Dr. Hong K. Choi Profile

Dr. Hong K. Choi

CTO at Kopin Corp

SPIE Involvement:

Author

Proceedings Article | 12 May 2009 Paper

Next-generation AMLCD microdisplays

Tony Bacarella, Tim Hogan, Hong Choi, Mike Presz

Proceedings Volume 7327, 73270E (2009) https://doi.org/10.1117/12.820366

KEYWORDS: Silicon, Image resolution, Video, Clocks, LCDs, Displays, Amplifiers, Semiconducting wafers, Image fusion, Imaging systems

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Proceedings Article | 7 May 2009 Paper

Manufacturable full-color AMLCDs for military head-mounted displays and viewer applications

Hong Choi, Ollie Woodard, Bor-Yeu Tsaur, Brenda Dingle, Edward Yung, Jeffrey Greiman, Ngwe Cheong, Martin Metras, Wen-Foo Chern, Jason Lo, Pin Anupongongarch, Murshed Khandaker, Dave Costa, Frederick Herrmann, Hiap Ong, Colin Reese

Proceedings Volume 7326, 73260G (2009) https://doi.org/10.1117/12.818882

KEYWORDS: LCDs, Clocks, Scanners, Video, Electrodes, Manufacturing, Head-mounted displays, Glasses, Silicon, Semiconducting wafers

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Proceedings Article | 7 April 1998 Paper

Low-threshold high-power high-brightness GaInAsSb/AlGaAsSb quantum well lasers emitting at 2.05 um

Hong Choi, George Turner, James Walpole, M. Manfra, M. Connors, Leo Missaggia

Proceedings Volume 3284, (1998) https://doi.org/10.1117/12.304462

KEYWORDS: Continuous wave operation, Semiconductor lasers, Pulsed laser operation, Semiconducting wafers, Cladding, Laser damage threshold, Quantum wells, Quantum efficiency, Reflectivity, High power lasers

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Proceedings Article | 7 April 1998 Paper

Efficiency and power issues in Sb-based mid-infrared lasers

Han Le, George Turner, Juan Ochoa, Hong Choi, C.H. Lin, Rui Q. Yang, Shin Shem Pei

Proceedings Volume 3284, (1998) https://doi.org/10.1117/12.304453

KEYWORDS: Semiconductor lasers, Quantum efficiency, Absorption, Quantum wells, Prototyping, Solids, Thermal effects, Diamond, Mid-IR, High power lasers

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Proceedings Article | 2 May 1997 Paper

GaInAsSb/AlGaAsSb diode lasers grown by organometallic vapor phase epitaxy

Christine Wang, Hong Choi

Proceedings Volume 3001, (1997) https://doi.org/10.1117/12.273802

KEYWORDS: Semiconductor lasers, Cladding, Vapor phase epitaxy, Quantum wells, Laser damage threshold, Gallium indium arsenide antimonide phosphide, Gallium antimonide, Pulsed laser operation, Gallium, Antimony

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Proceedings Article | 12 April 1996 Paper

InAsSb/InAlAsSb quantum-well diode lasers emitting beyond 3 um

Hong Choi, George Turner, M. Manfra, M. Connors, Frederick Herrmann, Arvind Baliga, Neal Anderson

Proceedings Volume 2682, (1996) https://doi.org/10.1117/12.237668

KEYWORDS: Quantum wells, Semiconductor lasers, Continuous wave operation, Indium arsenide, Cladding, Pulsed laser operation, Gallium antimonide, Semiconducting wafers, Laser applications

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Proceedings Article | 28 April 1995 Paper

GaSb-based mid-infrared quantum well diode lasers

Hong Choi, George Turner

Proceedings Volume 2382, (1995) https://doi.org/10.1117/12.208452

KEYWORDS: Quantum wells, Continuous wave operation, Semiconductor lasers, Pulsed laser operation, Cladding, Aluminum, Laser damage threshold, Mid-IR, Gallium indium arsenide antimonide phosphide

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Proceedings Article | 28 April 1995 Paper

Pulsed anodization technique for fabricating GaSb-based lasers

Craig Largent, Michael Grove, Peter Zory, Hong Choi, George Turner

Proceedings Volume 2382, (1995) https://doi.org/10.1117/12.208453

KEYWORDS: Oxides, Pulsed laser operation, Photoresist materials, Fabrication, Semiconductor lasers, Semiconducting wafers, Laser processing, Quantum wells, Dielectrics, Oxidation

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Proceedings Article | 28 April 1995 Paper

High-power diode-pumped mid-infrared semiconductor lasers

Han Le, George Turner, Hong Choi, Juan Ochoa, Antonio Sanchez, Jose Arias, Majid Zandian, Ricardo Zucca, Yet Zen Liu

Proceedings Volume 2382, (1995) https://doi.org/10.1117/12.208454

KEYWORDS: Semiconductor lasers, High power lasers, Diodes, Mercury cadmium telluride, Quantum wells, Laser packaging, Heterojunctions, Optical pumping, Semiconducting wafers, Reflectivity

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Proceedings Article | 16 February 1993 Paper

InGaAs/AlGaAs strained quantum-well diode lasers

Christine Wang, Hong Choi, James Walpole, Emily Kintzer, Stephen Chinn, Dean Tsang, John Woodhouse, Joseph Donnelly

Proceedings Volume 1788, (1993) https://doi.org/10.1117/12.141105

KEYWORDS: Semiconductor lasers, Optical amplifiers, Laser damage threshold, Sensors, Quantum efficiency, Gallium arsenide, Indium arsenide, Heterojunctions, Continuous wave operation, High power lasers

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Proceedings Article | 1 July 1991 Paper

Low-threshold grating surface-emitting laser arrays

Gary Evans, Nils Carlson, David Bour, So Liew, Robert Amantea, Christine Wang, Hong Choi, James Walpole, Jerome Butler, W. Ferguson

Proceedings Volume 1418, (1991) https://doi.org/10.1117/12.43827

KEYWORDS: Quantum efficiency, Semiconductor lasers, Continuous wave operation, Quantum wells, Laser applications, Coating, Heterojunctions, Gallium arsenide, Pulsed laser operation

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Proceedings Article | 1 May 1990 Paper

High-power hybrid two-dimensional surface-emitting AlGaAs diode laser arrays

Joseph Donnelly, Kurt Rauschenbach, Christine Wang, Robert Bailey, James Walpole, Leo Missaggia, John Woodhouse, Hong Choi, F. O'Donnell, Vicky Diadiuk

Proceedings Volume 1219, (1990) https://doi.org/10.1117/12.18263

KEYWORDS: Laser applications, Semiconductor lasers, Silicon, Pulsed laser operation, Continuous wave operation, Laser damage threshold, High power lasers, Semiconducting wafers, Gallium arsenide

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Showing 5 of 12 publications

SPIE Conference Volume | 1 April 1999

In-Plane Semiconductor Lasers III

SPIE Conference Volume | 7 April 1998

In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II

SPIE Conference Volume | 2 May 1997

In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared

Conference Committee Involvement (3)

In-Plane Semiconductor Lasers III

27 January 1999 | San Jose, CA, United States

In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II

26 January 1998 | San Jose, CA, United States

In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared

10 February 1997 | San Jose, CA, United States

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