Prof. Heinz C. Schweizer Profile

Prof. Heinz C. Schweizer

Research Professor

SPIE Involvement:

Author

Publications (16)

Proceedings Article | 1 May 2012 Paper

Paper

Polarization scrambling with metallic meander structures for space applications

Philipp Schau, Liwei Fu, Karsten Frenner, Heinz Schweizer, Martin Schäferling, Thomas Weiss, Harald Giessen, Luis Miguel Gaspar Venancio, Sandro Hannemann, Wolfgang Osten

Proceedings Volume 8423, 842314 (2012) https://doi.org/10.1117/12.924051

KEYWORDS: Polarization, Terahertz radiation, Transmittance, Plasmonics, Optical components, Aerospace engineering, Metamaterials, Metals, Phase shifts, Linear polarizers

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Proceedings Article | 1 May 2012 Paper

Paper

Experimental demonstration of dispersion engineering through mode interactions in plasmonic microcavities

Liwei Fu, Philipp Schau, Karsten Frenner, Heinz Schweizer, Jun Zhao, Bettina Frank, Larissa Wollet, Patrick Gaiser, Bruno Gompf, Harald Giessen, Wolfgang Osten

Proceedings Volume 8423, 84232I (2012) https://doi.org/10.1117/12.923472

KEYWORDS: Plasmonics, Dispersion, Optical microcavities, Metals, Transmittance, Crystals, Plasmons, Silver, Optical spheres, Mirrors

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Proceedings Article | 15 September 2011 Paper

Paper

Metamaterials for optical and photonic applications for space: preliminary results

L. M. Gaspar Venancio, S. Hannemann, G. Lubkowski, M. Suhrke, H. Schweizer, L. Fu, H. Giessen, P. Schau, K. Frenner, W. Osten

Proceedings Volume 8146, 81460E (2011) https://doi.org/10.1117/12.893110

KEYWORDS: Metamaterials, Polarization, Absorption, Aerospace engineering, Optical filters, Polarization control, Manufacturing, Space telescopes, Beam splitters, Antireflective coatings

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Proceedings Article | 10 September 2011 Paper

Paper

Sub-wavelength imaging using stacks of metallic meander structures with different periodicities

Philipp Schau, Karsten Frenner, Liwei Fu, Wolfgang Osten, Heinz Schweizer, Harald Giessen

Proceedings Volume 8093, 80931K (2011) https://doi.org/10.1117/12.893389

KEYWORDS: Terahertz radiation, Near field, Surface plasmon polaritons, Wave propagation, Plasmons, Radio propagation, Metamaterials, Silver, Surface plasmons, Negative refraction

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Proceedings Article | 8 July 2011 Open Access

Open Access

Paper

The promise of metamaterials for new applications in optics

H. Schweizer, L. Fu, N. Liu, T. Weiss, P. Schau, K. Frenner, W. Osten, H. Giessen

Proceedings Volume 8083, 808302 (2011) https://doi.org/10.1117/12.895026

KEYWORDS: Plasmons, Metamaterials, Dispersion, Plasmonics, Magnetism, Polarization, Particles, Surface plasmons, Electromagnetism, Waveguides

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Proceedings Article | 23 May 2011 Paper

Paper

Rigorous modeling of meander-type metamaterials for sub-lambda imaging

P. Schau, K. Frenner, L. Fu, H. Schweizer, H. Giessen, W. Osten

Proceedings Volume 8083, 808303 (2011) https://doi.org/10.1117/12.889451

KEYWORDS: Terahertz radiation, Near field, Plasmons, Metamaterials, Silver, Surface plasmon polaritons, Negative refraction, Radio propagation, Metals, Wave propagation

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Proceedings Article | 29 April 2010 Paper

Paper

Coupling between surface plasmons and Fabry-Pérot modes in metallic double meander structures

P. Schau, K. Frenner, L. Fu, H. Schweizer, W. Osten

Proceedings Volume 7711, 77111F (2010) https://doi.org/10.1117/12.854214

KEYWORDS: Plasmons, Wave propagation, Metals, Surface plasmon polaritons, Surface plasmons, Silver, Absorption, Reflection, Terahertz radiation, Phase shifts

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Proceedings Article | 23 May 2005 Paper

Paper

Characterization of 1/f noise in GaN-based HEMTs under high dc voltage stress

S. K. Jha, C. F. Zhu, E. Jelenkovic, K. Y. Tong, C. Surya, H. Schweizer, M. Pilkuhn

Proceedings Volume 5844, (2005) https://doi.org/10.1117/12.609283

KEYWORDS: Field effect transistors, Gallium nitride, Ions, Interfaces, Microwave radiation, Reactive ion etching, Temperature metrology, Transistors, Annealing, Heterojunctions

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Proceedings Article | 16 February 2005 Paper

Paper

Red VCSEL for automotive applications

Robert Rossbach, Tabitha Ballmann, Rainer Butendeich, Ferdinand Scholz, Heinz Schweizer, Michael Jetter

Proceedings Volume 5663, (2005) https://doi.org/10.1117/12.597025

KEYWORDS: Vertical cavity surface emitting lasers, Aluminum, Modulation, Gallium, Temperature metrology, Reflectivity, Data modeling, Oxides, Aluminium gallium indium phosphide, Interfaces

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Proceedings Article | 20 December 2004 Paper

Paper

Red light VCSEL for high-temperature applications

Michael Jetter, Robert Rossbach, Rainer Butendeich, Ferdinand Scholz, Tabitha Ballmann, Heinz Schweizer

Proceedings Volume 5594, (2004) https://doi.org/10.1117/12.578279

KEYWORDS: Vertical cavity surface emitting lasers, Aluminum, Reflectivity, Mirrors, Gallium, Temperature metrology, Aluminium gallium indium phosphide, Oxides, Resistance, Oxidation

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Proceedings Article | 25 October 2004 Paper

Paper

Analysis of the modulation behavior of red VCSELs

Tabitha Ballmann, Robert Rossbach, Michael Jetter, Michael Jutzi, Manfred Berroth, Heinz Schweizer

Proceedings Volume 5597, (2004) https://doi.org/10.1117/12.580311

KEYWORDS: Vertical cavity surface emitting lasers, Modulation, Picosecond phenomena, Data communications, Quantum wells, Eye, Photodiodes, Laser damage threshold, Indium gallium phosphide, Phase only filters

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Proceedings Article | 8 December 2003 Paper

Paper

Red surface emitters: powerful and fast

Heinz Schweizer, Tabitha Ballmann, Rainer Butendeich, Robert Rossbach, Bernd Raabe, Michael Jetter, Ferdinand Scholz

Proceedings Volume 5248, (2003) https://doi.org/10.1117/12.512626

KEYWORDS: Vertical cavity surface emitting lasers, Modulation, Data communications, Laser applications, Gallium, Indium gallium phosphide, Temperature metrology, Oxides, Aluminum, Quantum wells

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Vertical cavity surface emitting lasers (VCSEL) in the GaInP/AlGaInP material system have experienced a rapid development in their short history. In general lasers from that material system are suitable for a huge number of applications beginning with TV lasers and high power lasers for edge emitters, continuing with optical data storage, medical applications as well as data communication in cars, air planes, offices and between computers as application field for VCSELs. Especially automotive applications show the highest requirements on a laser with respect to operation temperature and power. In this talk we draw out the problems of the material system AlGaInP and its implications for laser applications. We discuss the epitaxial and technological solutions to overcome at least a part of these inherent problems. We will discuss the possible power that we can expect from VCSELs emitting in the range between 650 nm to 670 nm. We got from our lasers 5 mW, CW @ RT, 670nm and 2.5mW, CW@RT, 650 nm. We emphasize the role of doping, Bragg mirror grading, suitable detuning of cavity mode and gain, and optimisation of the contact layer and control of the oxide aperture in the VCSEL structure to get improved operation characteristics at higher temperatures. From the analysis of high frequency measurements, we could evaluate modulation bandwidths between 4 GHz and 10 GHz. The application of polyimide as a dielectric isolation material shows the potential to obtain modulation bandwidths beyond 10 GHz. For the intrinsic modulation bandwidth we get a value of 25 GHz, which is near the value edge emitters show. A more detailed discussion on photon lifetimes and carrier transport times will be given in the talk. Red light emitting VCSELS driven with short current pulses showed laser emission up to + 160°C case temperature. Thus, a CW operation up to +120°C can be expected after further improvement of power generation (decrease of series resistance) and heat spreading (optimized contacts and mounting). From these characteristics we can conclude that AlGaInP-surface emitting lasers have a real potential as low cost lasers for automotive applications as we all as data communication applications up to 10 GHz.

Proceedings Article | 4 December 2002 Paper

Paper

Monolithically integrated tunable laterally coupled distributed feedback lasers with self-aligned Ti/Pt/Au ohmic contacts

Rupert Schreiner, Peter Naegele, Michael Koerbl, Albert Groening, Jean-Louis Gentner, Heinz Schweizer

Proceedings Volume 4871, (2002) https://doi.org/10.1117/12.457281

KEYWORDS: Tunable lasers, Etching, Reflectors, Channel projecting optics, Semiconductor lasers, Photomasks, Image segmentation, Refractive index, Fiber coupled lasers, Ion beams

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Proceedings Article | 4 December 1998 Paper

Paper

Red AlGaInP-lasers: tunable and powerful

Heinz Schweizer, N. Lichtenstein, H. Gauggel, Justus Kuhn, R. Hofmann, R. Winterhoff, Christian Geng, A. Mortiz, Andreas Hangleiter, Ferdinand Scholz

Proceedings Volume 3491, (1998) https://doi.org/10.1117/12.328678

KEYWORDS: Waveguides, Oscillators, Laser damage threshold, Semiconductor lasers, Resonators, Tunable lasers, Optical amplifiers, High power lasers, Reflectivity, Dry etching

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Proceedings Article | 19 June 1995 Paper

Paper

Optoelectronic nanostructures: physics and technology

Heinz Schweizer, Uwe Griesinger, Volker Haerle, Frank Adler, Manfred Burkard, Frank Barth, Juergen Hommel, Christiane Kaden, Janos Kovac, Justus Kuhn, Bernd Klepser, Georg Lehr, Freek Prins, Ferdinand Scholz, Manfred Pilkuhn, Josef Straka, Alfred Forchel, Gilbert Smith

Proceedings Volume 2399, (1995) https://doi.org/10.1117/12.212517

KEYWORDS: Laser damage threshold, Etching, Photomasks, Nanostructures, Semiconductors, Laser resonators, Quantum efficiency, Resonators, Ions, Dry etching

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Nanostructures based on III-V semiconductor materials have reached a status which enables basic physical studies on size effects in device and in nanostructures. The expected benefits of high modulation bandwidth, low laser threshold, and improved linewidth enhancement factor in DFB lasers, to say only a few, which are believed to be based mainly on the changed density of states (DOS) function in low dimensions might be counterbalanced by altered carrier energy relaxation and k-space filling in those structures. To investigate systematically size effects and device aspects, a continuous change of structure and active device size is needed from 2D to 0D dimensions. This requirement can be met by high resolution electron beam lithography in conjunction with low damage etch processes and epitaxial overgrowth. In this presentation we discuss the technology and design considerations of lasers with low dimensional active regions as well as DOS effects and device relevant carrier relaxation effects. The technology part will focus especially on low damage etch processes such as RIE- ECR. Nearly damage free structuring processes can be demonstrated. Based on this low damage dry etch process we obtained electrically pumped wire DFB lasers with relatively high output power (up to 6 mW) and operation temperature (60 degrees C). Time resolved optical ps-spectroscopy as well as high excitation spectroscopy on wire and dot nanostructures demonstrate strongly changed k-space filling and carrier relaxation mechanisms in low dimensions and represent a serious limitation of device speed. Results obtained from electrically pumped wire DFB lasers confirm the carrier relaxation and k-space filling effects in device structures which have been observed by optical pump experiments in nanostructures. Despite the band filling effects in low dimensional structures, the wire DFB lasers show clearly the expected feature of gain coupling and enhanced differential gain which might demonstrate the applicability of mesoscopic laser devices in common data communication approaches.

Proceedings Article | 6 May 1994 Paper

Paper

Relevant intrinsic parameters for the dynamics of high-speed InGaAs/InGaAsP quantum-well-distributed feedback lasers

Janos Kovac, Heinz Schweizer, H. Schmidt, Christiane Kaden, M. Klenk, R. Weinmann, E. Zielinski

Proceedings Volume 2142, (1994) https://doi.org/10.1117/12.175905

KEYWORDS: Picosecond phenomena, Quantum wells, Pulsed laser operation, Modulation, Diffusion, Resonators, Temperature metrology, Laser scattering, Waveguides, Scattering

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Showing 5 of 16 publications

Conference Committee Involvement (2)

Optoelectronic Devices: Physics, Fabrication, and Application II

24 October 2005 | Boston, MA, United States

Physics and Applications of Optoelectronic Devices

25 October 2004 | Philadelphia, Pennsylvania, United States

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