Paper
14 June 1988 Hybrid Device Process Using A Focused Ion Beam And An Optical Stepper
Yukinori Ochiai, Yoshikatsu Kojima, Shinji Matsui, Akira Mochizuki, Masamitsu Yamauchi
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Abstract
The focused ion beam (FIB) process has been examined for device production with an optical stepper. The FIB system developed performs and alignment procedure with a precise controlled stage. The registration accuracy attained by FIB lithography using Be and Si ions with the same or different ion energies showed good values with alignment marks covered with resists. The hybrid process with fine pattern delineation depending on FIB and with high throughput depending on an optical stepper indicated a promising tool for submicron devices.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yukinori Ochiai, Yoshikatsu Kojima, Shinji Matsui, Akira Mochizuki, and Masamitsu Yamauchi "Hybrid Device Process Using A Focused Ion Beam And An Optical Stepper", Proc. SPIE 0923, Electron-Beam, X-Ray, and Ion Beam Technology: Submicrometer Lithographies VII, (14 June 1988); https://doi.org/10.1117/12.945639
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Cited by 4 scholarly publications.
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KEYWORDS
Ions

Signal detection

Semiconducting wafers

Silicon

Ion implantation

Ion beams

Polymethylmethacrylate

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