Paper
11 March 2008 The influence of the substrate temperature variation on FexAl1-x thin films deposition
Zhenliang Liu, Zhijun Liao, Shuichang Yang, Weidong Wu, Dengxue Wu, Tiecheng Lu, Lin Zhang, Yongjian Tang
Author Affiliations +
Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69842B (2008) https://doi.org/10.1117/12.792027
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China
Abstract
FexAl1-x thin films had been prepared on Si (100) substrates by electron beam evaporation. The substrate temperature was varied from room temperature to 450°C at an interval of 100°C. The crystalline orientation of deposited FexAl1-x thin films had been characterized by X-ray diffraction (XRD) and the thickness was measured by Atomic profiler. The results show that the crystalline orientation of FexAl1-x thin films depends on the substrate temperature. The thin films are crystal at different substrate temperatures. The deposition rate becomes bigger from 30°C to 250°C and smaller from 250°C to 450°C. The surface morphology of deposited FexAl1-x thin films had been investigated by atomic force microscopy (AFM). The results show that the surface roughness increases with increasing the substrates temperature to 450°C.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhenliang Liu, Zhijun Liao, Shuichang Yang, Weidong Wu, Dengxue Wu, Tiecheng Lu, Lin Zhang, and Yongjian Tang "The influence of the substrate temperature variation on FexAl1-x thin films deposition", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69842B (11 March 2008); https://doi.org/10.1117/12.792027
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KEYWORDS
Thin films

Atomic force microscopy

Physics

Thin film deposition

Adsorption

Aluminum

Electron beams

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