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Multibeam mask writers(MBMW) have been rapidly occupying on the field of leading edge EUV mask patterning for last several years. Thanks to outstanding ability of MBMW characteristics, sophisticated mask patterns and higher local pattern fidelity with low sensitivity E-beam resist can be realized in EUV era. Now most mask makers want to make good use of MBMW as a standard of making high-end grade masks such as Memory, Logic chips and etc. For this reason, they require higher pattern accuracy, faster writing time, higher data handling efficiency and matured machine stability aiming for the innovative mask making environment. Moreover, Larger coverage is needed as well not only for Low/High-NA EUV masks but also for even ARF masks.
In this paper, we touch key items with regard to comprehensive requirements from the mass production's point of view, for the versatile machines, several works and challenges to overcome on MBMW will be discussed.
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