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Krzysztof Golyga
at Institute of High Pressure Physics
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Publications (1)
Proceedings Article | 9 March 2024 Presentation
Influence of InGaN underlayer on efficiency of LEDs grown by plasma-assisted molecular beam epitaxy
Greg Muziol, Mateusz Hajdel, Marcin Siekacz, Mikolaj Zak, Krzysztof Golyga, Anna Feduniewicz-Zmuda, Henryk Turski, Czeslaw Skierbiszewski
Proceedings Volume PC12886, PC1288619 (2024) https://doi.org/10.1117/12.3002699
KEYWORDS: Light emitting diodes, Indium gallium nitride, Molecular beam epitaxy, Quantum wells, Gallium nitride, Vapor phase epitaxy, Quantum physics, Internal quantum efficiency, Indium
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