Maciej Węgrzecki, Tadeusz Piotrowski, Zbigniew Puzewicz, Jan Bar, Ryszard Czarnota, Rafal Dobrowolski, Andrii Klimov, Jan Kulawik, Helena Kłos, Michał Marchewka, Marek Nieprzecki, Andrzej Panas, Bartłomiej Seredyński, Andrzej Sierakowski, Wojciech Słysz, Beata Synkiewicz, Dariusz Szmigiel, Michał Zaborowski
In this paper a concept of a new bulk structure of p+-υ-n+ silicon photodiodes optimized for the detection of fast-changing radiation at the 1064 nm wavelength is presented. The design and technology for two types of quadrant photodiodes, the 8-segment photodiode and the 32-element linear photodiode array that were developed according to the concept are described.
Electric and photoelectric parameters of the photodiodes mentioned above are presented.
In this paper, the design and technology of two types of 16-element photodiode arrays is described. The arrays were developed by the ITE and are to be used in detection of microdeflection of laser radiation at the Institute of Metrology and Biomedical Engineering in the Faculty of Mechatronics of Warsaw University of Technology.
The electrical and photoelectrical parameters of the arrays are presented.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.