EUV single patterning of random logic via using bright field mask

Ling Ee Tan; Werner Gillijns; Jae Uk Lee; Dongbo Xu; Jeroen van de Kerkhove; Vicky Philipsen; Ryoung-han Kim

doi:10.1117/12.2658344

28 April 2023 EUV single patterning of random logic via using bright field mask

Ling Ee Tan, Werner Gillijns, Jae Uk Lee, Dongbo Xu, Jeroen van de Kerkhove, Vicky Philipsen, Ryoung-han Kim

Proceedings Volume 12494, Optical and EUV Nanolithography XXXVI; 124940X (2023) https://doi.org/10.1117/12.2658344
Event: SPIE Advanced Lithography + Patterning, 2023, San Jose, California, United States

Abstract

Imec logic N2+ design rule defines a minimum via pitch of 36nm. An EUV single patterning solution at 0.33 NA is explored on a random logic via design. From an earlier simulation study , it was shown that Ta-based bright field mask delivers the best resolution enhancement technology (RET) solution. In this paper the simulation results will be validated on wafer. Negative-tone development (NTD) with a metal-oxide resist process using a bright field (BF) mask and positivetone development (PTD) with a chemically amplified resist process using a dark field (DF) mask are compared. In addition, source-mask optimizations (SMO) including sub-resolution assist features (SRAF) were used as a RET, and optical proximity correction (OPC) was carried out on the design clips to achieve optimum lithography performance. We report the best choice among the listed options, and present our recommendation on OPC, RET and process based on the simulation and wafer data in order to improve the resolution, therefore extending the single exposure pitch limit.

Citation Download Citation

Ling Ee Tan, Werner Gillijns, Jae Uk Lee, Dongbo Xu, Jeroen van de Kerkhove, Vicky Philipsen, and Ryoung-han Kim "EUV single patterning of random logic via using bright field mask", Proc. SPIE 12494, Optical and EUV Nanolithography XXXVI, 124940X (28 April 2023); https://doi.org/10.1117/12.2658344

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KEYWORDS

SRAF

Logic

Semiconducting wafers

Design and modelling

Critical dimension metrology

Optical proximity correction

Printing

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