Synthesis of novel material often times requires novel analysis and characterization techniques. The possibility of combining sputtering (SPU) and Atomic Layer Deposition (ALD) in the same chamber, Sputtering Atomic Layer Augmented Deposition (SALAD), has produced interesting meta-dielectric nanocomposite systems that have unique optical and electronic properties, which may find novel applications [1]. Scanning Microwave Impedance Microscopy (sMIM) is a relatively novel characterization tool which permits assessment of local impedance. More recently, the utilization of microwaves in the near field regime has been an exciting topic in the field of high-resolution microscopy. We were able to demonstrate 1 nm resolution using scanning Microwave Impedance Microscopy (sMIM) where a spontaneously forming water meniscus concentrated the microwave fields in small regions [2]. Here we analyzed numerically sMIM with Finite Element Method (FEM) to investigate complex metal-dielectric structures created in a SALAD system. sMIM measurements provide information on both real and imaginary parts of the reflected microwave signal, which can be associated with the local conductivity and permittivity. Yet, these quantities can be influenced by the local topography, so extraction of the electronic contribution is a challenge. In this work, we perform tip-surface distance scans in order to gain a better understanding of the substrate response and compare with the FEM results.
Here we present advances in the use of near field microwaves, in both high-resolution microwave microscopy of nanostructured materials, as well as on the processing of materials with high microwave power density in selected areas. For the former, we utilize a commercial Scanning Microwave Impedance Microscope (PrimeNano Inc.) and demonstrate 3nm feature size. We discuss the mechanisms for image contrast, as well as draw equivalent circuits for a variety of metallic, semiconductor and dielectric systems. For the latter, we built a homemade system that enabled the concentration of microwaves in areas smaller than 100um diameter. We report on the system performance, and demonstrate the use of the tool in monitoring materials changes as heating takes place, by measuring and analyzing the reflected microwave signal. In summary, we demonstrate the usage, limits and opportunities of harnessing microwave power in the near field to map and modify materials properties in small scales.
In the emerging field of twistronics, new electronic devices based on bilayer graphene have shown distinct electronic properties that depend on the rotational misalignment of one crystalline layer with respect to another. Given present methods of preparing these bilayers, there is always some uncertainty in the actual versus targeted twist angle of a specific bilayer that can only be resolved by measuring the moiré patterns that are unique to a specific twist angle. Traditional methods enabling such a measurement, Transmission Electron Microscopy and Scanning Tunneling Microscopy, impose serious restrictions on the types of substrates supporting the bilayers, which, in turn, constrains the subsequent fabrication of any devices. We report here a new, non-destructive method to measure moiré patterns of bilayer graphene deposited on any smooth substrate, using the scanning probe technique known as scanning microwave impedance microscopy (sMIM) which enables the simultaneous generation of localized topography, capacitance and conductance images with nanometer 1 scale resolution . Moiré patterns were observed in samples prepared on various substrates with twist angles ranging from 0.02 to 6.7 degrees, beyond which the moiré patterns are too small to be resolved by the sMIM probes. We present some possible reasons for the various contrast mechanisms. Addressing the problem of variations across a bilayer surface due to localized moiré distortions that result from the tensile and shear forces involved in transferring a twisted bilayer to a substrate, we demonstrate how sMIM can precisely map the twist angle distribution across the film, and enable direct device and circuit routing.
At the limits of physical representation of bits, novel opportunities arise, in particular leveraging the granular nature of charges, photons and atoms. One interesting application is the generation of truly random numbers. The need of a true random sequence of numbers is strategic for a variety of applications, ranging from the game industry to cryptography. Physical sources that rely on natural phenomena spanning radioactive decay, chaotic oscillators, thermal and quantum noise have their own merit, but for the purposes of integration, attributes such as bandwidth and power consumption, need to be accounted for. Here we evaluate transition metal oxide two terminal devices, memristors operating near the quantum of conductance and negative differential resistance metal-insulator transition devices, as potential candidates for a solid state source. In particular, the caveats of each implementation will be covered, such as the necessity of postprocessing and scalability.
An integrated circuit combining imprinted, nanoscale crossbar switches with metal-oxide field effect transistors
(MOSFET) was fabricated and tested. Construction of the circuits began with fabrication of n-channel MOSFET
devices on silicon-on-insulator (SOI) substrates using CMOS compatible process techniques. To protect the FET devices
as well as provide a flat surface for subsequent nanoimprint lithography, passivation and planarization layers were
deposited. Crossbar junctions were then fabricated next to the FETs using imprint lithography to first define arrays of
parallel nanowires over which, a switchable material layer was deposited. This was followed by a second imprint proces
to construct another set of parallel wires on top of, and orthogonal to the first, to complete the nano-crossbar array with a
half pitch (hp) of 50 nm. The switchable crossbar devices were then connected to the gate of the FETs and the resulting
integrated circuit was tested using the FET as the output signal follower. This successful fabrication process serves as a
proof-of-principle demonstration and a platform for advanced CMOS/nanoscale crossbar hybrid logic circuits.
We have utilized the nanoimprint lithography process described this paper to fabricate a rewritable, nonvolatile memory cell with an equivalent density of 6.4 Gbits/cm2. The architecture of the circuit was based on an 8x8 crossbar structure with an active molecular layer sandwiched between the top and bottom electrodes. A liftoff process was utilized to produce the top and bottom electrodes, made of Pt/Ti bilayers. The active molecular layer was deposited by the Languir-Blodgett technique. We proposed the use of a new class of nanoimprint resist formulated by dissolving a polymer in its monomer, such as poly(benzyl methacrylate) dissolved in benzyl methacrylate (~8%/92% wt). The new resist enabled us to achieve Pt /Ti lines of 40 nm in width and 130 nm in pitch, as described in this paper. Our overall nanofabrication process has the advantages of relatively low temperature (~70°C) and pressure (~500 psi or 4.5 MPa), both of which are critical to preserving the integrity of the molecular layer.
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