Unspecified David P. Bour Profile

David P. Bour

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SPIE Involvement:

Author | Instructor

Publications (26)

Proceedings Article | 4 March 2011 Paper

InAlGaN optical emitters: laser diodes with non-epitaxial cladding layers and ultraviolet light-emitting diodes

Christopher Chua, Zhihong Yang, Clifford Knollenberg, Mark Teepe, Bowen Cheng, Andre Strittmatter, David Bour, Noble Johnson

Proceedings Volume 7939, 793918 (2011) https://doi.org/10.1117/12.875188

KEYWORDS: Cladding, Semiconductor lasers, Gallium nitride, Ultraviolet light emitting diodes, Refractive index, Silver, Light emitting diodes, Indium gallium nitride, Waveguides, Heterojunctions

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Proceedings Article | 18 June 2004 Paper

High-power single-mode 1330- and 1550-nm VCSELs bonded to silicon substrates

Virginia Robbins, Steven Lester, David Bour, Jeffrey Miller, Francoise Mertz

Proceedings Volume 5349, (2004) https://doi.org/10.1117/12.540323

KEYWORDS: Vertical cavity surface emitting lasers, Mirrors, Silicon, Reflectivity, Wafer bonding, Palladium, Quantum efficiency, Semiconducting wafers, Resistance, Modulation

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Proceedings Article | 18 June 2004 Paper

Low-threshold, high-TO and high-efficiency 1300nm and 1500nm lasers with AlInGaAs active region grown by MOCVD

Ashish Tandon, David Bour, Ying Lan Chang, Chao Kun Lin, Scott Corzine, Michael Tan

Proceedings Volume 5349, (2004) https://doi.org/10.1117/12.540319

KEYWORDS: Zinc, Doping, Quantum wells, Laser damage threshold, Quantum efficiency, Metalorganic chemical vapor deposition, Aluminum, Gallium, Internal quantum efficiency, Temperature metrology

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Proceedings Article | 16 June 2004 Paper

Long-wavelength VCSELs with InP/air-gap DBRs

Chao-Kun Lin, David Bour, Jintian Zhu, William Perez, Michael Leary, Ashish Tandon, Scott Corzine, Michael Tan

Proceedings Volume 5364, (2004) https://doi.org/10.1117/12.538327

KEYWORDS: Vertical cavity surface emitting lasers, Quantum efficiency, Modulation, Quantum wells, Continuous wave operation, Indium gallium arsenide, Temperature metrology, Metalorganic chemical vapor deposition, Reflectivity

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Proceedings Article | 9 July 2001 Paper

Nonradiative recombination and efficiency of InGaN quantum well light-emitting diodes

G. B. Ren, Huw Summers, Peter Blood, Richard Perks, David Bour

Proceedings Volume 4283, (2001) https://doi.org/10.1117/12.432626

KEYWORDS: Indium gallium nitride, Quantum wells, Light emitting diodes, Temperature metrology, Quantum efficiency, Gallium nitride, Internal quantum efficiency, Electroluminescence, Sensors, Blood

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Proceedings Article | 18 April 2000 Paper

Advances in laser diode development for high resolution and high-speed printing

Michael Kneissl, David Bour, Noble Johnson

Proceedings Volume 3947, (2000) https://doi.org/10.1117/12.382096

KEYWORDS: Semiconductor lasers, Printing, Continuous wave operation, Cladding, Gallium nitride, Laser development, Sapphire, Nonimpact printing, Quantum wells, Heatsinks

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Proceedings Article | 6 August 1999 Paper

Characterization of InGaN/AlGaN multiple-quantum-well laser diodes

Michael Kneissl, David Bour, Linda Romano, Daniel Hofstetter, Matt McCluskey, Clarence Dunnrowicz, Mark Teepe, Rose Wood, Noble Johnson

Proceedings Volume 3625, (1999) https://doi.org/10.1117/12.356863

KEYWORDS: Semiconductor lasers, Quantum wells, Laser damage threshold, Mirrors, Continuous wave operation, Metalorganic chemical vapor deposition, Indium gallium nitride, Sapphire, Reflectivity, Coating

Proceedings Article | 1 April 1999 Paper

Integration of red, infrared, and blue light sources by wafer fusion

Philip Floyd, Christopher Chua, David Treat, David Bour

Proceedings Volume 3628, (1999) https://doi.org/10.1117/12.344532

KEYWORDS: Light emitting diodes, Gallium nitride, Infrared lasers, Heterojunctions, Quantum wells, Infrared radiation, Gallium arsenide, Etching, Semiconductor lasers, Semiconducting wafers

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Proceedings Article | 7 April 1998 Paper

Material characterization for III-nitride-based light emitters

Michael Kneissl, David Bour, Linda Romano, Brent Krusor, Matt McCluskey, Werner Goetz, Noble Johnson

Proceedings Volume 3279, (1998) https://doi.org/10.1117/12.304411

KEYWORDS: Light emitting diodes, Gallium nitride, Quantum wells, Semiconductor lasers, Indium gallium nitride, Optical properties, Indium, Magnesium, Heterojunctions, Luminescence

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Proceedings Article | 7 April 1998 Paper

Characterization of AlGaInN heterostructures and laser diodes

David Bour, Michael Kneissl, Noble Johnson, Linda Romano, Brent Krusor, Matt McCluskey, Werner Goetz, Ross Bringans

Proceedings Volume 3284, (1998) https://doi.org/10.1117/12.304435

KEYWORDS: Semiconductor lasers, Quantum wells, Heterojunctions, Gallium nitride, Indium gallium nitride, Cladding, Magnesium, Nonimpact printing, X-ray diffraction, Light emitting diodes

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Proceedings Article | 4 April 1997 Paper

Pulsed electrochemical etching of InGaN/GaN LED material

Jeong Seok O, Peter Zory, David Bour

Proceedings Volume 3002, (1997) https://doi.org/10.1117/12.271037

KEYWORDS: Etching, Light emitting diodes, Electrochemical etching, Gallium nitride, Oscilloscopes, Quantum wells, Semiconducting wafers, Ions, Wet etching, Luminescence

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Proceedings Article | 10 January 1997 Paper

Visible laser diodes for printing

David Bour, Ross Bringans, Harlan Chung, David Treat, Werner Goetz, Daniel Hofstetter, Noble Johnson

Proceedings Volume 3000, (1997) https://doi.org/10.1117/12.263491

KEYWORDS: Quantum wells, Semiconductor lasers, Nonimpact printing, Light emitting diodes, Printing, Heterojunctions, Gallium nitride, Cladding, Indium gallium nitride, Optical pumping

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Proceedings Article | 12 April 1996 Paper

TE/TM cross-polarization laser diodes using tensile-strained quantum wells

Decai Sun, David Bour, K. Beernink, David Treat, Ross Bringans

Proceedings Volume 2682, (1996) https://doi.org/10.1117/12.237646

KEYWORDS: Polarization, Quantum wells, Laser damage threshold, Gallium arsenide, Semiconductor lasers, Switching, Absorption, Laser applications, Infrared lasers, Infrared radiation

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Proceedings Article | 12 April 1996 Paper

Internal quantum effeciency measurements of GaInP quantum well laser material using liquid contact luminescence

Chia-Fu Hsu, Craig Largent, Jeong Seok O, C. Young, Peter Zory, David Bour

Proceedings Volume 2682, (1996) https://doi.org/10.1117/12.237650

KEYWORDS: Semiconducting wafers, Internal quantum efficiency, Liquid crystal lasers, Quantum wells, Liquids, Semiconductor lasers, Luminescence, Indium gallium phosphide, Quantum efficiency, Photons

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Proceedings Article | 19 June 1995 Paper

Simple models for the threshold, efficiency, and polarization of AlGaInP red laser diodes

David Bour, K. Beernink, David Treat, Ross Bringans

Proceedings Volume 2399, (1995) https://doi.org/10.1117/12.212526

KEYWORDS: Quantum wells, Polarization, Quantum efficiency, Laser damage threshold, Semiconductor lasers, Data modeling, Diffusion, Transparency, Temperature metrology, Diodes

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Proceedings Article | 28 April 1995 Paper

New diode wavelengths for pumping solid state lasers

Jay Skidmore, Mark Emanuel, Raymond Beach, Barry Freitas, Nils Carlson, Christopher Marshall, William Benett, Richard Solarz, David Bour, David Treat

Proceedings Volume 2382, (1995) https://doi.org/10.1117/12.208438

KEYWORDS: Semiconductor lasers, Diodes, Heatsinks, Silicon, Continuous wave operation, Solid state lasers, Gallium arsenide, Indium gallium arsenide, Absorption, Quantum wells

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Proceedings Article | 17 April 1995 Paper

AlGaInP single quantum well laser diodes

David Bour, David Treat, K. Beernink, Ross Bringans

Proceedings Volume 2380, (1995) https://doi.org/10.1117/12.206954

KEYWORDS: Quantum wells, Semiconductor lasers, Heterojunctions, Continuous wave operation, Laser damage threshold, Quantum efficiency, Cladding, Gallium arsenide, Vapor phase epitaxy, Pulsed laser operation

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Proceedings Article | 1 June 1994 Paper

High-power visible semiconductor lasers

Randall Geels, David Welch, David Bour, David Treat, Ross Bringans

Proceedings Volume 2115, (1994) https://doi.org/10.1117/12.172746

KEYWORDS: Semiconductor lasers, Quantum wells, Continuous wave operation, Visible radiation, High power lasers, Ultraviolet radiation, Broad area laser diodes, Laser damage threshold, Temperature metrology

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Proceedings Article | 1 June 1994 Paper

AlGaInP single quantum well laser diodes

David Bour, K. Beernink, David Treat, Randall Geels, David Welch

Proceedings Volume 2115, (1994) https://doi.org/10.1117/12.172748

KEYWORDS: Quantum wells, Semiconductor lasers, Heterojunctions, Laser damage threshold, Continuous wave operation, Visible radiation, Ultraviolet radiation, Quantum efficiency, Cladding, Aluminium gallium indium phosphide

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Proceedings Article | 26 June 1992 Paper

High power, 8.5 W cw, visible laser diodes

Randall Geels, David Welch, Tony Wang, Donald Scifres, David Bour, David Treat, Ross Bringans

Proceedings Volume 1634, (1992) https://doi.org/10.1117/12.59132

KEYWORDS: Semiconductor lasers, Continuous wave operation, Gallium arsenide, High power lasers, Quantum wells, Technologies and applications, Cladding, Quantum efficiency, Laser damage threshold, Visible radiation

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Proceedings Article | 1 July 1991 Paper

Low-threshold grating surface-emitting laser arrays

Gary Evans, Nils Carlson, David Bour, So Liew, Robert Amantea, Christine Wang, Hong Choi, James Walpole, Jerome Butler, W. Ferguson

Proceedings Volume 1418, (1991) https://doi.org/10.1117/12.43827

KEYWORDS: Quantum efficiency, Semiconductor lasers, Continuous wave operation, Quantum wells, Laser applications, Coating, Heterojunctions, Gallium arsenide, Pulsed laser operation

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Proceedings Article | 1 July 1991 Paper

InGaAs-GaAs strained layer lasers: physics and reliability

James Coleman, Robert Waters, David Bour

Proceedings Volume 1418, (1991) https://doi.org/10.1117/12.43810

KEYWORDS: Gallium arsenide, Quantum wells, Indium gallium arsenide, Laser applications, Reliability, Semiconductor lasers, Data modeling, Quantum efficiency, Physics, Crystals

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Proceedings Article | 1 March 1991 Paper

Two-dimensional edge- and surface-emitting semiconductor laser arrays for optically activated switching

Gary Evans, Arye Rosen, Paul Stabile, David Bour, Nils Carlson, John Connolly

Proceedings Volume 1378, (1991) https://doi.org/10.1117/12.25049

KEYWORDS: Semiconductor lasers, Switching, Mirrors, Laser optics, Gallium arsenide, Quantum efficiency, Switches, Semiconducting wafers, Optical arrays

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Proceedings Article | 1 October 1990 Paper

Study of the band offset in InxGa1-xAs/GaAs system using photoreflectance of single quantum wells

Alexander Ksendzov, Hongen Shen, Fred Pollak, David Bour

Proceedings Volume 1283, (1990) https://doi.org/10.1117/12.20751

KEYWORDS: Quantum wells, Gallium arsenide, Polarization, Physics, Superlattices, Ions, Reflection, Solids, Excitons, Quantum information

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Proceedings Article | 1 May 1990 Paper

Operating characteristics of strained InGaAs/AlGaAs quantum well lasers

David Bour, Ramon Martinelli, Gary Evans, Nils Carlson, Dean Gilbert, Michael Ettenberg

Proceedings Volume 1219, (1990) https://doi.org/10.1117/12.18239

KEYWORDS: Quantum wells, Laser applications, Interfaces, Gallium arsenide, Laser damage threshold, Indium gallium arsenide, Quantum efficiency, Indium arsenide, Semiconductor lasers, GRIN lenses

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Proceedings Article | 1 May 1990 Paper

Coherent cw operation of 2-D grating surface-emitting diode laser arrays

Michael Lurie, Gary Evans, Nils Carlson, David Bour, Robert Amantea, Jacob Hammer, Thomas Bibby, Dean Gilbert, So Liew

Proceedings Volume 1219, (1990) https://doi.org/10.1117/12.18260

KEYWORDS: Laser applications, Continuous wave operation, Semiconductor lasers, Temperature metrology, Visibility, Laser stabilization, Copper, Gallium arsenide, Quantum wells

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Showing 5 of 26 publications

Proceedings Volume Editor (5)

SPIE Conference Volume | 7 February 2007

Novel In-Plane Semiconductor Lasers VI

SPIE Conference Volume | 7 February 2006

Novel In-Plane Semiconductor Lasers V

SPIE Conference Volume | 1 April 2005

Novel In-Plane Semiconductor Lasers IV

SPIE Conference Volume | 11 May 2004

Novel In-Plane Semiconductor Lasers III

SPIE Conference Volume | 3 July 2003

Novel In-Plane Semiconductor Lasers II

Conference Committee Involvement (15)

Novel In-Plane Semiconductor Lasers X

24 January 2011 | San Francisco, California, United States

Novel In-Plane Semiconductor Lasers IX

25 January 2010 | San Francisco, California, United States

Optical Technologies for Arming, Safing, Fuzing, and Firing V

5 August 2009 | San Diego, California, United States

Novel In-Plane Semiconductor Lasers VIII

26 January 2009 | San Jose, California, United States

Optical Technologies for Arming, Safing, Fuzing, and Firing IV

13 August 2008 | San Diego, California, United States

Showing 5 of 15 Conference Committees

Course Instructor

SC054: Group III Nitrides for Optoelectronics - Materials for the Millenium

The course will begin with an outline of the technological importance of nitride semiconductors and an account of their development. The available crystal growth techniques will be described and related to the properties of the resulting thin films or bulk crystals produced. The problems of n- and p-type doping will be considered in the applications to visible LEDs (light emitting diodes) and LDs (laser diodes), followed by a discussion of quantum well structures such as AlGaN/GaN and GaN/InGaN. Some characterization methods will be described and the present state of these materials will be summarized.

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