Mr. Kunishige Edamatsu Profile

Kunishige Edamatsu

Senior Research Associate at Sumitomo Chemical Co Ltd

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Publications (5)

Proceedings Article | 26 March 2008 Paper

Molecular resists for EUV and EB lithography

Ichiki Takemoto, Nobuo Ando, Kunishige Edamatsu, Youngjoon Lee, Masayuki Takashima, Hiroyuki Yokoyama

Proceedings Volume 6923, 69231N (2008) https://doi.org/10.1117/12.771880

KEYWORDS: Line edge roughness, Lithography, Extreme ultraviolet lithography, Ions, Extreme ultraviolet, Polymers, Photoresist materials, Chemical analysis, Molecules, Chemically amplified resists

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Proceedings Article | 3 April 2007 Paper

Tailoring surface properties of ArF resists thin films with functionally graded materials (FGM)

Ichiki Takemoto, Nobuo Ando, Kunishige Edamatsu, Yusuke Fuji, Koji Kuwana, Kazuhiko Hashimoto, Junji Funase, Hiroyuki Yokoyama

Proceedings Volume 6519, 65191X (2007) https://doi.org/10.1117/12.707525

KEYWORDS: Polymers, Surface properties, Fluorine, Polymer thin films, Thin films, Lithography, Chemical analysis, X-rays, Photoemission spectroscopy, Interfaces

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Proceedings Article | 11 April 2006 Paper

Low leaching and low LWR photoresist development for 193 nm immersion lithography

Nobuo Ando, Youngjoon Lee, Takayuki Miyagawa, Kunishige Edamatsu, Ichiki Takemoto, Satoshi Yamamoto, Yoshinobu Tsuchida, Keiko Yamamoto, Shinji Konishi, Katsushi Nakano, Fujiwara Tomoharu

Proceedings Volume 6153, 615322 (2006) https://doi.org/10.1117/12.655586

KEYWORDS: Line width roughness, Polymers, Diffusion, Semiconducting wafers, Immersion lithography, Photoresist materials, Lithography, Photoresist developing, Scanners, Molecules

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With no apparent showstopper in sight, the adoption of ArF immersion technology into device mass production is not a matter of 'if' but a matter of 'when'. As the technology matures at an unprecedented speed, many of initial technical difficulties have been cleared away and the use of a protective layer known as top coat, initially regarded as a must, now becomes optional, for example. Our focus of interest has also sifted to more practical and production related issues such as defect reducing and performance enhancement. Two major types of immersion specific defects, bubbles and a large number of microbridges, were observed and reported elsewhere. The bubble defects seem to decrease by improvement of exposure tool. But the other type defect - probably from residual water spots - is still a problem. We suspect that the acid leaching from resist film causes microbridges. When small water spots were remained on resist surface after exposure, acid catalyst in resist film is leaching into the water spots even though at room temperature. After water from the spot is dried up, acid molecules are condensed at resist film surface. As a result, in the bulk of resist film, acid depletion region is generated underneath the water spot. Acid catalyzed deprotection reaction is not completed at this acid shortage region later in the PEB process resulting in microbridge type defect formation. Similar mechanism was suggested by Kanna et al, they suggested the water evaporation on PEB plate. This hypothesis led us to focus on reducing acid leaching to decrease residual water spot-related defect. This paper reports our leaching measurement results and low leaching photoresist materials satisfying the current leaching requirements outlined by tool makers without topcoat layer. On the other hand, Nakano et al reported that the higher receding contact angle reduced defectivity. The higher receding contact angle is also a key item to increase scan speed. The effort to increase the receding contact angle become very important issue for not only defectivity but also scanner throughput. Some of our experimental results along this line of study are also included in the report. The last topic covered is LWR (Line Width Roughness) as an essential leverage for performance improvement, especially for the smaller CD that immersion lithography is aiming to define. Our recent effort to find effect and working concept to reduce LWR with low leaching materials is also described.

Proceedings Article | 24 July 2002 Paper

Development and characterization of 193-nm ultra-thin resist process

Gilles Amblard, Richard Peters, Jonathan Cobb, Kunishige Edamatsu

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474227

KEYWORDS: Line edge roughness, Photoresist processing, 193nm lithography, Lithography, Semiconducting wafers, Fluorine, Scanning electron microscopy, Molecules, Scanners, Matrices

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Proceedings Article | 24 August 2001 Paper

Modification of 193-nm (ArF) photoresists by electron beam stabilization

Patrick Martens, Shigeki Yamamoto, Kunishige Edamatsu, Yasunori Uetani, Laurent Pain, Ramiro Palla, Matthew Ross, William Livesay

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436842

KEYWORDS: Etching, Electron beams, Photoresist processing, Lithography, 193nm lithography, Refraction, FT-IR spectroscopy, Scanning electron microscopy, Photoresist materials, Critical dimension metrology

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For the sub 130nm technology nodes, 193nm(ArF) lithography has become the technology path of choice. Similar to the 248nm technology set, the resist systems being used for 193nm lithography are based on chemical amplification to achieve high throughput at the low exposure energy at 193nm. The current ArF resist systems have experienced problems with etch selectivity and line slimming during CD-SEM measurement. Both of these issues are related to the resist platform and constituents used to achieve the desired lithographic performance. This investigation evaluates electron beam stabilization as a way of addressing both the etch selectivity and line slimming issues associated with some of the current 193nm resist systems. Varying levels of electron beam dose were evaluated in an attempt to understand the effects of energetic electrons on ArF resist materials. Chemical changes in the resist were monitored for blanket resist films by FTIR, film shrinkage, and changes in index of refraction, all as a function of dose level. An increase in modification of the resist is seen with increasing dose. Blanket resist etch rate studies were performed as a function of stabilization condition. The etch rate of the resist was found to decrease with increasing dose as compared to untreated resist. Correlation of the chemical changes and etch rate reductions are proposed for the resists considered. The CD changes induced by the electron beam stabilization were monitored as a function of dose applied. Minimal CD change was seen as a result of the stabilization process. The impact of the electron beam process on line slimming was evaluated by performing repeated measurements on resist features with different levels of electron beam dose. The line slimming was found to be significantly reduced for the higher dose levels considered. Etch selectivity was evaluated by cross-section SEM measurements after etch of features with different levels of stabilization. An increase in the etch selectivity and pattern stability were observed with increasing stabilization dose.

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