Ion shield plate equipped Microwave-ECR etcher was developed to enable reactive ion vertical etching and isotropic radical etching in one chamber. The radical etching of BCl3 could etch HfO2 (High-k) in the low-pressure region below 0.6 Pa. The addition of SiCl4 to BCl3 improved the selectivity to SiGe. For SiOC (Low-k), NF3/N2 gas chemistry can be used for highly selective etching to SiO2 and SiN. The radical etching of NF3/N2 has low carbon reduction than the reactive ion etching.
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