Mr. Yasri Yudhistira Profile

Yasri Yudhistira

at GLOBALFOUNDRIES Singapore

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Author

Publications (3)

Proceedings Article | 4 April 2007 Paper

Automatic setup of in-line critical dimension (CD) recipes during OPC qualification in a foundry environment

Yasri Yudhistira, Quek Shyue Fong, Chan Sun Sun, Koh Hui Peng, Rachel Ren, Sern Loong Ng, Amit Siany, Shimon Levi

Proceedings Volume 6518, 651809 (2007) https://doi.org/10.1117/12.712534

KEYWORDS: Optical proximity correction, Computer aided design, Semiconducting wafers, Scanning electron microscopy, Pattern recognition, Optical alignment, Wafer-level optics, Data modeling, Etching, Target recognition

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Proceedings Article | 26 March 2007 Paper

Silicon verification of flare model & application to real chip for long range proximity correction

Dongqing Zhang, Byoung Il Choi, Foong Yee Mei, Suleni Mulia, Jung Yu Hsieh, James Word, Yasri Yudhistira

Proceedings Volume 6520, 65202U (2007) https://doi.org/10.1117/12.714352

KEYWORDS: Critical dimension metrology, Optical proximity correction, Silicon, Lithography, Data modeling, Reticles, Semiconducting wafers, Control systems, Light scattering, Process control

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Proceedings Article | 15 March 2006 Paper

Lithography process optimization using linear superposition of commonly available illumination modes

Michael Crouse, Yasri Yudhistira, Min Ho Lee, Hope Matis

Proceedings Volume 6154, 61541Q (2006) https://doi.org/10.1117/12.657198

KEYWORDS: Lithographic illumination, Composites, Lithography, Superposition, Photomasks, Fiber optic illuminators, Image processing, Diffractive optical elements, Optical components, Printing

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The objective of this work is to demonstrate a simple Linear Superposition approach to creating an optimized illumination scheme from commonly available apertures (e.g. conventional, annular, quadrupole, dipole, etc.) that meet a variety of lithographic process metrics. Previous authors have demonstrated a variety of approaches to optimize the illumination for a given lithographic process. One common example is to use an optimized illumination for a specific pitch range and breaking the exposure into multiple reticles designed to print only nested or isolated features. A second example that has been widely demonstrated is to develop a single custom illuminator, which requires long lead times for delivery and a large capital investment. The true on-wafer performance of this custom illuminator can only be determined post-installation, providing limited ability to verify the simulation work a priori. The linear superposition method described here produces an optimal illumination scheme for a given photolithographic process. The success of this approach is due to the acceptably small nature of the electric field interaction terms between individual illumination modes allowing a multiple-exposure system to model a composite source. Images from optimized sub-components can be added to generate a composite image that is superior overall to any one process alone. After each exposure in a multiple exposure system there is a latent image that is only developable after a specific energy or dose level has been surpassed. It is the additive process of these latent images that creates the composite image. The composite image has the additive properties of the sub-components according to their dose fractions. Once the optimal process and dose split have been determined, it is straightforward to create a composite aperture to produce the same process by a single exposure. The composite aperture is the addition of the multiple sub-components with the relative transmission of each related to the illuminated surface area for systems designed to deliver uniform brightness. This approach produces superior pattern fidelity and an optimized common lithography process without the pitfalls of any one of the sub-component illumination modes.

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