Stochastics defect detection has been a topic of intense study by the extreme ultraviolet (EUV) patterning fraternity [1]. A large part of this initial feasibility work has been performed using electron microscope-based systems [1,2]. A limited sample area is imaged using electron microscopes and images are analyzed using offline analysis techniques [1,2]. However, to accurately quantify the stochastics failure rate, the entire area of interest needs to be inspected. Given such large area inspection requirements, automated and high throughput solutions are the need of the hour to enable stochastics quantification in HVM (high volume manufacturing). This paper demonstrates Broadband Plasma optical wafer inspection capability to capture two key defects on EUV layers a) missing contact in contact hole array patterns b) line breaks in line- space pattern.
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