Numerical study of electromagnetic properties of the 3D through silicon via with high aspect ratio

Song-En Chen; Chih-Chung Wang; Hung-Wei Hsu; Yen-Ting Wu; Jia-Han Li

doi:10.1117/12.2657818

27 April 2023 Numerical study of electromagnetic properties of the 3D through silicon via with high aspect ratio

Song-En Chen, Chih-Chung Wang, Hung-Wei Hsu, Yen-Ting Wu, Jia-Han Li

Proceedings Volume 12496, Metrology, Inspection, and Process Control XXXVII; 124962J (2023) https://doi.org/10.1117/12.2657818
Event: SPIE Advanced Lithography + Patterning, 2023, San Jose, California, United States

Conference Poster

Abstract

Understanding the electromagnetic properties of the 3D through silicon via (TSV) with high aspect ratio is important for the 3D IC stacking and packaging. The electromagnetic simulations were used to explore the TSV with different model parameters, such as top critical dimension, bottom critical dimension, hole depth, sidewall slope, sidewall roughness, curvature of the base, and light wavelength. A model is proposed to parameterize TSV structure features. The simulation results corresponding to these model parameters are discussed.

Citation Download Citation

Song-En Chen, Chih-Chung Wang, Hung-Wei Hsu, Yen-Ting Wu, and Jia-Han Li "Numerical study of electromagnetic properties of the 3D through silicon via with high aspect ratio", Proc. SPIE 12496, Metrology, Inspection, and Process Control XXXVII, 124962J (27 April 2023); https://doi.org/10.1117/12.2657818

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