Dr. Damien Perret Profile

Dr. Damien Perret

Research and Development Engineer at Rohm and Haas Electronic Materials SAS

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Publications (6)

Proceedings Article | 15 May 2010 Paper

193nm resist deprotection study from outgassing measurements by TD-GCMS/FID

Sylviane Cetre, Patrick Paniez, Samir Derrough, Hervé Fontaine, James Thackeray, Raluca Tiron, Damien Perret

Proceedings Volume 7545, 75450G (2010) https://doi.org/10.1117/12.863150

KEYWORDS: Semiconducting wafers, Polymers, Diffusion, Ionization, Sensors, Molecules, Statistical analysis, Chromatography, Spectroscopy, Lithography

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Proceedings Article | 26 March 2010 Paper

Continuous evolution of lithographic films through process steps: an example with 193 chemically amplified resists

Raluca Tiron, James Thackeray, Damien Perret, Claire Sourd, Patrick Paniez, Samir Derrough

Proceedings Volume 7639, 763937 (2010) https://doi.org/10.1117/12.846087

KEYWORDS: Diffusion, Lithography, Temperature metrology, Chemically amplified resists, Photoresist processing, Glasses, Line edge roughness, Systems modeling, Thermal analysis, Complex systems

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Proceedings Article | 1 April 2009 Paper

Simulation of optical lithography in the presence of topography and spin-coated films

Mark Smith, Vladimir Ivin, John Biafore, Sergey Potashov, Nikolay Elistratov, Trey Graves, Damien Perret, Michael Reilly, Mikhail Silakov, Stewart Robertson

Proceedings Volume 7273, 727340 (2009) https://doi.org/10.1117/12.813557

KEYWORDS: Semiconducting wafers, Coating, Silicon, Photoresist materials, Lithography, Scanning electron microscopy, Etching, Optical lithography, Reflectivity, Natural surfaces

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Proceedings Article | 15 April 2008 Paper

Impact of HBr and Ar cure plasma treatments on 193nm photoresists

Xavier Mellhaoui, Damien Perret, Erwine Pargon, Arnaud Bazin, Bénédicte Mortini, Olivier Joubert

Proceedings Volume 6923, 692337 (2008) https://doi.org/10.1117/12.772573

KEYWORDS: Plasma treatment, Etching, Argon, Resistance, Photoresist materials, Plasma, Polymers, FT-IR spectroscopy, Photoresist processing, Ellipsometry

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Since they have been introduced to substitute poly(hydroxystyrene) based 248nm photoresists (PR), 193nm photoresists based on acrylate chemistry have raised issues regarding their dry etch resistance. These resists undergo severe degradations during typical dry etch processes involved in gate patterning, resulting in strong film loss, resist chemical modifications, critical surface roughening and also linewidth roughness (LWR). Other studies have shown that applying plasma treatments to 193nm photoresist patterns prior to the other plasma etching processes is a way to minimize PR degradation. Among these plasma treatments, the HBr plasma cure is known to reinforce the 193nm photoresist etch resistance and to reduce the resist LWR. In this study, we propose to go further in the understanding of cure plasma treatments impact on a 193nm model resist polymer (from Rohm & Haas Electronic Materials) using real time in-situ ellipsometry experiments correlated to several characterization techniques such as in-situ X-Ray Photoelectrons Spectroscopy (XPS), Fourier Transformed Infrared Spectroscopy (FTIR) and Dynamic Mechanical Analysis (DMA). The impact of Ar and HBr cure plasma treatments on 193nm PR is investigated and compared. Both treatments lead to surface and also bulk modifications of the resist films. XPS analyses show that the 10 first nanometers of the resist film are graphitized after only 20s plasma treatment, resulting in a higher carbon content and therefore indicating a better etch resistance following the Ohnishi parameter. Besides this superficial modification, FTIR show that the resist film can be completely modified after HBr cure plasma treatment with the removal of lactone and leaving groups present in the polymer. The same kinds of modifications are observed with Ar cure plasma treatment but only the first 80nm of the resist film are chemically modified. A significant decrease of the glass transition temperature is also observed with both treatments and is related to lactone and leaving group units that remain in the film Finally, we show that the resist etch resistance is indeed improved if the resist is previously cured. However, in the case of Ar plasma treatment, the etch resistance is only improved while etching the first 80nm chemically modified resist.

Proceedings Article | 22 March 2007 Paper

Etch resistance: comparison and development of etch rate models

Charles Szmanda, Peter Trefonas, Damien Perret, Kap-Soo Cheon, Cecily Andes, George Barclay, Mani Sobhian

Proceedings Volume 6519, 651912 (2007) https://doi.org/10.1117/12.712242

KEYWORDS: Etching, Polymers, Photoresist materials, Resistance, Chemical species, Lithography, Error analysis, Photoresist developing, Data modeling, Statistical modeling

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Proceedings Article | 29 March 2006 Paper

Evaluating resist degradation during reactive ion oxide etching using 193 nm model resist formulations

G. Hadziioannou, D. Chung, C. Brochon, C. Sourd, B. Mortini, G. Barclay, M. May, D. Perret

Proceedings Volume 6153, 61530P (2006) https://doi.org/10.1117/12.656397

KEYWORDS: Etching, Polymers, Oxides, Reactive ion etching, FT-IR spectroscopy, Plasma etching, Ions, Resistance, Chemical analysis, Plasma

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Showing 5 of 6 publications

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