Dr. Erwine Pargon Profile

Dr. Erwine Pargon

at Lab des Technologies de La Microélectronique

SPIE Involvement:

Conference Program Committee | Author

Publications (27)

Proceedings Article | 5 March 2022 Presentation + Paper

Presentation + Paper

A device library for the ultra-low loss Si3N4 platform

Q. Wilmart, S. Guerber, J. Faugier-Tovar, Camille Petit-Etienne, Laurene Youssef, Erwine Pargon, Frédéric Van Dijk, François Duport, Yasmine Ibrahimi, Karen Ribaud, André Myko, Carole Socquet-Clerc

Proceedings Volume 12006, 120060D (2022) https://doi.org/10.1117/12.2606853

KEYWORDS: Waveguides, Silicon, Semiconducting wafers, Wave propagation, Resonators, Fiber couplers, Multiplexers, Silicon photonics, Directional couplers

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Proceedings Article | 5 March 2021 Presentation + Paper

Presentation + Paper

Selective enhancement of nonlinear processes in linearly uncoupled silicon resonators

Federico Andrea Sabattoli, Linda Gianini, Houssein El Dirani, Laurène Youssef, Francesco Garrisi, Davide Grassani, Luca Zatti, Camille Petit-Etienne, Erwine Pargon, J. Sipe, Marco Liscidini, Corrado Sciancalepore, Daniele Bajoni, Matteo Galli

Proceedings Volume 11690, 116900U (2021) https://doi.org/10.1117/12.2585316

KEYWORDS: Four wave mixing, Resonators, Silicon, Photons, Nonlinear dynamics, Quantum computing, Nonlinear optics, Integrated optics, Continuous wave operation

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Proceedings Article | 23 March 2020 Presentation + Paper

Presentation + Paper

Cycling of implantation step and remote plasma process step for nitride spacer etching applications.

Nicolas Alexandre Loubet, Cécile Jenny, Erwine Pargon, Camille Petit-Etienne

Proceedings Volume 11329, 113290G (2020) https://doi.org/10.1117/12.2551888

KEYWORDS: Etching, Plasma, Silicon, Ions, Fluorine, Plasma enhanced chemical vapor deposition, Hydrogen, Low pressure chemical vapor deposition, Plasma etching, Transmission electron microscopy

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Proceedings Article | 4 March 2019 Presentation + Paper

Presentation + Paper

Technological advances on Si and Si3N4 low-loss waveguide platforms for nonlinear and quantum optics applications

Houssein El Dirani, Cyril Bellegarde, Xavier Letartre, Camille Petit-Etienne, Christelle Monat, Jean-Michel Hartmann, Erwine Pargon, Corrado Sciancalepore

Proceedings Volume 10933, 1093309 (2019) https://doi.org/10.1117/12.2508617

KEYWORDS: Silicon, Annealing, Waveguides, Frequency combs, Line edge roughness, Silicon photonics, Photonics, Nonlinear optics, Absorption, Hydrogen

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Proceedings Article | 22 February 2018 Presentation + Paper

Presentation + Paper

Optimization of H2 thermal annealing process for the fabrication of ultra-low loss sub-micron silicon-on-insulator rib waveguides

Cyril Bellegarde, Erwine Pargon, Corrado Sciancalepore, Camille Petit-Etienne, Jean-Michel Hartmann, Philippe Lyan, Olivier Lemonnier, Karen Ribaud

Proceedings Volume 10537, 1053706 (2018) https://doi.org/10.1117/12.2289564

KEYWORDS: Annealing, Waveguides, Silicon, Line edge roughness, Optical lithography, Atomic force microscopy, Scanning electron microscopy, Interfaces, Wave propagation, Photomasks

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Proceedings Article | 23 February 2017 Presentation + Paper

Presentation + Paper

Improvement of sidewall roughness of sub-micron silicon-on-insulator waveguides for low-loss on-chip links

Cyril Bellegarde, Erwine Pargon, Corrado Sciancalepore, Jean-Michel Hartmann, Camille Petit-Etienne, Vincent Hughes, Philippe Lyan

Proceedings Volume 10108, 1010816 (2017) https://doi.org/10.1117/12.2250344

KEYWORDS: Oxidation, Waveguides, Silicon, Optical lithography, Photonic integrated circuits, Scattering, Light scattering, Optical testing, Silica, Thermal oxidation, 3D modeling, Line edge roughness, Photomasks, Annealing, Plasma, Photoresist processing, Plasma treatment

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Proceedings Article | 23 March 2016 Paper

Paper

Plasma etching processes for the integration of InP based compounds on 200mm Si wafer for photonic applications

E. Pargon, M. Bizouerne, G. Gay, C. Petit-Etienne, P. Burtin, M. Brihoum, S. Barnola

Proceedings Volume 9782, 97820C (2016) https://doi.org/10.1117/12.2221903

KEYWORDS: Plasma etching, Semiconducting wafers, Photonic integrated circuits, Semiconductor lasers, Silicon photonics, Optoelectronics, Silica, Anisotropic etching, Neodymium, Ions, Oxygen

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Proceedings Article | 17 March 2015 Paper

Paper

Spectral analysis of the line-width and line-edge roughness transfer during self-aligned double patterning approach

E. Pargon, Emmanuel Dupuy, M. Fouchier, J. Pradelles, H. Grampeix, P. Pimenta-Barros, S. Barnola, M. Darnon, O. Joubert

Proceedings Volume 9428, 94280B (2015) https://doi.org/10.1117/12.2085812

KEYWORDS: Line edge roughness, Line width roughness, Plasma, Etching, Critical dimension metrology, Plasma etching, Silicon, Oxygen, Photoresist processing, Neodymium

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Proceedings Article | 28 March 2014 Paper

Paper

Effect of etch pattern transfer on local overlay (OVL) margin in 28nm gate integration.

Onintza Ros, Pascal Gouraud, Bertrand Le-Gratiet, Christian Gardin, Julien Ducoté, Erwine Pargon

Proceedings Volume 9054, 905406 (2014) https://doi.org/10.1117/12.2042080

KEYWORDS: Etching, Plasma, Optical lithography, Distortion, Semiconducting wafers, Overlay metrology, Line width roughness, Scanners, Neodymium, Lithography

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Proceedings Article | 28 March 2014 Paper

Paper

Line width roughness reduction strategies for patterns exposed via electron beam lithography

J. Jussot, E. Pargon, B. Icard, J. Bustos, L. Pain

Proceedings Volume 9054, 905405 (2014) https://doi.org/10.1117/12.2047972

KEYWORDS: Line width roughness, Electron beam lithography, Lithography, Plasma, Plasma treatment, Ultraviolet radiation, Gaussian beams, Photoresist materials, Semiconducting wafers, Electron beams

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Proceedings Article | 28 March 2014 Paper

Paper

Directed self-assembly of PS-b-PDMS into 193nm photoresist patterns and transfer into silicon by plasma etching

Sophie Böhme, Marc Zelsmann, Sophie Archambault, Mathieu Salaün, Cécile Girardot, Michael Delalande, Gilles Cunge, Erwine Pargon, Olivier Joubert

Proceedings Volume 9054, 90540O (2014) https://doi.org/10.1117/12.2047287

KEYWORDS: Silicon, Plasma etching, Etching, Plasma, Optical lithography, System on a chip, Polymers, Annealing, Picosecond phenomena, Directed self assembly

Read Abstract +

Block CoPolymer (BCP) self-assembly creates periodical patterns with feature sizes eventually below 10 nm. On plain substrates, ordering is only obtained in grains not larger than a few micrometers but self-assembly in trenches of a pattern (using so-called graphoepitaxy technique) can create long-range order between the polymer micro-domains. As a result, such directed self-assembly (DSA) approaches may be used as ultra-high resolution patterning schemes in the microelectronics industry. Due to its ease of processing, a large majority of the lithographic BCP work reported so far concerned polystyreneblock- polymethylmethacrylate (PS-b-PMMA). Researchers show now an increased interest to polystyrene-blockpolydimethylsiloxane (PS-b-PDMS) block copolymers due to its improved resolution. In the present study, typical industry-like photolithography stacks are patterned by combining graphoepitaxy with cylindrical PS-b-PDMS BCP and state of the art plasma etching technologies. The industry like photolithography stack is fabricated on 300 mm diameter silicon wafers, and composed of three layers: Spin-On-Carbon (SOC), Siliconcontaining Anti-Reflective Coating (SiARC) and 193 nm photolithography resist. About 60 nm deep trenches are first patterned by plasma etching in the SiARC/SOC stack using the 193 nm photolithography resist mask. These trenches are then used to confine the BCP and guide the self-assembly of horizontal PDMS cylinders. Wetting conditions allows avoiding the interfacial PDMS wetting layer at the bottom and lateral interfaces after the solvent annealing step. Finally, dedicated pulsed plasma etching conditions were developed in order to reveal the BCP patterns, transfer them into the remaining SOC layer under the trenches and finally into the underlying silicon substrate. 15 nm half-pitch dense line/space features are formed with a height up to 105 nm. In conclusion, long-range order line/space features could be produced by using horizontal cylindrical high Flory- Huggins parameter (χ) BCPs combined with industry-type photolithography stacks.

SPIE Journal Paper | 28 October 2013

Atomic force microscopy study of photoresist sidewall smoothing and line edge roughness transfer during gate patterning

Marc Fouchier, Erwine Pargon

JM3, Vol. 12, Issue 04, 041308, (October 2013) https://doi.org/10.1117/12.10.1117/1.JMM.12.4.041308

KEYWORDS: Line edge roughness, Atomic force microscopy, Etching, Plasma, Silicon, Critical dimension metrology, Photoresist materials, Plasma treatment, Plasma etching, Vacuum ultraviolet

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SPIE Journal Paper | 25 September 2013

Plasma treatments to improve line-width roughness during gate patterning

Laurent Azarnouche, Erwine Pargon, Kevin Menguelti, Marc Fouchier, Melisa Brihoum, Raphael Ramos, Olivier Joubert, Pascal Gouraud, Christophe Verove

JM3, Vol. 12, Issue 04, 041304, (September 2013) https://doi.org/10.1117/12.10.1117/1.JMM.12.4.041304

KEYWORDS: Line width roughness, Plasma, Vacuum ultraviolet, Plasma treatment, Optical lithography, Etching, Photoresist materials, Carbon, Plasma etching, Argon

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Proceedings Article | 10 April 2013 Paper

Paper

Evaluation of methods for noise-free measurement of LER/LWR using synthesized CD-SEM images

Vassilios Constantoudis, Erwine Pargon

Proceedings Volume 8681, 86812L (2013) https://doi.org/10.1117/12.2018245

KEYWORDS: Scanning electron microscopy, Fractal analysis, Line width roughness, Line edge roughness, Image filtering, Metrology, Edge roughness, Image segmentation, Edge detection, Signal to noise ratio

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Proceedings Article | 29 March 2013 Paper

Paper

A new method based on AFM for the study of photoresist sidewall smoothening and LER transfer during gate patterning

Marc Fouchier, Erwine Pargon, Benjamin Bardet

Proceedings Volume 8685, 86850B (2013) https://doi.org/10.1117/12.2011554

KEYWORDS: Line edge roughness, Etching, Plasma, Atomic force microscopy, Plasma treatment, Silicon, Critical dimension metrology, Vacuum ultraviolet, System on a chip, Photoresist materials

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Proceedings Article | 17 March 2012 Paper

Paper

Towards new plasma technologies for 22nm gate etch processes and beyond

T. Lill, L. Azarnouche, M. Darnon, E. Pargon, S. Banna, R. Blanc, M. Brihoum, D. Thibault, P. Bodart, C. Petit-Etienne, N. Posseme, O. Joubert, L. Vallier, M. Haas, G. Cunge

Proceedings Volume 8328, 83280D (2012) https://doi.org/10.1117/12.920312

KEYWORDS: Plasma, Etching, Silicon, Ions, Plasma etching, Semiconducting wafers, Silica, Oxides, Oxidation

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Proceedings Article | 17 March 2012 Paper

Paper

Plasma treatment to improve linewidth roughness during gate patterning

M. Brihoum, L. Azarnouche, R. Ramos, K. Menguelti, M. Fouchier, E. Pargon, O. Joubert, C. Verove, P. Gouraud

Proceedings Volume 8328, 83280H (2012) https://doi.org/10.1117/12.920314

KEYWORDS: Line width roughness, Plasma, Vacuum ultraviolet, Plasma treatment, Etching, Photoresist materials, Carbon, Optical lithography, Plasma etching, Fractal analysis

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Proceedings Article | 16 April 2011 Paper

Paper

193nm resist chemical modification induced by HBr cure plasma treatment: a TD-GC/MS outgassing study

Laurent Azarnouche, Raluca Tiron, Herve Fontaine, Claire Sourd, Sylviane Cetre, Erwine Pargon

Proceedings Volume 7972, 797215 (2011) https://doi.org/10.1117/12.879390

KEYWORDS: Plasma, Plasma treatment, Chemical analysis, Vacuum ultraviolet, Polymers, Semiconducting wafers, Statistical analysis, Laser induced fluorescence, Ions, Spectroscopy

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SPIE Journal Paper | 1 November 2010

Effects of resist sidewall morphology on line-edge roughness reduction and transfer during etching: is the resist sidewall after development isotropic or anisotropic?

Vassilios Constantoudis, George Kokkoris, Evangelos Gogolides, Erwine Pargon, M. Martin

JM3, Vol. 9, Issue 04, 041209, (November 2010) https://doi.org/10.1117/12.10.1117/1.3497601

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Proceedings Article | 26 March 2010 Paper

Paper

Is the resist sidewall after development isotropic or anisotropic? effects of resist sidewall morphology on LER reduction and transfer during etching

Erwine Pargon, Evangelos Gogolides, Vassilios Constantoudis, Mickael Martin, George Kokkoris

Proceedings Volume 7639, 76392T (2010) https://doi.org/10.1117/12.849300

KEYWORDS: Line edge roughness, Etching, Anisotropy, Line width roughness, 3D metrology, 3D modeling, Lithography, Plasma, Plasma etching, Photoresist processing

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SPIE Journal Paper | 1 October 2009

Line-edge-roughness transfer during plasma etching: modeling approaches and comparison with experimental results

Vassilios Constantoudis, George Kokkoris, Panayiota Xydi, Evangelos Gogolides, Erwine Pargon, Mickael Martin

JM3, Vol. 8, Issue 04, 043004, (October 2009) https://doi.org/10.1117/12.10.1117/1.3268365

KEYWORDS: Etching, Plasma etching, Line edge roughness, Anisotropic etching, Photoresist processing, 3D modeling, Line width roughness, Photoresist materials, Plasma, Silicon

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Proceedings Article | 1 April 2009 Paper

Paper

Line edge roughness transfer during plasma etching: modeling approaches and comparison with experimental results

Vassilios Constantoudis, Erwine Pargon, Panayiota Xydi, Mickael Martin, Evangelos Gogolides, George Kokkoris

Proceedings Volume 7273, 72732J (2009) https://doi.org/10.1117/12.823608

KEYWORDS: Etching, Anisotropic etching, Line edge roughness, Plasma etching, 3D modeling, Photoresist processing, Line width roughness, Photoresist materials, Silicon, Plasma

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Proceedings Article | 23 March 2009 Paper

Paper

A CD AFM study of the plasma impact on 193nm photoresist LWR: role of plasma UV and ions

L. Azarnouche, O. Joubert, E. Pargon, K. Menguelti, M. Martin, J. Foucher

Proceedings Volume 7272, 72720M (2009) https://doi.org/10.1117/12.813493

KEYWORDS: Plasma, Line width roughness, Chemistry, Photoresist materials, Plasma etching, Vacuum ultraviolet, Photoresist processing, Surface roughness, Ultraviolet radiation, Ions

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Proceedings Article | 4 December 2008 Paper

Paper

The CD metrology perspectives and future trends

M. Martin, V. Farys, J. Foucher, S. Bécu, E. Pargon, L. Babaud

Proceedings Volume 7140, 71400F (2008) https://doi.org/10.1117/12.805296

KEYWORDS: Critical dimension metrology, Scatterometry, Metrology, Scanning electron microscopy, Line width roughness, Semiconductors, Process control, 3D metrology, Calibration, Nanowires

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As we are moving towards the 32nm node and beyond, the tightening of CD control requirements is becoming very challenging for the semiconductor industry. Therefore, year after year the need for accuracy in CD measurement is becoming one of the major components in process control. In order to succeed reaching in a near future the 'true CD' that will guarantee high yield and high performances, the semiconductor industry has to quickly move into a new 'Industrial Reference Metrology Model'. Today the industrial configuration of CD Metrology relies on CD-SEM or Scatterometry techniques depending on the criticality of the level that is measured. Both techniques are challenged and tend to show strong fundamental limitations in term of accuracy when being used in their conventional configuration (conventional ellipsometry or reflectometry for Scatterometry and threshold algorithm for CD-SEM). Therefore a huge effort has to be made on reference metrology inside the industrial semiconductor environment. The calibration of CD-SEM through Pitch standard is definitely not enough because it does not guarantee any accuracy onto CD measurement which is the main output. In the same way, using Scatterometry in the industrial environment without several 'golden' standards that have been calibrated with a true reference technique is also definitely limited for future technological nodes in order to avoid correlation between outputs (CD, height, Sidewall Angle) that will inevitably lead to wrong process window definition and bad process control. In this paper we will present some experimental results illustrating in practical terms the needs for future CD metrology and the current limitations of industrial techniques. For example, we will talk about emerging 3D multiwires FET devices which require specific 3D metrology. Based on the conclusion which shows the increasingly need for accuracy in the industrial environment, we will discuss about a potential new Reference Metrology Landscape that take into account the limitations of standard industrial techniques (i.e CD-SEM and Scatterometry). These complementary metrology capabilities which will become mandatory in a near future will help the semiconductor industry to corner well with accurate measurement and Reference Metrology inside the fab.

Proceedings Article | 15 April 2008 Paper

Paper

Impact of HBr and Ar cure plasma treatments on 193nm photoresists

Xavier Mellhaoui, Damien Perret, Erwine Pargon, Arnaud Bazin, Bénédicte Mortini, Olivier Joubert

Proceedings Volume 6923, 692337 (2008) https://doi.org/10.1117/12.772573

KEYWORDS: Plasma treatment, Etching, Argon, Resistance, Photoresist materials, Plasma, Polymers, FT-IR spectroscopy, Photoresist processing, Ellipsometry

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Since they have been introduced to substitute poly(hydroxystyrene) based 248nm photoresists (PR), 193nm photoresists based on acrylate chemistry have raised issues regarding their dry etch resistance. These resists undergo severe degradations during typical dry etch processes involved in gate patterning, resulting in strong film loss, resist chemical modifications, critical surface roughening and also linewidth roughness (LWR). Other studies have shown that applying plasma treatments to 193nm photoresist patterns prior to the other plasma etching processes is a way to minimize PR degradation. Among these plasma treatments, the HBr plasma cure is known to reinforce the 193nm photoresist etch resistance and to reduce the resist LWR. In this study, we propose to go further in the understanding of cure plasma treatments impact on a 193nm model resist polymer (from Rohm & Haas Electronic Materials) using real time in-situ ellipsometry experiments correlated to several characterization techniques such as in-situ X-Ray Photoelectrons Spectroscopy (XPS), Fourier Transformed Infrared Spectroscopy (FTIR) and Dynamic Mechanical Analysis (DMA). The impact of Ar and HBr cure plasma treatments on 193nm PR is investigated and compared. Both treatments lead to surface and also bulk modifications of the resist films. XPS analyses show that the 10 first nanometers of the resist film are graphitized after only 20s plasma treatment, resulting in a higher carbon content and therefore indicating a better etch resistance following the Ohnishi parameter. Besides this superficial modification, FTIR show that the resist film can be completely modified after HBr cure plasma treatment with the removal of lactone and leaving groups present in the polymer. The same kinds of modifications are observed with Ar cure plasma treatment but only the first 80nm of the resist film are chemically modified. A significant decrease of the glass transition temperature is also observed with both treatments and is related to lactone and leaving group units that remain in the film Finally, we show that the resist etch resistance is indeed improved if the resist is previously cured. However, in the case of Ar plasma treatment, the etch resistance is only improved while etching the first 80nm chemically modified resist.

Proceedings Article | 3 April 2008 Paper

Paper

Paving the way for multiple applications for the 3D-AFM technique in the semiconductor industry

C. Dupré, S. Reyne, E. Pargon, M. Martin, J. Foucher

Proceedings Volume 6922, 69220F (2008) https://doi.org/10.1117/12.772675

KEYWORDS: Photoresist processing, Silicon, Line width roughness, FT-IR spectroscopy, Plasma, Semiconductors, Chemical analysis, Plasma etching, Process control, Optical lithography

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Proceedings Article | 12 April 2007 Paper

Paper

Study of 193nm resist degradation under various etch chemistries

Michael May, Benedicte Mortini, Arnaud Bazin, Olivier Joubert, Erwine Pargon

Proceedings Volume 6519, 65192N (2007) https://doi.org/10.1117/12.711415

KEYWORDS: Etching, Polymers, Plasma, Chemical analysis, Chemistry, FT-IR spectroscopy, Photoresist materials, Resistance, Dry etching, Argon

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Showing 5 of 27 publications

Conference Committee Involvement (11)

Advanced Etch Technology and Process Integration for Nanopatterning XIII

26 February 2024 | San Jose, California, United States

Advanced Etch Technology and Process Integration for Nanopatterning XII

28 February 2023 | San Jose, California, United States

Advanced Etch Technology and Process Integration for Nanopatterning XI

26 April 2022 | San Jose, California, United States

Advanced Etch Technology and Process Integration for Nanopatterning X

22 February 2021 | Online Only, California, United States

Advanced Etch Technology for Nanopatterning IX

25 February 2020 | San Jose, California, United States

Showing 5 of 11 Conference Committees

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