Publications (12)

Proceedings Article | 26 April 2007 Paper

Calculation of photosensitivity of porous silicon for optoelectronic devices

Liubomyr Monastyrskii, Bogdan Sokolovskii

Proceedings Volume 6636, 66360T (2007) https://doi.org/10.1117/12.742527

KEYWORDS: Silicon, Semiconductors, Spherical lenses, Diffusion, Optoelectronic devices, Mathematical modeling, P-type semiconductors, Absorption, Electrons, Strontium

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Proceedings Article | 7 June 2005 Paper

Peculiarities of graded-gap photodiodes with nonmonotonic coordinate profile of the band gap

Bogdan Sokolovsky, Volodymyr Pysarevsky, Andriy Vlasov, Grygoriy II'chuk

Proceedings Volume 5834, (2005) https://doi.org/10.1117/12.628909

KEYWORDS: Photodiodes, Quantum efficiency, Solids, Semiconductors, Absorption, Signal detection, Photodetectors, Sodium, Neodymium, Reflection

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Proceedings Article | 30 September 2003 Paper

Reverse currents of double-layer heterojunction diodes in conditions of Shockley-Read and Auger carrier generation

Bogdan Sokolovsky, V. Pysarevsky

Proceedings Volume 5126, (2003) https://doi.org/10.1117/12.517356

KEYWORDS: Diodes, Diffusion, Heterojunctions, Electrons, Semiconductors, Sodium, Resistance, Doping, Neodymium, Picosecond phenomena

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Proceedings Article | 12 November 2001 Paper

Photocarrier extraction effect in thin variable-gap photoresistors

Bogdan Sokolovsky, Volodymyr Pysarevsky, Roman Kovtun

Proceedings Volume 4454, (2001) https://doi.org/10.1117/12.448185

KEYWORDS: Photoresistors, Semiconductors, Thin films, Diffusion, Electrons, Mercury, Tellurium, Infrared detectors, Electroluminescence, Infrared photography

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Proceedings Article | 22 February 2001 Paper

Negative differential photoconductivity of thin graded-bandgap layers in conditions of carrier extraction effect

Bogdan Sokolovsky, Volodymyr Pysarevsky, Oleksiy Nemolovsky

Proceedings Volume 4355, (2001) https://doi.org/10.1117/12.417764

KEYWORDS: Semiconductors, Diffusion, Thin films, Photoresistors, Physics, N-type semiconductors, Materials science, Infrared materials, Infrared radiation, Optoelectronics

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Proceedings Article | 28 November 2000 Paper

Analytical calculation of dark voltage-current characteristics of double-layer heterojunction photodiode

Bogdan Sokolovsky, Volodymyr Pysarevsky

Proceedings Volume 4340, (2000) https://doi.org/10.1117/12.407714

KEYWORDS: Photodiodes, Voltage controlled current source, Diffusion, Diodes, Heterojunctions, Resistance, Semiconductors, Electrons, Doping, Sodium

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Proceedings Article | 4 November 1999 Paper

Multilayer structures based on variable-gap semiconductors: carrier redistribution phenomena during current transfer

Volodymyr Savitsky, Bogdan Sokolovsky, Volodymyr Pysarevsky

Proceedings Volume 3890, (1999) https://doi.org/10.1117/12.368377

KEYWORDS: Electrons, Semiconductors, Diffusion, Superlattices, Interfaces, Ferroelectric LCDs, Physics, Polarization, Ionization, Astatine

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Proceedings Article | 4 November 1999 Paper

Influence of semiconductor structure inhomogeneity on electrophysical measurement results

Volodymyr Savitsky, Andrii Vlasov, Alexey Nemolovsky, Bogdan Sokolovsky

Proceedings Volume 3890, (1999) https://doi.org/10.1117/12.368378

KEYWORDS: Semiconductors, N-type semiconductors, Magnetism, Manufacturing, Magnetic semiconductors, Computer simulations, Mercury cadmium telluride, Solids, P-type semiconductors, Numerical analysis

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Proceedings Article | 4 November 1999 Paper

Doping effect on concentration dependence of the diffusion coefficient in semiconductors

Liubomyr Monastyrskii, Bogdan Sokolovsky

Proceedings Volume 3890, (1999) https://doi.org/10.1117/12.368372

KEYWORDS: Diffusion, Semiconductors, Doping, Chemical species, Electrons, Data modeling, Numerical modeling, Solids, Astatine

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Proceedings Article | 8 April 1999 Paper

Photosensitivity of graded-bandgap structures with interfacial recombination states

Volodymyr Savitsky, Bogdan Sokolovsky, Volodymyr Pysarevsky

Proceedings Volume 3725, (1999) https://doi.org/10.1117/12.344755

KEYWORDS: Silicon, Semiconductors, Diffusion, Interfaces, Statistical analysis, Absorption, Lithium, Applied physics, Optical properties, Photoresistors

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