Dr. Satoshi Enomoto Profile

Dr. Satoshi Enomoto

at Toyo Gosei Co Ltd

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Author

Publications (11)

Proceedings Article | 9 April 2024 Presentation + Paper

Feasibility study of a positive tone organometal chemically amplified resist for high-resolution EUV single patterning

Satoshi Enomoto, Kohei Machida, Shunya Honda, Takahiro Kozawa

Proceedings Volume 12957, 1295704 (2024) https://doi.org/10.1117/12.3010724

KEYWORDS: Extreme ultraviolet lithography, Extreme ultraviolet, Optical lithography, Photoacid generators, Chemically amplified resists, Metals, Ultraviolet radiation, Etching, Power consumption, Photoresist processing

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EUV lithography has been realize to use the mass production for 5nm logic device manufacture and beyond and semiconductor manufacturing plants that introduce EUV exposure system are being built or planned around the world. Therefore, the greatest interest of the EUV lithography is sub 10nm resolution patterning capability using high NA optics system. However, EUV chemically amplified resists (CARs) have had big problems about pattern defects due to stochastic effects from photon shot noise and acid diffusion blur less than 13nm HP. There is a trade-off relationship between resolution, line width roughness (LWR), and sensitivity (RLS trade-off). The RLS trade-off problems have come to a head with the progress of pattern miniaturization. The improvement of LWR and sensitivity without degrading the resolution is technically difficult because of acid diffusion and stochastic effect. Moreover, etching durability of CARs are also gradually surfaced as an issue due to reducing film thickness to prevent pattern collapse. The development of a novel platform for high resolution patterning becomes important. Currently, some of the new resist platform have been investigated and metal oxide resist and dry film resist were particularly achieved good patterning performance and etching durability as negative type resist by using metal component in the systems. On the contrary, performances of metal containing positive type resist by treating metal infiltration have not been sufficient to compare with the negative type resists. Sensitivity of non-CAR resists have a limitation by lack of the reaction probability because of only one reaction per photon at maximum. Therefore, including high concentration of EUV absorbing metal component, using chemically amplified reaction or other sensitivity enhancement techniques are necessary to meet the sensitivity requirement for high NA EUV resist. Previously, we proposed a positive tone organometal chemically amplified resist by making dissolution contrast though chain scission and polarity change to develop for butyl acetate. However, sensitivity and resolution were not sufficient as a photoresist for high NA EUV lithography. Although performance can be improved by modification of some structures, at first, we explored a way to significantly improve sensitivity by using PS-CAR process and new acid generator which can change the structure to UV sensitive one by EUV exposure only exposed area because of an aiming to reduce massive power consumption of EUV lithography.

Proceedings Article | 1 May 2023 Poster + Paper

Reaction mechanisms and EB patterning evaluation of Sn-complex-side-chain polymer used for EUV lithography

Yui Takata, Yusa Muroya, Takahiro Kozawa, Satoshi Enomoto, Bilal Naqvi, Danilo De Simone

Proceedings Volume 12498, 1249826 (2023) https://doi.org/10.1117/12.2670173

KEYWORDS: Polymers, Extreme ultraviolet lithography, Extreme ultraviolet, Electron beam lithography, Design and modelling, Tin, Scanning electron microscopy, Internet of things, Electron beams

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Proceedings Article | 1 May 2023 Poster + Paper

Design concept of a positive tone organometal chemically amplified resist to enhance the sensitivity and etching durability for high resolution EUV single patterning

Satoshi Enomoto, Kohei Machida, Michiya Naito, Takahiro Kozawa

Proceedings Volume 12498, 124981O (2023) https://doi.org/10.1117/12.2658130

KEYWORDS: Polymers, Chemically amplified resists, Extreme ultraviolet, Etching, Metals, Optical lithography, Solubility, Line width roughness, Electron beam lithography, Extreme ultraviolet lithography

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EUV chemically amplified resists (CARs) have had big problems about pattern defects due to stochastic effects from photon shot noise and acid diffusion blur less than 13 nm HP. There is a trade-off relationship between resolution, line width roughness (LWR), and sensitivity (RLS trade-off). Moreover, etching durability of CARs have also been gradually surfaced as an issue due to reducing film thickness to prevent pattern collapse. In the circumstances, some of the new resist platform have been investigated. Above all, metal oxide resist and dry resist were particularly achieved good patterning performance and etching durability as negative type resist by using metal component in the systems. However, EUV lithography mainly need positive tone resist for logic device patterning. From these viewpoints, we aimed to make an organometal positive tone EUV chemically amplified resist concept based on our negative type metal resist. Previously, we proposed a novel chemically amplified resist platform that consists of polarity changer, organotin compound and others. Polymers having triarylsulfonium cations, organotin compound and diarylmethanol as side chains were designed to realize a negative imaging property. Upon exposure to EUV or electron beam (EB), the ionic component is transferred to nonionic component through the decomposition of polymer-bounded onium cation (PBC). The polymer molecules are also crosslinked through the acid catalytic etherification. We demonstrated a high sensitivity and low LER property by using acetonitrile aqueous solution developer. This resist obtains a dissolution contrast to polar solvent by changing to hydrophobic structure though the decomposition of the onium cation and crosslinking. Presumably, this resist can convert from negative to positive tone by changing the part of reaction for making dissolution contrast from cross-link to chain scission and developer from polar solvent to nonpolar solvent for exposed material dissolution. After some modification of the resist material, we demonstrate positive tone imaging by using alkyl acetate as a developer.

Proceedings Article | 1 December 2022 Presentation + Paper

Study of RLS trade-off mitigation utilizing an organotin-containing chemically amplified resist for high sensitivity patterning

Satoshi Enomoto, Kohei Machida, Michiya Naito, Takahiro Kozawa

Proceedings Volume 12292, 122920D (2022) https://doi.org/10.1117/12.2641179

KEYWORDS: Polymers, Ultraviolet radiation, Optical lithography, Line edge roughness, Chemically amplified resists, Extreme ultraviolet lithography, Scanning electron microscopy, Extreme ultraviolet, Silver, Line width roughness

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Proceedings Article | 26 September 2019 Paper

Study of RLS trade-off mitigation utilizing a novel negative chemically amplified resist for high resolution patterning

Satoshi Enomoto, Kohei Machida, Michiya Naito, Takahiro Kozawa

Proceedings Volume 11147, 111471K (2019) https://doi.org/10.1117/12.2536909

KEYWORDS: Chemically amplified resists, Polymers, Optical lithography, Extreme ultraviolet lithography, Line width roughness, Extreme ultraviolet, Stochastic processes, Diffusion, Electron beam lithography, Light sources

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Proceedings Article | 25 March 2019 Paper

Improvement of dual insolubilization resist performance through the incorporation of various functional units

Satoshi Enomoto, Takumi Yoshino, Kohei Machida, Takahiro Kozawa

Proceedings Volume 10960, 109600D (2019) https://doi.org/10.1117/12.2515149

KEYWORDS: Polymers, Extreme ultraviolet lithography, Absorption, Extreme ultraviolet, Semiconducting wafers, Diffusion, Line width roughness, Chemically amplified resists, Stochastic processes, Head-mounted displays

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Proceedings Article | 13 March 2018 Paper

Study of electron beam and extreme ultraviolet resist utilizing polarity change and radical crosslinking

Satoshi Enomoto, Takumi Yoshino, Kohei Machida, Takahiro Kozawa

Proceedings Volume 10586, 105860H (2018) https://doi.org/10.1117/12.2297392

KEYWORDS: Polymers, Extreme ultraviolet lithography, Extreme ultraviolet, Electron beams, Chemically amplified resists, Lithography, Absorption, Diffusion, Line width roughness, Molecules

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Proceedings Article | 24 April 2014 Paper

High-resist sensitization by pattern and flood combination lithography

Seiichi Tagawa, Akihiro Oshima, Satoshi Enomoto, C. Q. Dinh

Proceedings Volume 9048, 90481S (2014) https://doi.org/10.1117/12.2046790

KEYWORDS: Lithography, Floods, Extreme ultraviolet, Ultraviolet radiation, Extreme ultraviolet lithography, Picosecond phenomena, Light sources, Chemically amplified resists, Contamination, Ions

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Proceedings Article | 1 April 2013 Paper

Relation between sensitivity and resolution in polymer bound PAGs and polymer blend PAGs

Satoshi Enomoto, Tuan Nguyen Dang, Cong Que Dinh, Seiichi Tagawa

Proceedings Volume 8679, 867926 (2013) https://doi.org/10.1117/12.2011650

KEYWORDS: Polymers, Diffusion, Extreme ultraviolet, Lithography, Line width roughness, Extreme ultraviolet lithography, Optical lithography, Semiconducting wafers, Line edge roughness, Nanotechnology

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Proceedings Article | 1 April 2013 Paper

Reaction mechanisms of various chemically amplified EUV and EB resist

Satoshi Enomoto, Akihiro Oshima, Seiichi Tagawa

Proceedings Volume 8679, 86792C (2013) https://doi.org/10.1117/12.2011634

KEYWORDS: Extreme ultraviolet, Polymers, Extreme ultraviolet lithography, Lithography, Ionization, Manganese, Absorption, Neodymium, Surface conduction electron emitter displays, Electron beams

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Proceedings Article | 1 April 2013 Paper

Prediction of resist sensitivity for 13.5-nm EUV and 6.x-nm EUV extension from sensitivity for EBL

Tomoko Oyama, Akihiro Oshima, Tuan Dang, Satoshi Enomoto, Masakazu Washio, Seiichi Tagawa

Proceedings Volume 8679, 86792A (2013) https://doi.org/10.1117/12.2011442

KEYWORDS: X-rays, Electron beam lithography, Extreme ultraviolet lithography, Extreme ultraviolet, Polymethylmethacrylate, Chemical reactions, Chemistry, Synchrotron radiation, Silicon, Semiconductors

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Showing 5 of 11 publications

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