Mr. Tatsuro Nagahara Profile

Tatsuro Nagahara

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Publications (11)

Proceedings Article | 25 March 2019 Presentation

Aqueous materials for advanced lithography (Conference Presentation)

Yi Cao, Tatsuro Nagahara, Taku Hirayama

Proceedings Volume 10960, 1096014 (2019) https://doi.org/10.1117/12.2516031

KEYWORDS: Photoresist materials, Lithography, Optical lithography, Photoresist developing, Extreme ultraviolet lithography, Extreme ultraviolet, Manufacturing, Chemical reactions, Capillaries, Immersion lithography

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EMD Performance Materials provides a broad material portfolio for photolithography, Chemical Shrink and EUV Rinse materials are two categories of aqueous materials enabling advanced patterning. Chemical Shrink materials generate an additional layer on the surface of photoresist pattern through chemical/physical interactions, resulting in finer trench or hole structures. The technique helps IC manufacturers improve process margin and reduce cost of ownership by relaxing the requirements for lithography. EMD has been engaged in development of the technology for over two decades, and introduced materials for multiple generations of lithography. The first generation Chemical Shrink material, AZ® R200 was commercialized for i-line and KrF applications around 2000. From then on, several commercial platforms were released targeting for ArF, ArF-immersion, and ArF NTD (Negative Tone Development) photoresists. Shrink amount depends on the material platforms and photoresists, it can be controlled from several nm to 100 nm with the process conditions, mainly shrink bake temperature. Well-controlled through-pitch proximity is one of the key advantages of the technique as well. Chemical shrink process is a straightforward and well-established in-track process. Not only smaller pattern sizes are achieved, effective DOF (Depth of Focus) is improved, but also surface smoothing of photoresist is expected. Rinse materials are a unique offering from EMD to alleviate capillary force hence mitigate pattern collapse in very fine photoresist pattern through reducing surface tension with novel surfactants. Based on the knowledge and know-hows learned during the development of rinse materials for ArF and ArF immersion lithography processes in the past decades, new material platforms have been developed to extend the technique to meet the ever more critical requirements in EUV lithography. AZ® Extreme 10 was commercialized as the world first rinse material dedicated for EUV lithography, designed for L/S (Line and Space) pattern of 22nm hp patterning. To further improve the compatibility with the latest EUV photoresists for finer pattern, 18nm hp and beyond, AZ® SPC-708 is newly commercialized in 2018. It is expected that AZ® SPC-708 helps reduce photoresist residues during development process in addition to its function of collapse mitigation. EMD Performance Materials is committed to providing novel solutions to confront the increasing technical challenges in advanced patterning.

Proceedings Article | 5 May 2017 Paper

Recent development status of rinse material for EUV lithography

Kazuma Yamamoto, Maki Ishii, Tomoyasu Yashima, Tatsuro Nagahara

Proceedings Volume 10143, 101431X (2017) https://doi.org/10.1117/12.2257393

KEYWORDS: Extreme ultraviolet lithography, Electron beam lithography, Photoresist processing, Lithography, High volume manufacturing, Line width roughness, Capillaries, Extreme ultraviolet, Manufacturing, Photoresist materials

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Proceedings Article | 1 April 2016 Paper

Resist roughness improvement by a chemical shrink process

Tatsuro Nagahara, Takashi Sekito, Yuriko Matsuura

Proceedings Volume 9777, 97771J (2016) https://doi.org/10.1117/12.2218402

KEYWORDS: Polymers, Photoresist processing, Lithography, Chemical reactions, Line width roughness, Scanning probe microscopy, Surface roughness, Image processing, Inspection, 3D image processing

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Proceedings Article | 20 March 2015 Paper

Advanced shrink material for NTD process with lower Y/X shrinkage bias of elongated patterns

Yoshihiro Miyamoto, Takashi Sekito, John Sagan, Yuko Horiba, Takafumi Kinuta, Tatsuro Nagahara, Shinji Tarutani

Proceedings Volume 9425, 942520 (2015) https://doi.org/10.1117/12.2085736

KEYWORDS: Diffusion, Lithography, Polymers, Materials processing, Semiconducting wafers, Resolution enhancement technologies, Manufacturing, Cadmium sulfide, Scanning electron microscopy, Integrated circuits

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Proceedings Article | 13 March 2015 Paper

New approach to improve LER of EUV resist pattern by chemical and thermal treatment

Tatsuro Nagahara, Kazuma Yamamoto, Yuriko Matsuura, Takashi Sekito

Proceedings Volume 9422, 94222F (2015) https://doi.org/10.1117/12.2085713

KEYWORDS: Line edge roughness, Extreme ultraviolet, Polymers, Photoresist processing, Lithography, Extreme ultraviolet lithography, Image processing, Thin film coatings, Edge roughness, Chemistry

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Proceedings Article | 27 March 2014 Paper

Chemical shrink materials and process for negative tone development (NTD) resist

Yoshihiro Miyamoto, John Sagan, Munirathna Padmanaban, Georg Pawlowski, Tatsuro Nagahara

Proceedings Volume 9051, 905123 (2014) https://doi.org/10.1117/12.2046311

KEYWORDS: Floods, Photoresist processing, Photoresist materials, Thermal effects, Lithography, Materials processing, Image processing, Semiconducting wafers, Resolution enhancement technologies, Critical dimension metrology

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Proceedings Article | 26 March 2013 Paper

Process enhancements for negative tone development (NTD)

Go Noya, Kazuma Yamamoto, Naoki Matsumoto, Yukie Takemura, Maki Ishii, Yoshihiro Miyamoto, Masahiro Ishii, Tatsuro Nagahara, Georg Pawlowski

Proceedings Volume 8680, 86802E (2013) https://doi.org/10.1117/12.2012077

KEYWORDS: Semiconducting wafers, Image processing, Lithography, Photoresist processing, 193nm lithography, Resolution enhancement technologies, Yield improvement, Optical lithography, Materials processing, Deep ultraviolet

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Proceedings Article | 21 March 2012 Paper

A phase segregating polymer blend for 2xnm feature applications

Jin Li, Tatsuro Nagahara, Munirathna Padmanaban, John Sagan

Proceedings Volume 8323, 83231R (2012) https://doi.org/10.1117/12.916031

KEYWORDS: Picosecond phenomena, Polymers, Etching, Oxygen, Plasma, Silicon, Scanning electron microscopy, Lithography, Interfaces, Directed self assembly

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Proceedings Article | 20 March 2012 Paper

Combinatorial process optimization for negative photo-imageable spin-on dielectrics and investigation of post-apply bake and post-exposure bake interactions

Jihoon Kim, Ruzhi Zhang, Elizabeth Wolfer, Bharatkumar Patel, Medhat Toukhy, Zachary Bogusz, Tatsuro Nagahara

Proceedings Volume 8325, 83252A (2012) https://doi.org/10.1117/12.916453

KEYWORDS: Dielectrics, Lithography, Semiconducting wafers, Critical dimension metrology, Polymers, Photoresist materials, Image processing, Coating, Semiconductor manufacturing, Photoresist developing

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Proceedings Article | 16 April 2011 Paper

Negative photo-imageable spin-on dielectrics: report on progress, challenges, and opportunities

Ruzhi Zhang, Chien-Hsien Lee, Elizabeth Wolfer, Tatsuro Nagahara, Mark Neisser, Ralph Dammel

Proceedings Volume 7972, 79722K (2011) https://doi.org/10.1117/12.871114

KEYWORDS: Dielectrics, Lithography, Annealing, Semiconducting wafers, Manufacturing, Polymers, Fourier transforms, Semiconductors, Coating, Head-mounted displays

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Proceedings Article | 1 April 2009 Paper

Image reversal trilayer process using standard positive photoresist

David Abdallah, John Sagan, Kazunori Kurosawa, Jin Li, Yusuke Takano, Yasuo Shimizu, Ninad Shinde, Tatsuro Nagahara, Tomonori Ishikawa, Ralph Dammel

Proceedings Volume 7273, 72732K (2009) https://doi.org/10.1117/12.815149

KEYWORDS: Etching, Image processing, Photoresist materials, Silicon, Photomasks, Oxygen, Semiconducting wafers, Lithography, Carbon, Optical lithography

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Showing 5 of 11 publications

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