Mr. Nobuo Ando Profile

Nobuo Ando

at Sumitomo Chemical Co Ltd

SPIE Involvement:

Author

Publications (8)

Proceedings Article | 26 March 2008 Paper

Molecular resists for EUV and EB lithography

Ichiki Takemoto, Nobuo Ando, Kunishige Edamatsu, Youngjoon Lee, Masayuki Takashima, Hiroyuki Yokoyama

Proceedings Volume 6923, 69231N (2008) https://doi.org/10.1117/12.771880

KEYWORDS: Line edge roughness, Lithography, Extreme ultraviolet lithography, Ions, Extreme ultraviolet, Polymers, Photoresist materials, Chemical analysis, Molecules, Chemically amplified resists

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Proceedings Article | 3 April 2007 Paper

Tailoring surface properties of ArF resists thin films with functionally graded materials (FGM)

Ichiki Takemoto, Nobuo Ando, Kunishige Edamatsu, Yusuke Fuji, Koji Kuwana, Kazuhiko Hashimoto, Junji Funase, Hiroyuki Yokoyama

Proceedings Volume 6519, 65191X (2007) https://doi.org/10.1117/12.707525

KEYWORDS: Polymers, Surface properties, Fluorine, Polymer thin films, Thin films, Lithography, Chemical analysis, X-rays, Photoemission spectroscopy, Interfaces

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Proceedings Article | 11 April 2006 Paper

Low leaching and low LWR photoresist development for 193 nm immersion lithography

Nobuo Ando, Youngjoon Lee, Takayuki Miyagawa, Kunishige Edamatsu, Ichiki Takemoto, Satoshi Yamamoto, Yoshinobu Tsuchida, Keiko Yamamoto, Shinji Konishi, Katsushi Nakano, Fujiwara Tomoharu

Proceedings Volume 6153, 615322 (2006) https://doi.org/10.1117/12.655586

KEYWORDS: Line width roughness, Polymers, Diffusion, Semiconducting wafers, Immersion lithography, Photoresist materials, Lithography, Photoresist developing, Scanners, Molecules

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With no apparent showstopper in sight, the adoption of ArF immersion technology into device mass production is not a matter of 'if' but a matter of 'when'. As the technology matures at an unprecedented speed, many of initial technical difficulties have been cleared away and the use of a protective layer known as top coat, initially regarded as a must, now becomes optional, for example. Our focus of interest has also sifted to more practical and production related issues such as defect reducing and performance enhancement. Two major types of immersion specific defects, bubbles and a large number of microbridges, were observed and reported elsewhere. The bubble defects seem to decrease by improvement of exposure tool. But the other type defect - probably from residual water spots - is still a problem. We suspect that the acid leaching from resist film causes microbridges. When small water spots were remained on resist surface after exposure, acid catalyst in resist film is leaching into the water spots even though at room temperature. After water from the spot is dried up, acid molecules are condensed at resist film surface. As a result, in the bulk of resist film, acid depletion region is generated underneath the water spot. Acid catalyzed deprotection reaction is not completed at this acid shortage region later in the PEB process resulting in microbridge type defect formation. Similar mechanism was suggested by Kanna et al, they suggested the water evaporation on PEB plate. This hypothesis led us to focus on reducing acid leaching to decrease residual water spot-related defect. This paper reports our leaching measurement results and low leaching photoresist materials satisfying the current leaching requirements outlined by tool makers without topcoat layer. On the other hand, Nakano et al reported that the higher receding contact angle reduced defectivity. The higher receding contact angle is also a key item to increase scan speed. The effort to increase the receding contact angle become very important issue for not only defectivity but also scanner throughput. Some of our experimental results along this line of study are also included in the report. The last topic covered is LWR (Line Width Roughness) as an essential leverage for performance improvement, especially for the smaller CD that immersion lithography is aiming to define. Our recent effort to find effect and working concept to reduce LWR with low leaching materials is also described.

Proceedings Article | 19 February 2003 Paper

Preparation of polyperinaphthlenic organic semiconductor nanoparticles by excimer laser ablation and application of a few electronic devices

Satoru Nishio, Kazuyuki Tamura, Jun Murata, Hirokuni Matsukawa, Junko Kitahara, Teruhiko Kan, Akiyoshi Matsuzaki, Nobuo Ando, Yukinori Hato

Proceedings Volume 4830, (2003) https://doi.org/10.1117/12.486574

KEYWORDS: Lithium, Ions, Heterojunctions, Raman spectroscopy, Laser ablation, Electrodes, Doping, Excimer lasers, Silicon, Organic semiconductors

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Proceedings Article | 24 July 2002 Paper

Tandem type resin for chemically amplified KrF positive resist

Yasunori Uetani, Masumi Suetsugu, Koichiro Ochiai, Airi Yamada, Ryotaro Hanawa, Nobuo Ando

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474264

KEYWORDS: Diffusion, Head, Transmittance, Dry etching, Resistance, Picture Archiving and Communication System, Lithium, Semiconducting wafers, Manufacturing, Atmospheric modeling

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Proceedings Article | 18 June 2002 Paper

Preparation of carbonous nanoparticles for anode electrodes of ultrathin lithium ion rechargeable batteries by laser ablation

Satoru Nishio, Kazuyuki Tamura, Jun Murata, Junko Kitahara, Akiyoshi Matsuzaki, Motoyoshi Okumura, Nobuo Ando, Yukinori Hato

Proceedings Volume 4637, (2002) https://doi.org/10.1117/12.470612

KEYWORDS: Lithium, Ions, Doping, Raman spectroscopy, Electrodes, Particles, Laser ablation, Excimer lasers, Carbon, Chemical species

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Proceedings Article | 29 June 2001 Paper

Characterization of polyperinaphthalenic organic semiconductor thin films prepared by excimer laser ablation and application to anode electrodes for ultrathin rechargeable Li ion batteries

Satoru Nishio, Kazuyuki Tamura, Yukari Tsujine, Tomoko Fukao, Jun Murata, Masyoshi Nakano, Akiyoshi Matsuzaki, Hiroyasu Sato, Nobuo Ando, Yukinori Hato

Proceedings Volume 4274, (2001) https://doi.org/10.1117/12.432518

KEYWORDS: Lithium, Ions, Electrodes, Raman spectroscopy, Doping, Laser ablation, Thin films, Excimer lasers, Carbon, Organic semiconductors

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