Implications of triple patterning for 14nm node design and patterning

Kevin Lucas; Chris Cork; Bei Yu; Gerard Luk-Pat; Ben Painter; David Z. Pan

doi:10.1117/12.920028

6 March 2012 Implications of triple patterning for 14nm node design and patterning

Kevin Lucas, Chris Cork, Bei Yu, Gerard Luk-Pat, Ben Painter, David Z. Pan

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Proceedings Volume 8327, Design for Manufacturability through Design-Process Integration VI; 832703 (2012) https://doi.org/10.1117/12.920028
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

The upcoming 14nm logic node will require lithographic patterning of complex layout patterns with minimum pitches of approximately 44nm to 50nm. This requirement is technically feasible by reusing existing 20nm litho-etch-litho-etch (LELE) double patterning (DPT) methods with very strong restricted design rules. However, early indications are that the cost-effective design and patterning of these layouts will require lithographic methods with additional resolution, especially in two-dimensional configurations. If EUV lithography reaches maturity too late, the 14nm logic node will need other lithographic techniques and the corresponding physical design rules and EDA methodologies to be available. Triple patterning technology (TPT) is a strong option for 14nm node logic on both hole and line-space pattern layers. In this paper we study major implications of a 14nm logic TPT lithographic solution upon physical design, design rules, mask synthesis/EDA algorithms and their process interactions.

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Kevin Lucas, Chris Cork, Bei Yu, Gerard Luk-Pat, Ben Painter, and David Z. Pan "Implications of triple patterning for 14nm node design and patterning", Proc. SPIE 8327, Design for Manufacturability through Design-Process Integration VI, 832703 (6 March 2012); https://doi.org/10.1117/12.920028

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KEYWORDS

Optical lithography

Photomasks

Logic

Lithography

Double patterning technology

Etching

Cadmium sulfide

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