This paper describes a study of perimeter recombination on millimeter-scale multijunction photovoltaic cells using luminescence characterizations and a quasi-3D PV modeling. Device performance of controlled GaAs 1J cells shows an obvious perimeter dependency. By contrast, the performance of controlled InGaP 1J cells is less dependent on perimeters. Corresponding InGaP/GaAs 2J cells are assessed whose results exhibit combined contributions from both subcells. Luminescence method using current transport efficiency mapping and the PV modeling are able to reveal the influence of perimeter recombination and series resistance effect for individual subcells.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.