In this study, rA is investigated by different growth temperature between from 1200℃ to 1650℃ during AlN growth by high temperature metalorganic vapor phase epitaxy (MOVPE). The value of dislocation density calculated by X-ray rocking curve (XRC) fullwidth at half-maximum (FWHM) is decreasing with increasing AlN layer thickness. Moreover, it is found that there is threshold value in rA at the temperature of 1400℃. As a result, rA value is observed 20.2 nm in AlN with growth temperature of 1650℃, this represents close to rA value (27.5 nm) in GaN.
Highly reflective reflector (> 99.9%) operating at deep ultraviolet (DUV) wavelength region around 244 nm was
proposed by using subwavelength grating (SWG) patterned AlN substrate. Structural parameters of AlN-SWG were
desgined for DUV reflector using the wavenumber dispersion relation of the eiegenmdoes resulting from its periodic
refractive index distribution. The electromagnetic field calculated by finite-difference time-domain (FDTD) method
revealed the polarization selective reflection characteristics of the designed AlN-SWG, and the SWG can achieve more
than 99% reflectivity of p-polarization (the electric field is perpendicular to the grating fingers) at the DUV wavelength of
244 nm. This extremely high reflectivity, polarization selectivity and compactness of our AlN-SWG are very useful for
various DUV applications, such as cavity of DUV laser diodes.
Magnetic field detection was experimentally demonstrated utilizing the optical spectral change of Al-subwavelength grating (SWG) on indium-tin-oxide (ITO) layer. The Al-SWG was fabricated on the ITO layer by electron-beam lithography technique. The fabricated sample shows the peak in the reflection spectrum resulting from the excitation of guided-mode in ITO layer. Electron accumulation layer in ITO was induced by applying magnetic field and flowing current, and the accumulation layer decreased the reflection peak intensity. As the magnetic field of 172 mT was applied, the intensity decreasing reached to 3 % of that without magnetic field. The intensity returned to the original value before measurement when the magnetic field and the current disappeared. These results indicate that our structure can detect tens of mT magnetic field without degaussing.
A sensitive optical magnetic field sensor was experimentally demonstrated using Ni-subwavelength grating (SWG) combined with a SiO2/Ag plasmonic structure. We fabricated the Ni-SWG structure on the Ag/SiO2 structure using electron beam lithography and a liftoff process. As a result, a dip in the reflection spectra with normal incidence was obtained at a wavelength of 530 nm. The reflectivity at the dip position significantly decreased with the intensity of the magnetic field applied to the structure. When a magnetic field of 43 mT was applied, the change in reflection reached approximately 4% of that without magnetic field. The experimental results indicate that our sensor achieves millitesla order of sensitivity for the magnetic field. The electromagnetic field distribution around the Ni-SWG/SiO2/Ag calculated using the finite-difference time-domain method clarified the reason for the high sensitivity of our sensor.
Highly sensitive optical sensor for magnetic field detection was experimentally demonstrated using a guided-mode resonance in waveguide with Ni nano-grating. The electromagnetic field distribution was calculated by finite-difference time-domain method in order to estimate the sensing performance of our device. The calculation results indicated that the optical characteristics of our sensor considerably varied with applying magnetic field. We fabricated the Ni-subwavelength grating/ Si3N4 waveguide structure on the optical glass substrate using electron beam lithography technique. The reflection peak resulting from the guided-mode in the waveguide was obtained with normal incident geometry. The peak intensity depended on static magnetic field applied to the structure, and the intensity changed by about 5 % for the magnetic field intensity of 39.4 mT. These experimental results suggest our sensor can sensitively detect magnetic field while avoiding use of the complex and expensive system, and our device is pretty suitable for the integration devices in internet of things society.
We analytically investigated the influence of grating shape on polarization characteristics of the emission from a GaN-based light-emitting diode with a low-contrast subwavelength grating (SWG), such as SiO2-SWG. The electromagnetic field distribution, calculated using the finite-difference time-domain method, predicted that the polarization characteristics strongly depend on the grating side slope. A trapezoid SiO2-SWG was fabricated on the GaN-based-LED using electron-beam lithography. The optical characteristics of the electroluminescence agreed with those theoretically predicted, and we succeeded in demonstrating the influence of grating shape on the polarization of LED emission.
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