Hysteresis effect of pH-ISFET based on Beckman phi 110 (Si3N4 gate pH-ISFET)

Jung Chuan Chou; Yu Neng Tseng

doi:10.1117/12.392124

11 July 2000 Hysteresis effect of pH-ISFET based on Beckman Φ 110 (Si₃N₄ gate pH-ISFET)

Jung Chuan Chou, Yu Neng Tseng

Proceedings Volume 4078, Optoelectronic Materials and Devices II; (2000) https://doi.org/10.1117/12.392124
Event: Photonics Taiwan, 2000, Taipei, Taiwan

Abstract

In this study, the commercial manufacture Beckman 110 (Si₃N₄ gate pH-ISFET) was acted as the sensitive membrane of pH-ISFET. The experimental results show that the Si₃N₄ material has a fairly high response, and the pH sensitivity was obtained at 56.94 mV/pH in a concentration rage between pH 1 and pH 11 at room temperature. In our experiment, we use Keithley 236 Semiconductor Parameter Analyzer to measure the drain current (I_DS) versus gate voltage (V_G) curve of Si₃N₄ ISFET over a pH range from 1 to 11 at room temperature. The constant voltage-current-circuit and time-voltage record were also used to measure the hysteresis curve of Beckman 110 (Si₃N₄ gate pH-ISFET). The same procedure was also applied to a-Si:H gate pH-ISFET, which fabricated in our laboratory. From the I_DS versus V_G and hysteresis curve, we can obtain that the pH sensitivity was 56.94 mV/pH at constant temperature (25 degree(s)C) and hysteresis widths of Beckman 110 (Si₃N₄ gate pH-ISFET) and a- Si:H gate pH-ISFET in the larger pH site are larger than in the smaller pH site, and the hysteresis width increased with the increasing loop time and measureing path.

Citation Download Citation

Jung Chuan Chou and Yu Neng Tseng "Hysteresis effect of pH-ISFET based on Beckman Φ 110 (Si₃N₄ gate pH-ISFET)", Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); https://doi.org/10.1117/12.392124

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