Dr. Konstantin D. Moiseev Profile

Dr. Konstantin D. Moiseev

at Ioffe Institute

SPIE Involvement:

Author

Proceedings Article | 23 January 2010 Paper

Type II heterostructures with InSb quantum dots inserted into p-n InAs(Sb,P) junction

K. Moiseev, Ya. Parkhomenko, E. Ivanov, S. Kizhaev, M. Mikhailova, V. Nevedomsky, N. Bert, Yu. Yakovlev

Proceedings Volume 7608, 76081R (2010) https://doi.org/10.1117/12.841160

KEYWORDS: Indium arsenide, Heterojunctions, Quantum dots, Electroluminescence, Luminescence, Solids, Liquid phase epitaxy, Interfaces, Binary data, Transmission electron microscopy

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Proceedings Article | 14 February 2009 Paper

InSb quantum dots and quantum rings in a narrow-gap InAsSbP matrix

K. Moiseev, M. Mikhailova, Ya. Parkhomenko, E. Gushchina, S. Kizhaev, E. Ivanov, N. Bert, Yu. Yakovlev

Proceedings Volume 7224, 72240B (2009) https://doi.org/10.1117/12.809312

KEYWORDS: Quantum dots, Indium arsenide, Indium arsenide antimonide phosphide, Liquid phase epitaxy, Atomic force microscopy, Electroluminescence, Transmission electron microscopy, Binary data, Interfaces, Temperature metrology

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Proceedings Article | 18 November 2008 Paper

Photovoltaic detector based on type II p-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostructures with a single quantum well for mid-infrared spectral range

M. Mikhailova, I. Andreev, K. Moiseev, E. Ivanov, N. Stoyanov, Yu. Yakovlev, E. Hulicius, A. Hospodková, J. Pangrác, K. Melichar, T. Simecek

Proceedings Volume 7138, 713813 (2008) https://doi.org/10.1117/12.818007

KEYWORDS: Quantum wells, Heterojunctions, Electroluminescence, Photovoltaic detectors, Mid-IR, Interfaces, Quantum efficiency, Palladium, Photodetectors, Heterodyning

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Proceedings Article | 11 June 2003 Paper

Magnetotransport of 2D-electrons and holes at a type II broken-gap single heterojunction doped with acceptor impurity

Konstantin Moiseev, V. Berezovets, Maya Mikhailova, V. Nizhankovskii, R. Parfeniev, Yury Yakovlev

Proceedings Volume 5023, (2003) https://doi.org/10.1117/12.514547

KEYWORDS: Electrons, Magnetism, Heterojunctions, Zinc, Interfaces, Solids, Metalloids, Liquid phase epitaxy, Doping, Resistance

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Proceedings Article | 11 June 2003 Paper

Interface luminescence and lassing at a type II single broken-gap heterojunction

Konstantin Moiseev, Maya Mikhailova, Yury Yakovlev, Anthony Krier

Proceedings Volume 5023, (2003) https://doi.org/10.1117/12.514303

KEYWORDS: Heterojunctions, Electroluminescence, Luminescence, Quantum efficiency, Fermium, Interfaces, Laser development, Physics, Indium arsenide, Semiconductor lasers

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Proceedings Article | 22 May 2002 Paper

Novel hybrid III-V/II-VI mid-infrared laser structures with high asymmetric band offset confinements

Yury Yakovlev, Sergey Ivanov, Konstantin Moiseev, Andrei Monakhov, Victor Solov'ev, Irina Sedova, Yakov Terent'ev, Alexei Toropov, Maya Mikhailova, Boris Meltzer, Petr Kop'ev

Proceedings Volume 4651, (2002) https://doi.org/10.1117/12.467948

KEYWORDS: Heterojunctions, Electroluminescence, Indium arsenide, Interfaces, Semiconductor lasers, Mid-IR, Quantum wells, Laser applications, Luminescence, Cladding

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Proceedings Article | 22 May 2002 Paper

Type-II diode lasers based on interface recombination at 3.3um

Anthony Krier, Derek Wright, Victoria Ellarby, Victor Sherstnev, Konstantin Moiseev, Yury Yakovlev

Proceedings Volume 4651, (2002) https://doi.org/10.1117/12.467947

KEYWORDS: Heterojunctions, Interfaces, Indium arsenide, Semiconductor lasers, Electroluminescence, Liquid phase epitaxy, Mid-IR, Luminescence, Antimony, Quantum wells

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Proceedings Article | 18 April 2000 Paper

High-power mid-infrared lasers based on type-II heterostructures with asymmetric band offset confinement

Yury Yakovlev, Konstantin Moiseev, Maya Mikhailova, Andrei Monakhov, Anastasia Astakhova, Victor Sherstnev

Proceedings Volume 3947, (2000) https://doi.org/10.1117/12.382093

KEYWORDS: Heterojunctions, Liquid phase epitaxy, Mid-IR, Indium arsenide, Pulsed laser operation, Quantum wells, High power lasers, Electrons, Semiconductor lasers, Continuous wave operation

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Proceedings Article | 2 May 1997 Paper

Suppression of Auger recombination in the diode lasers based on type II InAsSb/InAsSbP and InAs/GaInAsSb heterostructures

Yury Yakovlev, Tamara Danilova, Albert Imenkov, Maya Mikhailova, Konstantin Moiseev, Oleg Ershov, Victor Sherstnev, Georgy Zegrya

Proceedings Volume 3001, (1997) https://doi.org/10.1117/12.273806

KEYWORDS: Heterojunctions, Laser damage threshold, Interfaces, Semiconductor lasers, Electrons, Quantum efficiency, Polarization, Pulsed laser operation, Quantum cascade lasers, Absorption

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Proceedings Article | 24 April 1995 Paper

Electroluminescence of confined carriers in type II broken-gap p-GaInAsSb/p-InAs single heterojunction

Maya Mikhailova, Georgy Zegrya, Konstantin Moiseev, Ivan Timchenko, Igor Andreev, Yury Yakovlev

Proceedings Volume 2397, (1995) https://doi.org/10.1117/12.206866

KEYWORDS: Heterojunctions, Electroluminescence, Electrons, Interfaces, Quantum wells, Indium arsenide, Semiconductors, Semiconductor lasers, Tunable lasers, Magnetism

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Proceedings Article | 1 September 1991 Paper

New semiconductor material A1xInAsySb/InAs: LPE synthesis and properties

N. Charykov, Alexandr Litvak, Konstantin Moiseev, Yury Yakovlev

Proceedings Volume 1512, (1991) https://doi.org/10.1117/12.47163

KEYWORDS: Liquid phase epitaxy, Solids, Aluminum, Liquids, Indium arsenide, Antimony, Optoelectronic devices, Infrared materials, Infrared radiation, Optoelectronics

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Showing 5 of 11 publications

Conference Committee Involvement (3)

Infrared Optoelectronics: Materials and Devices

4 September 2012 | Evanston, Illinois, United States

Quantum Sensing and Nanophotonic Devices VII

24 January 2010 | San Francisco, California, United States

Quantum Sensing and Nanophotonic Devices VI

25 January 2009 | San Jose, California, United States

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