Dr. Lin Lee Cheong Profile

Dr. Lin Lee Cheong

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Publications (5)

Proceedings Article | 9 July 2015 Paper

Exploring EUV mask backside defectivity and control methods

Christina Turley, Jed Rankin, Louis Kindt, Mark Lawliss, Luke Bolton, Kevin Collins, Lin Cheong, Ravi Bonam, Richard Poro, Takeshi Isogawa, Eisuke Narita, Masayuki Kagawa

Proceedings Volume 9658, 965811 (2015) https://doi.org/10.1117/12.2197383

KEYWORDS: Photomasks, Extreme ultraviolet, Manufacturing, Resistance, Particles, Scanners, Extreme ultraviolet lithography, Optical inspection, Inspection, Reflectivity

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Proceedings Article | 19 March 2015 Paper

EUV mask cleans comparison of frontside and dual-sided concurrent cleaning

Lin Lee Cheong, Louis Kindt, Christina Turley, Dusty Leonhard, John Boyle, Chris Robinson, Jed Rankin, Daniel Corliss

Proceedings Volume 9422, 94221M (2015) https://doi.org/10.1117/12.2085913

KEYWORDS: Photomasks, Ruthenium, Particles, Extreme ultraviolet, Reflectivity, Surface roughness, Extreme ultraviolet lithography, Scanners, EUV optics, Pellicles

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Proceedings Article | 13 March 2015 Paper

EUV processing and characterization for BEOL

Nicole Saulnier, Yongan Xu, Wenhui Wang, Lei Sun, Lin Lee Cheong, Romain Lallement, Genevieve Beique, Bassem Hamieh, John Arnold, Nelson Felix, Matthew Colburn

Proceedings Volume 9422, 94220T (2015) https://doi.org/10.1117/12.2086126

KEYWORDS: Semiconducting wafers, Etching, Line edge roughness, Line width roughness, Extreme ultraviolet lithography, Extreme ultraviolet, Critical dimension metrology, Scanning electron microscopy, Lithography, Scanners

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Proceedings Article | 28 March 2014 Paper

Closed-loop high-speed 3D thermal probe nanolithography

A. Knoll, M. Zientek, L. Cheong, C. Rawlings, P. Paul, F. Holzner, J. Hedrick, D. Coady, R. Allen, U. Dürig

Proceedings Volume 9049, 90490B (2014) https://doi.org/10.1117/12.2046201

KEYWORDS: Optical lithography, Polymers, Lithography, Silicon, Scanning probe lithography, Image resolution, Molecules, Nanolithography, Scanning electron microscopy, Photomasks

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Thermal Scanning Probe Lithography (tSPL) is an AFM based patterning technique, which uses heated tips to locally evaporate organic resists such as molecular glasses [1] or thermally sensitive polymers.[2][3] Organic resists offer the versatility of the lithography process known from the CMOS environment and simultaneously ensure a highly stable and low wear tip-sample contact due to the soft nature of the resists. Patterning quality is excellent up to a resolution of sub 15 nm,[1] at linear speeds of up to 20 mm/s and pixel rates of up to 500 kHz.[4] The patterning depth is proportional to the applied force which allows for the creation of 3-D profiles in a single patterning run.[2] In addition, non-destructive imaging can be done at pixel rates of more than 500 kHz.[4] If the thermal stimulus for writing the pattern is switched off the same tip can be used to record the written topography with Angstrom depth resolution. We utilize this unique feature of SPL to implement an efficient control system for reliable patterning at high speed and high resolution. We combine the writing and imaging process in a single raster scan of the surface. In this closed loop lithography (CLL) approach, we use the acquired data to optimize the writing parameters on the fly. Excellent control is in particular important for an accurate reproduction of complex 3D patterns. These novel patterning capabilities are equally important for a high quality transfer of two-dimensional patterns into the underlying substrate. We utilize an only 3-4 nm thick SiOx hardmask to amplify the 8±0.5 nm deep patterns created by tSPL into a 50 nm thick transfer polymer. The structures in the transfer polymer can be used to create metallic lines by a lift-off process or to further process the pattern into the substrate. Here we demonstrate the fabrication of 27 nm wide lines and trenches 60 nm deep into the Silicon substrate.[5] In addition, the combined read and write approach ensures that the lateral offset between read and write field is minimized. Thus we achieve high precision in marker-less stitching of patterning fields. A 2D cross-correlation technique is used to determine the offset of a neighboring patterning field relative to a previously written field with an accuracy of about 1 nm. We demonstrate stitching of 1 μm2 fields with ~5 nm accuracy and stitching of larger 10x10 μm2 fields with 10 nm accuracy.[6]

Proceedings Article | 1 October 2013 Paper

Thermal probe nanolithography: in-situ inspection, high-speed, high-resolution, 3D

Felix Holzner, Philip Paul, Michel Despont, Lin Lee Cheong, James Hedrick, Urs Dürig, Armin Knoll

Proceedings Volume 8886, 888605 (2013) https://doi.org/10.1117/12.2032318

KEYWORDS: Electron beam lithography, Optical lithography, Nanolithography, Silicon, Polymers, Scanning probe lithography, Reactive ion etching, Photomasks, Lithography, Scanning electron microscopy

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