Dr. Genevieve Beique Profile

Dr. Genevieve Beique

at IBM

SPIE Involvement:

Author

Publications (11)

Proceedings Article | 9 April 2018 Paper

Introduction of pre-etch deposition techniques in EUV patterning

Xun Xiang, Genevieve Beique, Lei Sun, Andre Labonte, Catherine Labelle, Bhaskar Nagabhirava, Phil Friddle, Stefan Schmitz, Michael Goss, Dominik Metzler, John Arnold

Proceedings Volume 10589, 105890K (2018) https://doi.org/10.1117/12.2297413

KEYWORDS: Etching, Extreme ultraviolet, Deposition processes, Optical lithography, Line width roughness, Line edge roughness, Plasma etching, Photoresist processing, Plasma, Extreme ultraviolet lithography

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Proceedings Article | 24 March 2017 Presentation + Paper

Single-expose patterning development for EUV lithography

Anuja De Silva, Karen Petrillo, Luciana Meli, Jeffrey Shearer, Genevieve Beique, Lei Sun, Indira Seshadri, Taehwan Oh, Seulgi Han, Nicole Saulnier, Joe Lee, John Arnold, Bassem Hamieh, Nelson Felix, Tsuyoshi Furukawa, Lovejeet Singh, Ramakrishnan Ayothi

Proceedings Volume 10143, 101431G (2017) https://doi.org/10.1117/12.2261216

KEYWORDS: Optical lithography, Extreme ultraviolet lithography, Extreme ultraviolet, Lithography, Materials processing, Photoresist processing, Etching, Metals, Quantum efficiency, Photoresist materials, Interfaces, Silicon

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Proceedings Article | 24 March 2016 Paper

LER improvement for sub-32nm pitch self-aligned quadruple patterning (SAQP) at back end of line (BEOL)

Nihar Mohanty, Richard Farrell, Cheryl Periera, Kal Subhadeep, Elliott Franke, Jeffrey Smith, Akiteru Ko, Anton DeVilliers, Peter Biolsi, Lei Sun, Genevieve Beique, Erik Hosler, Erik Verdujn, Wenhui Wang, Cathy Labelle, Ryoung-han Kim

Proceedings Volume 9782, 97820Q (2016) https://doi.org/10.1117/12.2219259

KEYWORDS: Etching, Line edge roughness, Optical lithography, Back end of line, Chemistry, Front end of line, Lithography, Ions, Amorphous silicon, Extreme ultraviolet

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Proceedings Article | 23 March 2016 Paper

Plasma etch patterning of EUV lithography: balancing roughness and selectivity trade off

Vinayak Rastogi, Genevieve Beique, Lei Sun, Hongyun Cottle, Yannick Feurprier, Andrew Metz, Kaushik Kumar, Cathy Labelle, John Arnold, Matthew Colburn, Alok Ranjan

Proceedings Volume 9782, 97820B (2016) https://doi.org/10.1117/12.2216840

KEYWORDS: Line edge roughness, Line width roughness, Plasma etching, Plasma, Etching, Optical lithography, Extreme ultraviolet, Photoresist processing, Extreme ultraviolet lithography, Lithography, Materials processing, Ions, Chemistry

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Proceedings Article | 18 March 2016 Paper

EUV patterning successes and frontiers

Nelson Felix, Dan Corliss, Karen Petrillo, Nicole Saulnier, Yongan Xu, Luciana Meli, Hao Tang, Anuja De Silva, Bassem Hamieh, Martin Burkhardt, Yann Mignot, Richard Johnson, Chris Robinson, Mary Breton, Indira Seshadri, Derren Dunn, Stuart Sieg, Eric Miller, Genevieve Beique, Andre Labonte, Lei Sun, Geng Han, Erik Verduijn, Eunshoo Han, Bong Cheol Kim, Jongsu Kim, Koichi Hontake, Lior Huli, Corey Lemley, Dave Hetzer, Shinichiro Kawakami, Koichi Matsunaga

Proceedings Volume 9776, 97761O (2016) https://doi.org/10.1117/12.2219894

KEYWORDS: Extreme ultraviolet, Optical lithography, Lithography, Extreme ultraviolet lithography, Oxides, Neodymium, Ions, Etching

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Proceedings Article | 18 March 2016 Paper

Comparison of left and right side line edge roughness in lithography

Lei Sun, Nicole Saulnier, Genevieve Beique, Erik Verduijn, Wenhui Wang, Yongan Xu, Hao Tang, Yulu Chen, Ryoung-han Kim, John Arnold, Nelson Felix, Matthew Colburn

Proceedings Volume 9778, 977822 (2016) https://doi.org/10.1117/12.2219665

KEYWORDS: Line edge roughness, Metrology, Lithography, Etching, Semiconductors, Scattering, Inspection, Critical dimension metrology, Photomasks, Roads, Extreme ultraviolet lithography

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SPIE Journal Paper | 13 July 2015

Line edge roughness frequency analysis during pattern transfer in semiconductor fabrication

Lei Sun, Wenhui Wang, Genevieve Beique, Min Sung, Obert Wood, Ryoung-Han Kim

JM3, Vol. 14, Issue 03, 033501, (July 2015) https://doi.org/10.1117/12.10.1117/1.JMM.14.3.033501

KEYWORDS: Line edge roughness, Line width roughness, Semiconductors, Reactive ion etching, Double patterning technology, Lithography, Oxides, Extreme ultraviolet lithography, Optical inspection, Visualization

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Proceedings Article | 19 March 2015 Paper

Application of frequency domain line edge roughness characterization methodology in lithography

Lei Sun, Wenhui Wang, Genevieve Beique, Obert Wood, Ryoung-Han Kim

Proceedings Volume 9424, 942404 (2015) https://doi.org/10.1117/12.2086961

KEYWORDS: Line edge roughness, Line width roughness, Etching, Visualization, Lithography, Semiconductors, Optical inspection, Neodymium, Semiconducting wafers, Edge roughness

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Proceedings Article | 17 March 2015 Paper

Plasma etch challenges with new EUV lithography material introduction for patterning for MOL and BEOL

Changwoo Lee, Bhaskar Nagabhirava, Michael Goss, Peng Wang, Phil Friddle, Stafan Schmitz, Jian Wu, Richard Yang, Yann Mignot, Nouradine Rassoul, Bassem Hamieh, Genevieve Beique, Andre Labonte, Catherine Labelle, John Arnold, John Mucci

Proceedings Volume 9428, 94280A (2015) https://doi.org/10.1117/12.2087133

KEYWORDS: Etching, Line edge roughness, Optical lithography, Extreme ultraviolet, Plasma, Line width roughness, Plasma etching, Extreme ultraviolet lithography, Photomasks, Ions

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Proceedings Article | 17 March 2015 Paper

Trench and hole patterning with EUV resists using dual frequency capacitively coupled plasma (CCP)

Yannick Feurprier, Katie Lutker-Lee, Vinayak Rastogi, Hiroie Matsumoto, Yuki Chiba, Andrew Metz, Kaushik Kumar, Genevieve Beique, Andre Labonte, Cathy Labelle, Yann Mignot, Bassem Hamieh, John Arnold

Proceedings Volume 9428, 94280F (2015) https://doi.org/10.1117/12.2086519

KEYWORDS: Etching, Optical lithography, Extreme ultraviolet, Plasma, Plasma etching, Photomasks, Photoresist processing, Line edge roughness, Line width roughness, Extreme ultraviolet lithography

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Proceedings Article | 13 March 2015 Paper

EUV processing and characterization for BEOL

Nicole Saulnier, Yongan Xu, Wenhui Wang, Lei Sun, Lin Lee Cheong, Romain Lallement, Genevieve Beique, Bassem Hamieh, John Arnold, Nelson Felix, Matthew Colburn

Proceedings Volume 9422, 94220T (2015) https://doi.org/10.1117/12.2086126

KEYWORDS: Semiconducting wafers, Etching, Line edge roughness, Line width roughness, Extreme ultraviolet lithography, Extreme ultraviolet, Critical dimension metrology, Scanning electron microscopy, Lithography, Scanners

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Showing 5 of 11 publications

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