Mr. Nathan D. Jarnagin Profile

Nathan D. Jarnagin

Scientist at KLA Corp

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Author

Publications (9)

Proceedings Article | 5 April 2013 Paper

PS-b-PHOST as a high X block copolymers for directed self assembly: optimization of underlayer and solvent anneal processes

Nathan Jarnagin, Wei-Ming Yeh, Jing Cheng, Andrew Peters, Richard Lawson, Laren Tolbert, Clifford Henderson

Proceedings Volume 8680, 86801X (2013) https://doi.org/10.1117/12.2021420

KEYWORDS: Polymers, Annealing, Polymerization, Scanning electron microscopy, Picosecond phenomena, Thin films, Nitrogen, Directed self assembly, Polymer thin films, Glasses

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Proceedings Article | 5 April 2013 Paper

PS-b-PHEMA: synthesis, characterization, and processing of a high X polymer for directed self-assembly lithography

Jing Cheng, Richard Lawson, Wei-Ming Yeh, Nathan Jarnagin, Laren Tolbert, Clifford Henderson

Proceedings Volume 8680, 86801W (2013) https://doi.org/10.1117/12.2021417

KEYWORDS: Polymers, Annealing, Lithography, FT-IR spectroscopy, Optical lithography, Etching, Magnesium, Solids, Polymerization, Directed self assembly

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Proceedings Article | 5 April 2013 Paper

PS-b-PAA as a high X polymer for directed self-assembly: a study of solvent and thermal annealing processes for PS-b-PAA

Jing Cheng, Richard Lawson, Wei-Ming Yeh, Nathan Jarnagin, Laren Tolbert, Clifford Henderson

Proceedings Volume 8680, 86801V (2013) https://doi.org/10.1117/12.2021414

KEYWORDS: Annealing, Polymers, Scanning electron microscopy, Picosecond phenomena, Silicon, Semiconducting wafers, Etching, Polymerization, Solids, Directed self assembly

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Proceedings Article | 16 April 2012 Paper

Investigation of high x block copolymers for directed self-asssembly: synthesis and characterization of PS-b-PHOST

Nathan Jarnagin, Jing Cheng, Andrew Peters, Wei-Ming Yeh, Richard Lawson, Laren Tolbert, Clifford Henderson

Proceedings Volume 8323, 832310 (2012) https://doi.org/10.1117/12.918081

KEYWORDS: Polymerization, Polymers, Optical lithography, Lithography, Scanning electron microscopy, Annealing, Molecular self-assembly, Directed self assembly, Glasses, FT-IR spectroscopy

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Proceedings Article | 16 April 2012 Paper

Directed self-assembly of poly(styrene)-block-poly(acrylic acid) copolymers for sub-20nm pitch patterning

Jing Cheng, Richard Lawson, Wei-Ming Yeh, Nathan Jarnagin, Andrew Peters, Laren Tolbert, Clifford Henderson

Proceedings Volume 8323, 83232R (2012) https://doi.org/10.1117/12.918073

KEYWORDS: Polymers, Optical lithography, Lithography, Etching, Polymerization, Plasma etching, Annealing, Solids, Plasma, Directed self assembly

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Directed self-assembly (DSA) of block copolymers is a promising technology for extending the patterning capability of current lithographic exposure tools. For example, production of sub-40 nm pitch features using 193nm exposure technologies is conceivably possible using DSA methods without relying on time consuming, challenging, and expensive multiple patterning schemes. Significant recent work has focused on demonstration of the ability to produce large areas of regular grating structures with low numbers of defects using self-assembly of poly(styrene)-b-poly(methyl methacrylate) copolymers (PS-b-PMMA). While these recent results are promising and have shown the ability to print pitches approaching 20 nm using DSA, the ability to advance to even smaller pitches will be dependent upon the ability to develop new block copolymers with higher χ values and the associated alignment and block removal processes required to achieve successful DSA with these new materials. This paper reports on work focused on identifying higher χ block copolymers and their associated DSA processes for sub-20 nm pitch patterning. In this work, DSA using polystyrene-b-polyacid materials has been explored. Specifically, it is shown that poly(styrene)-b-poly(acrylic acid) copolymers (PS-b-PAA) is one promising material for achieving substantially smaller pitch patterns than those possible with PS-b-PMMA while still utilizing simple hydrocarbon polymers. In fact, it is anticipated that much of the learning that has been done with the PS-b-PMMA system, such as development of highly selective plasma etch block removal procedures, can be directly leveraged or transferred to the PS-b-PAA system. Acetone vapor annealing of PS-b-PAA (M_w=16,000 g/mol with 50:50 mole ratio of PS:PAA) and its self-assembly into a lamellar morphology is demonstrated to generate a pattern pitch size (L₀) of 21 nm. The χ value for PS-b-PAA was estimated from fingerprint pattern pitch data to be approximately 0.18 which is roughly 4.5 times greater than the χ for PS-b-PMMA (_χPS-b-PMMA ~ 0.04).

Proceedings Article | 23 March 2007 Paper

Novel polymeric anionic photo-acid generators (PAGs) and photoresists for sub-100-nm patterning by 193-nm lithography

Mingxing Wang, Nathan Jarnagin, Wang Yueh, Jeanette Roberts, Melina Tapia-Tapia, Nikola Batina, Kenneth Gonsalves

Proceedings Volume 6519, 65192C (2007) https://doi.org/10.1117/12.711477

KEYWORDS: Polymers, Fluorine, Line edge roughness, Lithography, Photoresist materials, Optical lithography, Polymerization, Etching, Resistance, Semiconducting wafers

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Proceedings Article | 23 March 2007 Paper

Photosensitivity and line-edge roughness of novel polymer-bound PAG photoresists

Cheng-Tsung Lee, Mingxing Wang, Nathan Jarnagin, Kenneth Gonsalves, Jeanette Roberts, Wang Yueh, Clifford Henderson

Proceedings Volume 6519, 65191E (2007) https://doi.org/10.1117/12.713369

KEYWORDS: Polymers, Line edge roughness, Lithography, Analog electronics, Diffusion, Image resolution, Polymer thin films, Silicon, Photoresist materials, Semiconducting wafers

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Substantially improved photoresist material designs, which can provide higher photosensitivity and precise critical dimension and edge roughness control, will be required to enable the application of next generation lithography technology to the production of future sub-65 nm node IC device generations. The development and characterization of novel material platforms that solve the aforementioned basic problems with chemically amplified resists (CARs) is essential and is already one of the major subjects of modern lithography research. In that regard, we have pursued development of a variety of 193 nm and EUV CARs that contain photoacid generator (PAG) units covalently bonded directly to the resin polymer backbone. However, the detailed structure-property relationships that result from this direct attachment of the PAG functional group to the polymer have previously not yet been rigorously characterized. In this work, the lithographic properties of a polymer-bound PAG CAR (GBLMA-co-EAMA-co-F4-MBS.TPS) and its blended-PAG analog resist (GBLMA-co-EAMA blend F4-IBBS.TPS) were studied and compared. The direct incorporation of PAG functionality into the resist polymer, where the resulting photoacid remains bound to the polymer, showed improved photosensitivity, resolution, and lower LER as compared with the analogous blended-PAG resist. The improved resolution and LER were expected due to the restricted photoacid diffusion and uniform PAG distribution provided by direct incorporation of the PAG into the polymer backbone to make a single-component resist material. The ability to load higher levels of PAG into the resist provided by this PAG incorporation into the polymer, as compared to the low PAG concentrations attainable by traditional blending approaches, overcomes the sensitivity loss that should result from reduction in photoacid diffusivity and concomitant smaller acid-catalytic chain lengths. In fact, the polymer-bound PAG resist achieves a faster photospeed than the blended-PAG analog material under DUV radiation in the case of the materials reported here while still providing all of the aforementioned improvements such as the improved line edge roughness.

Proceedings Article | 31 March 2006 Paper

Fundamental studies of the properties of photoresists based on resins containing polymer-bound photoacid generators

Cheng-Tsung Lee, Nathan Jarnagin, Mingxing Wang, Kenneth Gonsalves, Jeanette Robert, Wang Yueh, Clifford Henderson

Proceedings Volume 6153, 61532E (2006) https://doi.org/10.1117/12.663410

KEYWORDS: Polymers, Data modeling, Diffusion, Photoresist materials, FT-IR spectroscopy, Statistical modeling, Molecules, Extreme ultraviolet lithography, Polymer thin films, Reflectivity

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Proceedings Article | 29 March 2006 Paper

Resists for sub-100nm patterning at 193nm exposure

N. Jarnagin, K. Gonsalves, M. Wang, J. Roberts, W. Yeuh

Proceedings Volume 6153, 61534P (2006) https://doi.org/10.1117/12.656457

KEYWORDS: Polymers, Polymerization, Scanning electron microscopy, Optical lithography, Line edge roughness, Semiconducting wafers, Chemically amplified resists, Roads, Diffusion, Applied research

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Showing 5 of 9 publications

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