Dr. Hyeong-Soo Kim Profile

Dr. Hyeong-Soo Kim

Research Fellow at SK Hynix Inc

SPIE Involvement:

Author

Publications (42)

Proceedings Article | 27 March 2017 Paper

Factors analysis on the physical properties of the low-temperature SOC of memory cell characteristics

Doyoung Kwak, Jaeyeol Kim, Jihoon Park, Jeonqsu Park, Sungkoo Lee, Seomin Kim, Taewoo Jung, Hyeongsoo Kim

Proceedings Volume 10146, 1014627 (2017) https://doi.org/10.1117/12.2257983

KEYWORDS: Etching, System on a chip, Process control, Factor analysis, Semiconductors, Tolerancing, Semiconducting wafers, Photoresist processing, Optical lithography, Plasma, Inspection

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Proceedings Article | 18 March 2016 Paper

Investigation on the relationship between CD and CDU in memory devices

Jeongsu Park, Daewoo Kim, Keunjun Kim, Choidong Kim, Sungkoo Lee, Hyeongsoo Kim

Proceedings Volume 9778, 97782T (2016) https://doi.org/10.1117/12.2219569

KEYWORDS: Critical dimension metrology, Control systems, Resistance, Metrology, Inspection, Nanoimprint lithography, Photomasks, Semiconducting wafers, Line edge roughness, Electroluminescence, Image compression

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Proceedings Article | 15 March 2016 Paper

Investigation of systematic CD distribution error on intrafield

Keunjun Kim, Daewoo Kim, Junghyun Kang, Inseok Jeong, Sungkoo Lee, Hyeongsoo Kim

Proceedings Volume 9780, 978013 (2016) https://doi.org/10.1117/12.2219562

KEYWORDS: Critical dimension metrology, Etching, SRAF, Photomasks, Scattering, Semiconducting wafers, Mask making, Stray light, Optical lithography, Chemical mechanical planarization, Lithography, Chemical analysis

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Proceedings Article | 31 March 2010 Paper

Mesh patterning process for 40nm contact hole

Kilyoung Lee, Cheolkyu Bok, Jaeheon Kim, Hyunkyung Shim, Junggun Heo, Junghyung Lee, Hyeong-Soo Kim, Donggu Yim, Sung-Ki Park

Proceedings Volume 7639, 76391S (2010) https://doi.org/10.1117/12.846388

KEYWORDS: Optical lithography, Double patterning technology, Image processing, Photoresist processing, Lithography, Etching, Extreme ultraviolet lithography, Critical dimension metrology, Semiconducting wafers, Coating

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Proceedings Article | 26 March 2010 Paper

Topcoat-less resist process for 2Xnm node devices

Changil Oh, Junghyung Lee, Junggun Heo, Hyunkyung Shim, Keundo Ban, Cheolkyu Bok, Donggyu Yim, Sungki Park

Proceedings Volume 7639, 76393A (2010) https://doi.org/10.1117/12.846707

KEYWORDS: Photoresist processing, Line width roughness, Immersion lithography, Scanners, Optical lithography, Bridges, Semiconducting wafers, Etching, Photomasks, Materials processing

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Proceedings Article | 22 March 2010 Paper

Practical flare compensation strategy for DRAM device

Chang-Moon Lim, Jun-Taek Park, James Moon, Sunyoung Koo, Yoonsuk Hyun, Hyeong Soo Kim, Donggyu Yim, Sung-Ki Park

Proceedings Volume 7636, 76362B (2010) https://doi.org/10.1117/12.846509

KEYWORDS: Point spread functions, Extreme ultraviolet lithography, Extreme ultraviolet, Light scattering, Surface roughness, Convolution, Projection systems, Photomasks, Stray light, Optical lithography

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Proceedings Article | 20 March 2010 Paper

Feasibility of EUVL thin absorber mask for minimization of mask shadowing effect

Yoonsuk Hyun, Juntaek Park, Sunyoung Koo, Yongdae Kim, Keundo Ban, Seokkyun Kim, Changmoon Lim, Donggyu Yim, Hyeongsoo Kim, Sungki Park

Proceedings Volume 7636, 763614 (2010) https://doi.org/10.1117/12.846506

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Reticles, Nanoimprint lithography, Critical dimension metrology, Extreme ultraviolet, Printing, Reflectivity, Silicon, Ruthenium

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Proceedings Article | 18 March 2009 Paper

EUV-patterning characterization using a 3D mask simulation and field EUV scanner

Jun-Taek Park, Yoon-Suk Hyun, Chang-Moon Lim, Tae-Seung Eom, Sunyoung Koo, Sarohan Park, Suk-Kyun Kim, Keun-Do Ban, Hyun-Jo Yang, Chang-Il Oh, Byung-Ho Nam, Chang-Reol Kim, HyeongSoo Kim, Seung-Chan Moon, Sungki Park

Proceedings Volume 7271, 72711G (2009) https://doi.org/10.1117/12.814407

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Scanners, Critical dimension metrology, Extreme ultraviolet, Silicon, Optical lithography, Deep ultraviolet, Semiconducting wafers, Laser scanners

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Proceedings Article | 18 March 2009 Paper

Comparative study of DRAM cell patterning between ArF immersion and EUV lithography

Tae-Seung Eom, Sarohan Park, Jun-Taek Park, Chang-Moon Lim, Sunyoung Koo, Yoon-Suk Hyun, HyeongSoo Kim, Byung-Ho Nam, Chang-Reol Kim, Seung-Chan Moon, Noh-Jung Kwak, Sungki Park

Proceedings Volume 7271, 727115 (2009) https://doi.org/10.1117/12.814378

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Extreme ultraviolet, Optical lithography, Double patterning technology, Lithography, Etching, Critical dimension metrology, Scanners, Immersion lithography

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In this paper, we will present comparison of DRAM cell patterning between ArF immersion and EUV lithography which will be the main stream of DRAM lithography. Assuming that the limit of ArF immersion single patterning is around 40nm half pitch, EUV technology is positioned on essential stage because development stage of device manufacturer is going down sub-40nm technology node. Currently lithography technology, in order to improve the limitation of ArF immersion lithography, double patterning technology (DPT) and spacer patterning technology (SPT) have been examined intensively. However, double patterning and spacer patterning technology are not cost-effective process because of complexity of lithography process such as many hard mask stacks and iterative litho, etch process. Therefore, lithography community is looking forward to improving maturity of EUVL technology. In order to overcome several issues on EUV technology, many studies are needed for device application. EUV technology is different characteristics with conventional optical lithography which are non-telecentricity and mask topography effect on printing performance. The printed feature of EUV is shifted and biased on the wafer because of oblique illumination of the mask. Consequently, target CD and pattern position are changed in accordance with pattern direction, pattern type and slit position of target pattern.1 For this study, we make sub-40nm DRAM mask for ArF immersion and EUV lithography. ArF attenuated PSM (Phase Shift Mask) and EUV mask (LTEM) are used for this experiment; those are made and developed by in-house captive maskshop. Simulation and experiment with 1.35NA ArF immersion scanner and 0.25NA EUV full field scanner are performed to characterize EUV lithography and to compare process margin of each DRAM cell. Two types of DRAM cell patterns are studied; one is an isolation pattern with a brick wall shape and another is a storage node pattern with contact hole shape. Line and space pattern is also studied through 24nm to 50nm half pitch for this experiment. Lithography simulation is done by in-house tool based on diffused aerial image model. EM-SUITE and Solid-EUV are also used in order to study characteristics of EUV patterning through rigorous EMF simulation. We also investigated shadowing effect according to pattern shape and design rule respectively. We find that vertical to horizontal bias is around 2nm on 32nm to 40nm half pitch line and space pattern. In the case of DRAM cell, we also find same result with line and space pattern. In view of mask-making consideration, we optimize absorber etch process. So we acquire vertical absorber profile and mask MTT(Mean To Target) within 10% of target CD through several pitch. Process windows and mask error enhancement factors are measured with respect to several DRAM cell pattern. In the case of one dimensional line and space and two dimensional brick wall pattern, vertical pattern shows the best performance through various pitches because of lower shadowing effect than horizontal pattern. But in case of contact hole DRAM cell pattern such as storage node pattern, it has bigger MEF value than one or two dimensional pattern because of independency of shadowing effect. Finally, we compare with 2x, 3x and 4x DRAM cell patterning performance in terms of pattern fidelity, slit CD uniformity and shadowing effect.

Proceedings Article | 4 December 2008 Paper

Study on imaging characterization of ArF high index immersion lithography

Sarohan Park, Jun-Taek Park, Kilyoung Lee, Tae-Seung Eom, Jin-Soo Kim, Hyeong-Soo Kim, Seung-Chan Moon

Proceedings Volume 7140, 71401K (2008) https://doi.org/10.1117/12.804651

KEYWORDS: Photomasks, Optical lithography, Reflectivity, Immersion lithography, Lithography, Image processing, Image enhancement, Polarization, Semiconducting wafers, Transmittance

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Proceedings Article | 24 March 2008 Paper

Alignment system and process optimization for improvement of double patterning overlay

Won-kwang Ma, Jung-hyun Kang, Chang-moon Lim, HyeongSoo Kim, Seung-chan Moon, Sanjay Lalbahadoersing, Seung-chul Oh

Proceedings Volume 6922, 69222T (2008) https://doi.org/10.1117/12.772474

KEYWORDS: Photomasks, Double patterning technology, Semiconducting wafers, Overlay metrology, Etching, Lithography, Extreme ultraviolet, Data modeling, Reticles, Optical alignment

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Proceedings Article | 7 March 2008 Paper

Comparative study of binary intensity mask and attenuated phase shift mask using hyper-NA immersion lithography for sub-45nm era

Tae-Seung Eom, Jun-Taek Park, Jung-Hyun Kang, Sarohan Park, Sunyoung Koo, Jin-Soo Kim, Byoung-Hoon Lee, Chang-Moon Lim, HyeongSoo Kim, Seung-Chan Moon

Proceedings Volume 6924, 69240H (2008) https://doi.org/10.1117/12.772246

KEYWORDS: Photomasks, Chromium, Binary data, Polarization, Pellicles, Diffraction, Scanners, Phase shifts, Lithography, Immersion lithography

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In this paper, we will present comparison of attenuated phase shift mask and binary intensity mask at hyper-NA immersion scanner which has been the main stream of DRAM lithography. Some technical issues will be reported for polarized illumination in hyper-NA imaging. One att.PSM (Phase Shift Mask) and three types of binary intensity mask are used for this experiment; those are ArF att.PSM ( MoSi:Å ), thick Cr ( 1030Å ) BIM (Binary Intensity Mask), thin Cr ( 590Å ) BIM and multi layer ( Cr:740Å / MoSi:930Å ) BIM. Simulation and experiment with 1.35NA immersion scanner are performed to study influence of mask structure, process margin and effect of polarization. Two types of DRAM cell patterns are studied; one is an isolation pattern with a brick wall shape and another is a storage node pattern with contact hole shape. Line and space pattern is also studied through 38nm to 50nm half pitch for this experiment. Lithography simulation is done by in-house tool based on diffused aerial image model. EM-SUITE is also used in order to study the influence of mask structure and polarization effect through rigorous EMF simulation. Transmission and polarization effects of zero and first diffraction order are simulated for both att.PSM and BIM. First and zero diffraction order polarization are shown to be influenced by the structure of masking film. As pattern size on mask decreases to the level of exposure wavelength, incident light will interact with mask pattern, and then transmittance changes for mask structure. Optimum mask bias is one of the important factors for lithographic performance. In the case of att.PSM, negative bias shows higher image contrast than positive one, but in case of binary intensity mask, positive bias shows better performance than negative one. This is caused by balance of amplitude between first diffraction order and zero diffraction order light. Process windows and mask error enhancement factors are measured with respect to various design rules, i.e., different k1 levels at fixed NA. In the case of one dimensional line and space pattern, thick Cr BIM shows the best performance through various pitches. But in case of two dimensional DRAM cell pattern, it is difficult to find out the advantage of BIM for sub-45nm. It needs further study for two dimensional patterns. Finally, it was observed that thick Cr binary intensity mask for sub-45nm has advantage for one dimensional line and space pattern.

Proceedings Article | 7 March 2008 Paper

The analysis of optical lithography at 2-dimensional dense structure

Chanha Park, Tae-Seung Eom, Hyejin Shin, Kiho Yang, Jinyoung Choi, Jinsoo Kim, Hyeongsoo Kim, Donggyu Yim, Jinwoong Kim

Proceedings Volume 6924, 69244V (2008) https://doi.org/10.1117/12.772446

KEYWORDS: Transistors, Optical lithography, Photomasks, Lithography, Printing, 3D image processing, Binary data, Critical dimension metrology, Etching, Photoresist processing

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Proceedings Article | 5 April 2007 Paper

Inspection sensitivity improvement through optimization of lobe blocking on high-end memory devices

Changgoo Lee, Sera Won, Daeyoung Seo, Hyeonsoo Kim, Jinwoong Kim, Jeong-Ho Yeo, Ido Dolev, Chan-Hee Kwak

Proceedings Volume 6518, 65182K (2007) https://doi.org/10.1117/12.711742

KEYWORDS: Signal to noise ratio, Diffraction, Photomasks, Inspection, Defect detection, Signal detection, Light scattering, Deep ultraviolet, Semiconducting wafers, Interference (communication)

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Proceedings Article | 5 April 2007 Paper

Methodical approach to improve defect detection sensitivity on lithography process using DUV inspection system

Changgoo Lee, Sera Won, Daeyoung Seo, Hyeonsoo Kim, Jinwoong Kim, Jeong-Ho Yeo, Ido Dolev, Chan-Hee Kwak

Proceedings Volume 6518, 65182E (2007) https://doi.org/10.1117/12.711740

KEYWORDS: Lithography, Inspection, Scanning electron microscopy, Signal to noise ratio, Deep ultraviolet, Semiconducting wafers, Etching, Defect detection, Particles, 193nm lithography

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Proceedings Article | 11 April 2006 Paper

Development of multi-function hard mask to simplify process step

Kilyoung Lee, Samyoung Kim, Geunsu Lee, Sungkwon Lee, Junhee Cho, Wonkyu Kim, Cheolkyu Bok, Hyeongsoo Kim, Seungchan Moon, Jinwoong Kim

Proceedings Volume 6153, 61532V (2006) https://doi.org/10.1117/12.656870

KEYWORDS: Etching, System on a chip, Photoresist materials, Photomasks, Silicon, Lithography, Reflectivity, Photoresist processing, Chemistry, Carbon

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Proceedings Article | 29 March 2006 Paper

Resolution enhanced top anti reflective coating materials for ArF immersion lithography

Jae-Chang Jung, Sung-Koo Lee, Keun-Do Ban, Cheolkyu Bok, Hyeong-Soo Kim, Seung-Chan Moon, Jinwoong Kim

Proceedings Volume 6153, 61531Z (2006) https://doi.org/10.1117/12.657093

KEYWORDS: Immersion lithography, Fluorine, Antireflective coatings, Resolution enhancement technologies, Semiconducting wafers, Bridges, Lithography, Photoresist materials, Polymers, Liquids

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Proceedings Article | 29 March 2006 Paper

Double exposure technology using silicon containing materials

Sungkoo Lee, Jaechang Jung, Sungyoon Cho, Chang-Moon Lim, Cheolkyu Bok, Hyeongsoo Kim, Seungchan Moon, Jinwoong Kim

Proceedings Volume 6153, 61531K (2006) https://doi.org/10.1117/12.657077

KEYWORDS: Silicon, Etching, Optical lithography, Photomasks, Lithography, Neodymium, Reflectivity, Extreme ultraviolet, Coating

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Proceedings Article | 29 March 2006 Paper

The suppression method of powder formation in ArF photoresist

Geunsu Lee, Heesung Kim, Eungsok Lee, Myoungsoo Kim, Samyoung Kim, Cheolkyu Bok, Hyeongsoo Kim, Seungchan Moon, Jinwoong Kim

Proceedings Volume 6153, 61533F (2006) https://doi.org/10.1117/12.656860

KEYWORDS: Photoresist materials, Polymers, Coating, Semiconducting wafers, Particles, Scanners, Photoresist processing, Lithography, Line edge roughness, Manufacturing

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Proceedings Article | 24 March 2006 Paper

Improvement of alignment and overlay accuracy on amorphous carbon layers

Young-Sun Hwang, Eung-kil Kang, Ki-lyoung Lee, Keun-Do Ban, Cheol-Kyu Bok, Chang-Moon Lim, Hyeong-Soo Kim, Seung-Chan Moon

Proceedings Volume 6152, 615222 (2006) https://doi.org/10.1117/12.656416

KEYWORDS: Optical alignment, Etching, Carbon, Absorption, Photomasks, Reflection, Lithography, Resolution enhancement technologies, Photoresist processing, Optical lithography

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Proceedings Article | 20 March 2006 Paper

Heterogeneous diffusion model for simulation of resist process

Chang Moon Lim, Jun Taek Park, Seo Min Kim, Hyeong Soo Kim, Seung Chan Moon

Proceedings Volume 6154, 61542S (2006) https://doi.org/10.1117/12.656923

KEYWORDS: Diffusion, Lithography, Photoresist processing, Performance modeling, Optical lithography, Photomicroscopy, Image processing, Optical proximity correction, Process modeling, Critical dimension metrology

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Proceedings Article | 15 March 2006 Paper

Positive and negative tone double patterning lithography for 50-nm flash memory

Chang-Moon Lim, Seo-Min Kim, Young-Sun Hwang, Jae-Seung Choi, Keun-Do Ban, Sung-Yoon Cho, Jin-Ki Jung, Eung-Kil Kang, Hee-Youl Lim, Hyeong-Soo Kim, Seung-Chan Moon

Proceedings Volume 6154, 615410 (2006) https://doi.org/10.1117/12.656187

KEYWORDS: Double patterning technology, Lithography, Photomasks, Optical lithography, Neodymium, Etching, Critical dimension metrology, Overlay metrology, Photoresist processing, Semiconducting wafers

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Proceedings Article | 12 May 2005 Paper

Implementation of KrF 0.29 k1 lithography

Hyeong Soo Kim, Seok Kyun Kim, Young Sik Kim, Sang Man Bae, Dong Heok Park, Young Deuk Kim, Yoon Suk Hyun, Hyoung Reun Kim, Keun Kyu Kong, Min Seok Son, Yong Soon Jung, Bong Ho Choi

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.598610

KEYWORDS: Lithography, Photomasks, Optical lithography, Quartz, Optical proximity correction, Device simulation, Lithographic illumination, Manufacturing, Scanners, Photography

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Proceedings Article | 12 May 2005 Paper

Implementation of contact hole patterning performance with KrF resist flow process for 80nm DRAM application

Hyoung-ryeun Kim, DongHeok Park, HyeongSoo Kim

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.600254

KEYWORDS: Optical lithography, Photoresist processing, Photoresist materials, Semiconducting wafers, Lithography, 193nm lithography, Cadmium, Etching, Semiconductors, Oxides

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Proceedings Article | 12 May 2005 Paper

Sub 90nm DRAM patterning by using modified chromeless PSM at KrF lithography era

Young-Sik Kim, Yoon-Suk Hyun, Keun-Kyu Kong, Hyeongsoo Kim, Bong-Ho Choi

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.599216

KEYWORDS: Optical lithography, Photomasks, Lithography, Semiconducting wafers, Printing, Electroluminescence, Mask making, Chromium, Process control, Photomicroscopy

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The Most chip makers want KrF lithography is extended below sub 90nm lithography due to cost and process stability, even though ArF lithography has been growing and its performance is enough to apply to 90nm node. But process control of KrF lithography will become difficult at sub 90nm node because of patterning limitation of KrF lithography. Specially, mask error factor (MEF) is growing to be important for patterning. Generally, chromeless phase shifting mask (PSM) has known widely as a good solution for better patterning than any other PSM, but there are a few companies to apply this mask to their process due to some fatal weakness which are design complexity, difficulties of mask making, control of mask defect, and so on. This paper shows the new modified chromeless HTPSM has solution for some special pattern by using KrF lithography and compares with strong aperture result at 90nm node. The most of island pattern has different MEF with width and length. And patterning control of length axis has been very difficult from mask making to wafer printing. In addition, its control is seriously depended on width axis in the low k1 level. Patterning of storage node contact which is 1:2 duty with width and length axis is very difficult in general DRAM pattern, its MEF is over 5 at width axis and over 15 at length axis in 90nm node. Both axis controls are too hard to achieve good patterning simultaneously. Generally, chromeless PSM has a good MEF performance so we apply and create new modified chromeless HTPSM to overcome our storage node contact pattern. This PSM consist of three layers which are 0° Qz, 180° Qz, and 360° half-tone pattern. 180° Qz pattern play important role in this PSM as a assist pattern to achieve good patterning. First of all, we should make a choice of optimum layout and then we decide on how to make a mask because it is very important factor to control overlay accuracy between 0° Qz and 180° Qz pattern. This overlay accuracy affect to patterning result seriously. Modified chromeless HTPSM has strong patterning performance but overlay accuracy between major and assist pattern will be controlled tightly. This reason is what we hesitate to apply modified chromeless HTPSM to real device development.

Proceedings Article | 26 June 2003 Paper

Printing 95-nm DRAM full chip patterns in KrF lithography

Seok-Kyun Kim, Jin-Soo Kim, Tae-Jun Yoo, Keun-Kyu Kong, Hyoung-Soon Yun, Young-Deuk Kim, Hyoung-Ryeun Kim, Young-Sik Kim, Hyeong-Soo Kim

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485435

KEYWORDS: Lithography, Lithographic illumination, Photomasks, Photoresist processing, Printing, Etching, Semiconducting wafers, Critical dimension metrology, Forward error correction, Optical proximity correction

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Proceedings Article | 26 June 2003 Paper

Sub-100-nm DRAM cell patterning results and relation with lens aberration at 248-nm lithography era

Tae-Jun You, Hyeong-Soo Kim, Jin-Soo Kim, Seok-Kyun Kim, Young-Deuk Kim, Hyeong Sun Youn, Keun-Kyu Kong

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485331

KEYWORDS: Lithography, Reticles, Optical lithography, Lithographic illumination, Monochromatic aberrations, Semiconducting wafers, Resolution enhancement technologies, Chemical mechanical planarization, Photoresist processing, Image processing

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Proceedings Article | 12 June 2003 Paper

Effects of alkali treatment on ArF resist process

Jin-Soo Kim, Jae-Chang Jung, Keun-Kyu Kong, Hyoung-Ryeun Kim, Hyeong-Soo Kim

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.483749

KEYWORDS: Monochromatic aberrations, Photoresist processing, Lithography, Cadmium sulfide, Electroluminescence, Photomasks, 193nm lithography, Silicon, Semiconductors, Reliability

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Proceedings Article | 2 June 2003 Paper

Analysis of total CD uniformity at sub-100-nm DRAM patterning by using KrF lithography

Young-Sik Kim, Tae Jun You, Jin-Soo Kim, Seok-Kyun Kim, Keun-Kyu Kong, Young-Deuk Kim, HyeongSoo Kim

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.485009

KEYWORDS: Photomasks, Lithography, Semiconducting wafers, Optical lithography, Forward error correction, Chemical mechanical planarization, Lithographic illumination, Photoresist processing, Monochromatic aberrations, Critical dimension metrology

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Proceedings Article | 24 July 2002 Paper

Illumination, acid diffusion, and process optimization considerations for 193-nm contact hole resists

Takanori Kudo, Eric Alemy, Ralph Dammel, Woo-Kyu Kim, Sang-Ho Lee, Seiya Masuda, Douglas McKenzie, Dalil Rahman, Andrew Romano, Munirathna Padmanaban, Jun-Sung Chun, Jae Chang Jung, Sung-Koo Lee, Ki-Soo Shin, Hyeong-Soo Kim

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474214

KEYWORDS: Photomasks, Polymers, Lithography, Binary data, Diffusion, Scanning electron microscopy, Halftones, Photoresist processing, Coherence (optics), Monochromatic aberrations

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Proceedings Article | 20 October 2000 Paper

Hardmask/BARC materials for 157-nm lithography

Won Kim, Daniel Miller, Hyeong-Soo Kim, Jeff Byers, Mike Daniels, Britton Birmingham, James Tompkins

Proceedings Volume 4226, (2000) https://doi.org/10.1117/12.404844

KEYWORDS: Etching, Lithography, Dielectrics, Silicon, Silicon carbide, Optical lithography, Absorption, Photoresist processing, Tin, Semiconducting wafers

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Proceedings Article | 23 June 2000 Paper

ArF photoresist containing novel acid labile cross-linker for high contrast and PED stability

Geunsu Lee, Cha-Won Koh, Sung-Eun Hong, Jae Chang Jung, Min-Ho Jung, Hyeong-Soo Kim, Ki-Ho Baik

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388303

KEYWORDS: Etching, Photoresist materials, Lithography, Polymers, Resistance, Critical dimension metrology, Photoresist processing, Scanning electron microscopy, Photoresist developing, Yield improvement

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Proceedings Article | 11 June 1999 Paper

Non-chemically amplified 193-nm top surface imaging photoresist development: polymer substituent and polydispersity effects

Myoung-Soo Kim, Hyoung-Gi Kim, Hyeong-Soo Kim, Ki-Ho Baik, Donald Johnson, George Cernigliaro, David Minsek

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350277

KEYWORDS: Polymers, Photoresist materials, Etching, Lithography, Line edge roughness, Reactive ion etching, Image processing, Scanning electron microscopy, Photomicroscopy, Thin films

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Proceedings Article | 11 June 1999 Paper

Novel e-beam resist with alicyclic olefin moieties for high etch selectivity

Sung-Eun Hong, Chi-Hyeong Roh, Jae Chang Jung, Min-Ho Jung, Hyeong-Soo Kim, Ki-Ho Baik

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350243

KEYWORDS: Etching, Electron beam lithography, Silica, Tungsten, Photoresist materials, Electron beams, Lithography, Polymerization, Resistance, Polymers

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Proceedings Article | 11 June 1999 Paper

Electrical property study of line-edge roughness in top surface imaging process by silylation

Myoung-Soo Kim, Hyoung-Gi Kim, Seung Ho Pyi, Hyeong-Soo Kim, Ki-Ho Baik, Il-Hyun Choi

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350197

KEYWORDS: Line edge roughness, Transistors, Molybdenum, Etching, Critical dimension metrology, Photoresist processing, Optical lithography, Silica, Lithography, Silicon

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Proceedings Article | 11 June 1999 Paper

Novel 193-nm single-layer resist containing a multifunctional monomer

Geunsu Lee, Cha-Won Koh, Jae Chang Jung, Min-Ho Jung, Hyeong-Soo Kim, Ki-Ho Baik, Il-Hyun Choi

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350206

KEYWORDS: Etching, Resistance, Lithography, Photoresist materials, Polymers, Silicon, Scanning electron microscopy, Yield improvement, Photoresist processing, Polymerization

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Proceedings Article | 29 June 1998 Paper

Intrafield critical dimension variation using KrF scanner system for 0.18-um lithography

Donggyu Yim, Hyeong-Soo Kim, Ki-Ho Baik

Proceedings Volume 3334, (1998) https://doi.org/10.1117/12.310813

KEYWORDS: Scanners, Critical dimension metrology, Monochromatic aberrations, Lithography, Stray light, Optical lithography, Photomasks, Photoresist materials, Reticles, Lithographic illumination

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Proceedings Article | 7 July 1997 Paper

Analysis of nonlinear overlay errors by aperture mixing related with pattern asymmetry

Chang-Moon Lim, Ki-Sung Kwon, Donggyu Yim, Dong-Hwan Son, Hyeong-Soo Kim, Ki-Ho Baik

Proceedings Volume 3051, (1997) https://doi.org/10.1117/12.276014

KEYWORDS: Error analysis, Phase shifts, Manufacturing, Monochromatic aberrations

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Proceedings Article | 7 July 1997 Paper

Aberration effects in the region of 0.18 um lithography with KrF excimer stepper

Donggyu Yim, Chang-Moon Lim, Hyeong-Soo Kim, Ki-Ho Baik

Proceedings Volume 3051, (1997) https://doi.org/10.1117/12.276044

KEYWORDS: Monochromatic aberrations, Lithography, Excimers, Distortion, Deep ultraviolet, Optical lithography, Excimer lasers, Lithographic illumination, Laser scanners, 3D scanning

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Proceedings Article | 22 May 1995 Paper

Effective alignment technique and its implementation to enhance total overlay accuracy on highly reflective films

Young-Hong Min, Seung-Chan Moon, Hyeong-Soo Kim, Ki-Ho Baik, Soo-Han Choi

Proceedings Volume 2439, (1995) https://doi.org/10.1117/12.209212

KEYWORDS: Optical alignment, Aluminum, Sputter deposition, Semiconducting wafers, Sensors, Reflectivity, Data transmission, Overlay metrology, Surface roughness, Metals

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Proceedings Article | 16 May 1994 Paper

Characterization of the quarter-micron i-line lithography using a top surface imaging process

Seung-Chan Moon, Hyeong-Soo Kim, Chang-Moon Lim, Tai-Kyung Won, Soo-Han Choi

Proceedings Volume 2195, (1994) https://doi.org/10.1117/12.175354

KEYWORDS: Image processing, Lithography, Polymers, Optical lithography, Photoresist materials, Silicon, Lithographic illumination, Critical dimension metrology, Prototyping, Photoresist processing

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Proceedings Article | 15 September 1993 Paper

Influence of process parameters on the lithographic performance characterization in the top imaging process by silylation

Tai-Kyung Won, Seung-Chan Moon, Hyeong-Soo Kim, Jin-Woong Kim, Myung-Seon Kim, Dong-Jun Ahn, Soo-Han Choi

Proceedings Volume 1925, (1993) https://doi.org/10.1117/12.154804

KEYWORDS: Photoresist processing, Image processing, Lithography, Photoresist materials, Diffusion, Silicon, Photoresist developing, Magnetism, Photomasks, Oxygen

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