Mr. Philippe Gilet Profile

Philippe Gilet

CTO at Aledia

SPIE Involvement:

Author

Publications (12)

Proceedings Article | 14 March 2023 Presentation + Paper

GaN-on-silicon nanowire technology for microLED devices.

Pierre Tchoulfian, Ulrich Steegmueller, Benoît Amstatt, Markus Broell, Philippe Gilet

Proceedings Volume 12441, 1244109 (2023) https://doi.org/10.1117/12.2652105

KEYWORDS: Nanowires, RGB color model, Nanotechnology, Electroluminescence, Quantum dot emission, Semiconducting wafers, Light emitting diodes, Silicon, Mixed reality, LED displays

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Proceedings Article | 6 February 2010 Paper

High-index-contrast subwavelength grating VCSEL

Philippe Gilet, Nicolas Olivier, Philippe Grosse, Karen Gilbert, Alexei Chelnokov, Il-Sug Chung, Jesper Mørk

Proceedings Volume 7615, 76150J (2010) https://doi.org/10.1117/12.840884

KEYWORDS: Vertical cavity surface emitting lasers, Mirrors, Oxides, Reflectivity, Quantum wells, Optical design, Photonic crystals, Silicon, Semiconductor lasers, Oxidation

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Proceedings Article | 19 May 2008 Paper

Microstructured photonic crystal for single-mode long wavelength VCSELs

Renaud Stevens, Philippe Gilet, Alexandre Larrue, Laurent Grenouillet, Nicolas Olivier, Philippe Grosse, Karen Gilbert, Bertrand Hladys, Badhise Ben Bakir, Jesper Berggren, Mattias Hammar, Alexei Chelnokov

Proceedings Volume 6997, 69970X (2008) https://doi.org/10.1117/12.783317

KEYWORDS: Vertical cavity surface emitting lasers, Photonic crystals, Near field optics, Mirrors, Quantum wells, Near field, Wafer-level optics, Indium gallium arsenide, Semiconducting wafers, Oxidation

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Proceedings Article | 14 May 2008 Paper

Very compact FTTH Diplexer design using advanced wafer level fabrication methods

Christophe Kopp, Philippe Grosse, Philippe Gilet, Nicolas Olivier, Alexei Chelnokov, Laurent Fulbert, Stéphane Bernabé, Cyrille Rossat, Régis Hamelin, Ivar Hamberg, Lennart Lundqvist, Nicolae Chitica, Matthias Hammar, Jesper Berggren, Stéphane Junique, Qin Wang, Susanne Almqvist, Christian Sillans

Proceedings Volume 6992, 699203 (2008) https://doi.org/10.1117/12.779746

KEYWORDS: Vertical cavity surface emitting lasers, Photodiodes, Signal detection, Fiber to the x, Mirrors, Optics manufacturing, Receivers, Packaging, Reflectivity, Semiconducting wafers

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Proceedings Article | 6 May 2008 Paper

Vertical microcavities based on photonic crystal mirrors for III-V/Si integrated microlasers

Lydie Ferrier, Salim Boutami, Fabien Mandorlo, Xavier Letartre, Pedro Rojo Romeo, Pierre Viktorovitch, Philippe Gilet, Badhise Ben Bakir, Philippe Grosse, Jean-Marc Fedeli, Alexei Chelnokov

Proceedings Volume 6989, 69890W (2008) https://doi.org/10.1117/12.781328

KEYWORDS: Mirrors, Waveguides, Silicon, Silica, Optical microcavities, Reflectivity, Photonic crystals, Reflectors, Amorphous silicon, Photons

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Proceedings Article | 15 February 2008 Paper

ZnO nanowires for solid state lightening: from epitaxy and collective integration to optical and electrical characterization

E. Latu-Romain, P. Gilet, I.-C. Robin, P. Noel, P. Ferret, M. Lafossas, S. Gidon, A. Maisse, M. Rosina, F. Lévy, A. Chelnokov

Proceedings Volume 6895, 68950U (2008) https://doi.org/10.1117/12.765480

KEYWORDS: Zinc oxide, Atomic force microscopy, Luminescence, Crystals, Excitons, Epitaxy, Integrated optics, Minerals, Coating, Nanowires

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Proceedings Article | 1 February 2008 Paper

Singlemode 1.1 µm InGaAs quantum well microstructured photonic crystal VCSEL

Renaud Stevens, Philippe Gilet, Alexandre Larrue, Laurent Grenouillet, Nicolas Olivier, Philippe Grosse, Karen Gilbert, Raphael Teysseyre, Alexei Chelnokov

Proceedings Volume 6908, 69080D (2008) https://doi.org/10.1117/12.760052

KEYWORDS: Vertical cavity surface emitting lasers, Photonic crystals, Quantum wells, Indium gallium arsenide, Wafer-level optics, Semiconducting wafers, Mirrors, Continuous wave operation, Waveguides, Oxidation

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Proceedings Article | 2 October 2007 Paper

Semiconductor nanowires for solid state lighting: simulation, epitaxy, integration, optical and electrical characterization

F. Levy, Y. Desieres, P. Ferret, S. Fichet, S. Gidon, P. Gilet, P. Noel, I.-C. Robin, E. Romain-Latu, M. Rosina, R. Songmuang, G. Feuillet, B. Daudin, A. Chelnokov

Proceedings Volume 6797, 67970P (2007) https://doi.org/10.1117/12.768615

KEYWORDS: Zinc oxide, Gallium nitride, Silicon, Light emitting diodes, Semiconductors, Crystals, Aluminum, Scanning electron microscopy, Excitons, Nanowires

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Proceedings Article | 23 February 2007 Paper

1.3 µm VCSELs: InGaAs/GaAs, GaInNAs/GaAs multiple quantum wells, and InAs/GaAs quantum dots — three candidates as active material

Ph. Gilet, E. Pougeoise, L. Grenouillet, Ph. Grosse, N. Olivier, S. Poncet, A. Chelnokov, J. M. Gérard, R. Stevens, R. Hamelin, M. Hammar, J. Berggren, P. Sundgren

Proceedings Volume 6484, 64840F (2007) https://doi.org/10.1117/12.700403

KEYWORDS: Vertical cavity surface emitting lasers, Oxides, Indium gallium arsenide, Quantum wells, Gallium arsenide, Aluminum, Quantum dots, Gallium, Continuous wave operation, Oxidation

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Proceedings Article | 7 July 2006 Paper

GaIn(N)As/GaAs VCSELs emitting in the 1.1-1.3 μm range

L. Grenouillet, P. Duvaut, N. Olivier, P. Gilet, P. Grosse, S. Poncet, P. Philippe, E. Pougeoise, L. Fulbert, A. Chelnokov

Proceedings Volume 6350, 63500G (2006) https://doi.org/10.1117/12.692829

KEYWORDS: Vertical cavity surface emitting lasers, Quantum wells, Doping, Oxides, Nitrogen, Continuous wave operation, Mirrors, Gallium arsenide, Molecular beam epitaxy, Photonics

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Proceedings Article | 21 April 2006 Paper

Experimental characteristics and analysis of transverse modes in 1.3-µm strained InGaAs quantum well VCSELs

E. Pougeoise, Ph. Gilet, Ph. Grosse, S. Poncet, A. Chelnokov, J.-M. Gérard, G. Bourgeois, R. Stevens, R. Hamelin, M. Hammar, J. Berggren, P. Sundgren, Sébastien Vilain, J.-S. Bouillard, G. Lerondel, R. Bachelot, P. Royer

Proceedings Volume 6185, 61850U (2006) https://doi.org/10.1117/12.662118

KEYWORDS: Vertical cavity surface emitting lasers, Oxides, Quantum wells, Indium gallium arsenide, Near field scanning optical microscopy, Near field optics, Continuous wave operation, Gallium arsenide, Optical fibers, Semiconducting wafers

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Proceedings Article | 10 February 2006 Paper

1.3 μm strained InGaAs quantum well VCSELs: operation characteristics and transverse modes analysis

E. Pougeoise, Ph. Gilet, Ph. Grosse, S. Poncet, A. Chelnokov, J.-M. Gérard, G. Bourgeois, R. Stevens, R. Hamelin, M. Hammar, J. Berggren, P. Sundgren

Proceedings Volume 6132, 613207 (2006) https://doi.org/10.1117/12.646140

KEYWORDS: Vertical cavity surface emitting lasers, Oxides, Indium gallium arsenide, Quantum wells, Continuous wave operation, Semiconducting wafers, Waveguides, Gallium arsenide, Pulsed laser operation, Temperature metrology

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Showing 5 of 12 publications

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