Wave front phase imaging for silicon wafer metrology

Juan M. Trujillo-Sevilla; Alex Roqué-Velasco; Miguel Jesús Sicilia; Óscar Casanova-González; José Manuel Rodríguez-Ramos; Jan O. Gaudestad

doi:10.1117/12.2632499

3 October 2022 Wave front phase imaging for silicon wafer metrology

Juan M. Trujillo-Sevilla, Alex Roqué-Velasco, Miguel Jesús Sicilia, Óscar Casanova-González, José Manuel Rodríguez-Ramos, Jan O. Gaudestad

Author Affiliations +

Proceedings Volume 12216, Novel Optical Systems, Methods, and Applications XXV; 1221605 (2022) https://doi.org/10.1117/12.2632499
Event: SPIE Optical Engineering + Applications, 2022, San Diego, California, United States

Abstract

Wave Front Phase Imaging (WFPI) is a new wafer shape measurement technique that acquires millions of data points in just seconds or less, on a full 300mm silicon wafer. This provides lateral resolution well below 100μm with the possibility of reaching the lens’ optical resolution limitation between 3-4μm. The system has high repeatability with root-mean-square (RMS) standard deviation (σRMS) in the single digit nm for the global wafer shape geometry and for nanotopography it reaches in the sub ångström (Å = 10-10 m) range. WFPI can collect data on the entire wafer to within a single pixel away from the wafer edge roll off1. The flatness of the silicon wafers used to manufacture integrated circuits (IC) is controlled to tight tolerances to help ensure that the full wafer is sufficiently flat for lithographic processing. Advanced lithographic patterning processes require a detailed map of the wafer shape to avoid overlay errors caused by depth-of-focus issues2. In this paper we go deep into the theoretical explanation as to how the wave front phase sensor works.

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Juan M. Trujillo-Sevilla, Alex Roqué-Velasco, Miguel Jesús Sicilia, Óscar Casanova-González, José Manuel Rodríguez-Ramos, and Jan O. Gaudestad "Wave front phase imaging for silicon wafer metrology", Proc. SPIE 12216, Novel Optical Systems, Methods, and Applications XXV, 1221605 (3 October 2022); https://doi.org/10.1117/12.2632499

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