Dr. M. Yusuf Tanrikulu Profile

Dr. M. Yusuf Tanrikulu

Associate Professor at Adana Science and Technology Univ

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Publications (10)

Proceedings Article | 29 May 2018 Presentation + Paper

Single layer microbolometer detector pixel using ZnO material

M. Yusuf Tanrikulu, Ciğdem Yildizak, Ali Okyay, Orhan Akar, Adem Sarac, Tayfun Akin

Proceedings Volume 10624, 1062417 (2018) https://doi.org/10.1117/12.2302996

KEYWORDS: Microbolometers, Sensors, Zinc oxide, Atomic layer deposition, Resistance, Device simulation, Defense and security

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SPIE Journal Paper | 15 March 2017

LWIR all-atomic layer deposition ZnO bilayer microbolometer for thermal imaging

Muhammet Poyraz, Kazim Gorgulu, Zulkarneyn Sisman, Mahmud Yusuf Tanrikulu, Ali Okyay

OE, Vol. 56, Issue 03, 037106, (March 2017) https://doi.org/10.1117/12.10.1117/1.OE.56.3.037106

KEYWORDS: Zinc oxide, Microbolometers, Sensors, Absorption, Thermography, Long wavelength infrared, Atomic layer deposition, Bolometers, Optical simulations, Infrared imaging

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SPIE Journal Paper | 1 August 2013

Three-level microbolometer structures: design and absorption optimization

M. Yusuf Tanrikulu

OE, Vol. 52, Issue 08, 083102, (August 2013) https://doi.org/10.1117/12.10.1117/1.OE.52.8.083102

KEYWORDS: Microbolometers, Sensors, Absorption, Structural design, Finite element methods, 3D vision, Sensor performance, Lithography, Infrared detectors, Infrared radiation

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Proceedings Article | 31 May 2012 Paper

An uncooled microbolometer focal plane array using heating based resistance nonuniformity compensation

Murat Tepegoz, Alp Oguz, Alperen Toprak, S. Ufuk Senveli, Eren Canga, M. Yusuf Tanrikulu, Tayfun Akin

Proceedings Volume 8353, 83531E (2012) https://doi.org/10.1117/12.964525

KEYWORDS: Sensors, Resistance, Staring arrays, Microbolometers, Readout integrated circuits, Silicon, Resistors, CMOS sensors, Analog electronics, Clocks

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Proceedings Article | 31 May 2012 Paper

An analysis for the broad-band absorption enhancement using plasmonic structures on uncooled infrared detector pixels

Sevil Lulec, Seniz Kucuk, Enes Battal, Ali Okyay, M. Yusuf Tanrikulu, Tayfun Akin

Proceedings Volume 8353, 83531D (2012) https://doi.org/10.1117/12.964549

KEYWORDS: Plasmonics, Absorption, Microbolometers, Metals, Silicon, Finite-difference time-domain method, Gold, Infrared radiation, Infrared detectors, Structural design

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Proceedings Article | 21 May 2011 Paper

A thermal conductance optimization approach for uncooled microbolometers

S. Ufuk Senveli, M. Yusuf Tanrikulu, Tayfun Akin

Proceedings Volume 8012, 80121T (2011) https://doi.org/10.1117/12.890234

KEYWORDS: Microbolometers, Resistance, Metals, Sensors, Temperature metrology, Resistors, Finite element methods, Infrared radiation, Absorption, Thermal modeling

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Proceedings Article | 21 May 2011 Paper

A detailed analysis for the absorption coefficient of multilevel uncooled infrared detectors

Seniz Kucuk, M. Yusuf Tanrikulu, Tayfun Akin

Proceedings Volume 8012, 80121R (2011) https://doi.org/10.1117/12.890236

KEYWORDS: Absorption, Resistance, Sensors, Infrared detectors, Microbolometers, Infrared radiation, Resistors, Free space, Reflection, Sensor performance

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Proceedings Article | 17 April 2008 Paper

A new method to estimate the absorption coefficient for uncooled infrared detectors

M. Tanrikulu, Fehmi Civitci, Tayfun Akin

Proceedings Volume 6940, 694027 (2008) https://doi.org/10.1117/12.786610

KEYWORDS: Absorption, Sensors, Infrared detectors, Microbolometers, Resistance, Metals, Thermal modeling, Infrared sensors, Reflection, Infrared radiation

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Proceedings Article | 10 October 2003 Paper

Low-cost uncooled infrared detector arrays in standard CMOS

Selim Eminoglu, M. Tanrikulu, Tayfun Akin

Proceedings Volume 5074, (2003) https://doi.org/10.1117/12.488185

KEYWORDS: Sensors, Staring arrays, Etching, Temperature metrology, Diodes, Silicon, Infrared detectors, Infrared radiation, Microbolometers, Metals

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This paper reports the development of a low-cost 128 x 128 uncooled infrared focal plane array (FPA) based on suspended and thermally isolated CMOS p⁺-active/n-well diodes. The FPA is fabricated using a standard 0.35 μm CMOS process followed by simple post-CMOS bulk micromachining that does not require any critical lithography or complicated deposition steps; and therefore, the cost of the uncooled FPA is almost equal to the cost of the CMOS chip. The post-CMOS fabrication steps include an RIE etching to reach the bulk silicon and an anisotropic silicon etching to obtain thermally isolated pixels. During the RIE etching, CMOS metal layers are used as masking layers, and therefore, narrow openings such as 2 μm can be defined between the support arms. This approach allows achieving small pixel size of 40 μm x 40 μm with a fill factor of 44%. The FPA is scanned at 30 fps by monolithically integrated multi-channel parallel readout circuitry which is composed of low-noise differential transconductance amplifiers, switched capacitor (SC) integrators, sample-and-hold circuits, and various other circuit blocks for reducing the effects of variations in detector voltage and operating temperature. The fabricated detector has a temperature coefficient of -2 mV/K, a thermal conductance value of 1.8 x 10^-7 W/K, and a thermal time constant value of 36 msec, providing a measured DC responsivity (R) of 4970 V/W under continuous bias. Measured detector noise is 0.69 μV in 8 kHz bandwidth at 30 fps scanning rate, resulting a measured detectivity (D*) of 9.7 x 10⁸ cm√HzW. Contribution of the 1/f noise component is found to be negligible due to the single crystal nature of the silicon n-well and its low value at low bias levels. The noise of the readout circuit is measured as 0.76 μV, resulting in an expected NETD value of 1 K when scanned at 30 fps using f=1 optics. This NETD value can be decreased below 350 mK by decreasing the electrical bandwidth with the help of increased number of parallel readout channels and by optimizing the post-CMOS etching steps. The uniformity of the array is very good due to the mature CMOS fabrication technology. The measured uncorrected differential voltage non-uniformity for the 128 x 128 array pixels after the CMOS fabrication is 0.2% with a standard deviation of only 1.5 mV, which is low due to the improved array structure that can compensate for the voltage drops along the routing resistances in the array. Non-uniformity of temperature sensitivity of the array pixels is measured to be less than 3% with a mean and standard deviation of -2.05 mV/K and 61 μV/K, respectively. The temperature sensitivity of the differential pixel voltages has a measured mean value of 2.3 μV/K, relaxing the requirements on the temperature stabilization. Considering its performance and its simple fabrication steps, the proposed method is very cost-effective to fabricate large format focal plane arrays for low-cost infrared imaging applications.

Proceedings Article | 5 August 2002 Paper

Low-cost small-pixel uncooled infrared detector for large focal plane arrays using a standard CMOS process

Selim Eminoglu, M. Yusuf Tanrikulu, Deniz Tezcan, Tayfun Akin

Proceedings Volume 4721, (2002) https://doi.org/10.1117/12.478839

KEYWORDS: Diodes, Sensors, Etching, Microbolometers, Silicon, Infrared detectors, Metals, Staring arrays, CMOS sensors, Resistance

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This paper reports the development of a low-cost, small pixel uncooled infrared detector using a standard CMOS process. The detector is based on a suspended and thermally isolated p⁺-active/n-well diode whose forward voltage changes due to an increase in the pixel temperature with absorbed infrared radiation. The detector is obtained with simple post-CMOS etching steps on dies fabricated using a standard n-well CMOS process. The post-CMOS process steps are achieved without needing any deposition or lithography, therefore, the cost of the detector is almost equal to the cost of the fabricated CMOS chip. Before suspending the pixel using electrochemical etch-stop technique in TMAH, the required etch openings to reach the silicon substrate are created with a simple dry etch process while CMOS metal layers are used as protection mask. Since the etch mask is implemented with available CMOS layers, the etch openings can be reduced significantly, allowing to implement small pixel sizes with reasonable fill factor. This approach is used to implement a 40micrometers x40micrometers diode pixel with a fill factor of 44%, suitable for large format FPAs. The p++)-active/n-well diode has a low 1/f noise, due to its single crystal nature and low bias requirement. Optimum pixel performance is achieved when the pixel is biased at 20(mu) A, where self-heating effect is less than 0.5K. Measurements and calculations show that this new detector has a thermal conductance (G_th) of 1.4E^-7W/K and provides a responsivity (R) of 5800V/W and a detectivity (D^*) value of 1.9x⁹cm(root)Hz/W when scanned at 30fps with an electrical bandwidth of 4kHz. If this detector is used to implement a 64x64 or 128x128 FPA with sufficient number of parallel readout channels, these FPAs will provide an NETD value of 195mK considering only the detector noise. When the readout noise is included, these FPAs are expected to provide NETD value below 300mK. Such FPAs are very suitable for ultra low-cost infrared imaging applications.

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