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Laser damage resistance analysis of liquid crystal devices based on ITO or GaN transparent electrode
In the SGII-Up laser facility, this device demonstrates its ability to shape the output laser beam of the fundamental frequency when the output energy reaches about 2000J. Meanwhile, there’s no change in the time waveform and far field distribution. This means that it can effectively improve the capacity of the maximum output energy.
In the 1J1Hz Nd-glass laser system, this device has been used to improve the uniformity of the output beam. As a result, the PV value reduces from 1.4 to 1.2, which means the beam quality has been improved effectively.
In the 9th beam of SGII laser facility, the device has been used to meet the requirements of sampling the probe light. As the transmittance distribution of the laser beam can be adjusted, the sampling spot can be realized in real time. As a result, it’s easy to make the sampled spot meet the requirements of physics experiment.
In a word, we need pay attention to some aspects contents with emphasis for future huger laser facility development. The first is to focus the new technology application. The second is to solve the matching problem between 1ω beam and the 3ω beam. The last is to build the whole effective design in order to improve efficiency and cost performance.
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