Prof. Petr Georgievich Eliseev Profile

Prof. Petr Georgievich Eliseev

at Univ of New Mexico

SPIE Involvement:

Author

Publications (46)

Proceedings Article | 21 March 2014 Paper

Numerical modeling of improvement in slope sensitivity of InGaN-based ring laser rotation sensor

Hemashilpa Kalagara, Petr Eliseev, Marek Osinski

Proceedings Volume 8980, 89800U (2014) https://doi.org/10.1117/12.2042744

KEYWORDS: Gyroscopes, Dispersion, Semiconductor lasers, Computer aided design, Sensors, Quantum wells, Waveguides, Refractive index, Numerical modeling, Laser systems engineering

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Proceedings Article | 14 March 2013 Paper

Slow/fast light due to induced dispersion in 1.55 um semiconductor lasers

Hemashilpa Kalagara, Peter Eliseev, Marek Osiński

Proceedings Volume 8619, 86190N (2013) https://doi.org/10.1117/12.2008622

KEYWORDS: Computer aided design, Dispersion, Semiconductor lasers, Slow light, Refractive index, Light wave propagation, Semiconductors, Numerical modeling, Quantum wells, Cladding

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Proceedings Article | 2 March 2012 Paper

Numerical simulation of nonlinear mode interactions in ridge-waveguide semiconductor lasers

Hemashilpa Kalagara, Petr Eliseev, Marek Osinski

Proceedings Volume 8255, 82550D (2012) https://doi.org/10.1117/12.914393

KEYWORDS: Computer aided design, Dispersion, Wave propagation, Cladding, Semiconductor lasers, Numerical simulations, Gallium arsenide, Quantum wells, Nonlinear optics, Terahertz radiation

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Proceedings Article | 22 March 2007 Paper

Influence of nonlinear dispersion of the refraction index on the Sagnac effect in semiconductor ring lasers

Peter Eliseev, Marek Osiński

Proceedings Volume 6468, 64680B (2007) https://doi.org/10.1117/12.717173

KEYWORDS: Dispersion, Refractive index, Semiconductor lasers, Semiconductors, Geometrical optics, Gyroscopes, Phase velocity, Nonlinear optics, Gallium arsenide, Active optics

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Proceedings Article | 5 March 2007 Paper

Analysis of the nonlinear mechanisms of light absorption in transparent materials under the ultrashort pulse laser action

Irina Zavestovskaya, Peter Eliseev, Oleg Krokhin

Proceedings Volume 6595, 65951S (2007) https://doi.org/10.1117/12.725818

KEYWORDS: Absorption, Laser ablation, Gallium nitride, Ultrafast phenomena, Laser damage threshold, Ionization, Pulsed laser operation, Semiconductors, Sapphire, Solids

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Proceedings Article | 13 March 2006 Paper

Nonlinear mode interaction as a mechanism to obtain slow/fast light in diode lasers

Peter Eliseev, Hongjun Cao, Chiyu Liu, Gennady Smolyakov, Marek Osiński

Proceedings Volume 6115, 61150U (2006) https://doi.org/10.1117/12.661347

KEYWORDS: Semiconductor lasers, Refractive index, Dispersion, Slow light, Semiconductors, Nonlinear optics, Gyroscopes, Absorption, Wave propagation, Dielectrics

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Proceedings Article | 28 April 2005 Paper

Modeling of injection-induced conductivity effects in light-emitting and laser diodes

P. Eliseev

Proceedings Volume 5722, (2005) https://doi.org/10.1117/12.601819

KEYWORDS: Resistance, Diodes, Semiconductor lasers, Laser damage threshold, Quantum wells, Modulation, Waveguides, Physics, Light emitting diodes, Temperature metrology

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Proceedings Article | 28 April 2005 Paper

Mode beating spectra from integrated twin ring diode lasers

Chiyu Liu, Hongjun Cao, Marcita Benavidez, Hui Deng, Hai Ling, Gregory Peake, Gennady Smolyakov, Petr Eliseev, Marek Osinski

Proceedings Volume 5722, (2005) https://doi.org/10.1117/12.601820

KEYWORDS: Waveguides, Photodetectors, Semiconductor lasers, Photonic integrated circuits, Gallium, Heterodyning, Photodiodes, Sensors, Aluminum, Laser optics

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Proceedings Article | 18 June 2004 Paper

Radio-frequency spectra of long-cavity diode lasers under CW pumping

Chiyu Liu, Hongjun Cao, Marcita Benavidez, Hai Ling, Hui Su, Gregory Peake, Petr Eliseev, Marek Osinski

Proceedings Volume 5349, (2004) https://doi.org/10.1117/12.540321

KEYWORDS: Semiconductor lasers, Gallium, Continuous wave operation, Gallium arsenide, Electroluminescence, FT-IR spectroscopy, Spectrum analysis, Quantum wells, Aluminum, Heterojunctions

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Proceedings Article | 18 June 2004 Paper

Shell model of semiconductor quantum dots

Petr Eliseev, Dan Popescu, T. Torchynska, Andreas Stintz, Kevin Malloy

Proceedings Volume 5349, (2004) https://doi.org/10.1117/12.540313

KEYWORDS: Oscillators, Electrons, Indium arsenide, Quantum dots, Semiconductors, Motion models, Gallium arsenide, Quantization, Chemical species, Particles

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Proceedings Article | 18 June 2004 Paper

Optical and electrical properties of interdigitated InGaN/GaN green light-emitting diodes

Jinhyun Lee, Petr Eliseev, Marek Osinski, Dong-Seung Lee, Jeffrey Ramer, Doru Florescu, Eric Armour

Proceedings Volume 5349, (2004) https://doi.org/10.1117/12.540327

KEYWORDS: Light emitting diodes, Annealing, Green light emitting diodes, Resistance, Electroluminescence, Sapphire, Gallium nitride, Diodes, Magnesium, Quantum wells

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Proceedings Article | 25 July 2003 Paper

Multishell photoluminescence from InAs/InGaAs quantum dots

Petr Eliseev, Kevin Malloy, Andreas Stintz, T. Torchynska, H. Alfaro Lopez, R. Pena Sierra

Proceedings Volume 4986, (2003) https://doi.org/10.1117/12.482322

KEYWORDS: Spherical lenses, Oscillators, Quantum dots, Luminescence, Indium arsenide, Bessel functions, Gallium arsenide, Quantum wells, Data modeling, Temperature metrology

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Proceedings Article | 25 July 2003 Paper

Electrical-thermal-optical simulation of GaAs/AlGaAs oxide-confined VCSELs

Vladimir Smagley, Min Lu, Gennady Smolyakov, Petr Eliseev, Marek Osinski, Brian Riely, Hongen Shen, George Simonis

Proceedings Volume 4986, (2003) https://doi.org/10.1117/12.482324

KEYWORDS: Gallium, Vertical cavity surface emitting lasers, Aluminum, Refractive index, Oxides, Gallium arsenide, 3D modeling, Quantum wells, Instrument modeling, Active optics

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Proceedings Article | 25 July 2003 Paper

Properties of InGaN/AlInGaN/AlGaN quantum-well UV light-emitting diodes

Jinhyun Lee, Petr Eliseev, Marek Osinski, Dong-Seung Lee, Doru Florescu, Shiping Guo, Milan Pophristic

Proceedings Volume 4986, (2003) https://doi.org/10.1117/12.482325

KEYWORDS: Quantum wells, Light emitting diodes, Ultraviolet radiation, Gallium, Temperature metrology, Gallium nitride, Electroluminescence, Indium, Diodes, Aluminum

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Proceedings Article | 1 July 2003 Paper

Modeling of the capture and thermal escape of the carriers from InAs quantum dots at different temperatures

Dan Popescu, Petr Eliseev, Andreas Stintz, Kevin Malloy

Proceedings Volume 4999, (2003) https://doi.org/10.1117/12.485706

KEYWORDS: Quantum wells, Quantum dots, Indium arsenide, Gallium arsenide, Luminescence, Temperature metrology, Gallium, Thermal modeling, Neodymium, Electron holes

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Proceedings Article | 1 July 2003 Paper

Confocal photoluminescence method for measuring the carrier migration in structures with quantum dots

Dan Popescu, Petr Eliseev, Kevin Malloy

Proceedings Volume 4999, (2003) https://doi.org/10.1117/12.485707

KEYWORDS: Quantum wells, Gallium arsenide, Quantum dots, Indium arsenide, Confocal microscopy, Luminescence, Gallium, Objectives, Diffusion, Temperature metrology

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Proceedings Article | 11 June 2003 Paper

Gain and linewidth enhancement factor in InAs-quantum-dot and InAs-quantum-dash laser heterostructures

Petr Eliseev, Alexander Ukhanov, Andreas Stintz, Kevin Malloy

Proceedings Volume 5023, (2003) https://doi.org/10.1117/12.514310

KEYWORDS: Semiconductor lasers, Quantum dots, Diodes, Indium arsenide, Heterojunctions, Nanostructures, Anisotropy, Quantum dot lasers, Quantum optics, Laser damage threshold

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Proceedings Article | 13 September 2002 Paper

Applications of high-power laser technology to wide-bandgap nitride semiconductor processing

Petr Eliseev, Andrei Ionin, Yurii Klimachev, Dmitrii Sinitsyn, Jinhyun Lee, Marek Osinski

Proceedings Volume 4760, (2002) https://doi.org/10.1117/12.482082

KEYWORDS: Gallium nitride, Sapphire, Absorption, Laser ablation, Annealing, Gallium, Laser processing, Laser irradiation, Semiconductors, Laser applications

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Proceedings Article | 12 June 2002 Paper

Effects of resonant mode coupling on near- and far-field characteristics of InGaN-based lasers

Gennady Smolyakov, Petr Eliseev, Marek Osinski

Proceedings Volume 4646, (2002) https://doi.org/10.1117/12.470562

KEYWORDS: Waveguides, Cladding, Gallium nitride, Refractive index, Semiconductor lasers, Near field, Waveguide modes, Near field optics, Quantum wells, Superposition

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Proceedings Article | 5 April 2002 Paper

1.54-um spontaneous and stimulated emission of Er-2O centers in GaAs: experiments and modeling

Petr Eliseev, S. Gastev, A. Koizumi, Y. Fujiwara, Y. Takeda

Proceedings Volume 4645, (2002) https://doi.org/10.1117/12.461666

KEYWORDS: Ions, Erbium, Gallium arsenide, Semiconductors, Luminescence, Silicon, Oxygen, Laser applications, Doping, Electrons

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Proceedings Article | 9 July 2001 Paper

Unipolar absorption of quantum dot: theoretical estimation of the cross-section

Petr Eliseev

Proceedings Volume 4283, (2001) https://doi.org/10.1117/12.432566

KEYWORDS: Absorption, Electrons, Quantum dots, Semiconductors, Oscillators, Photodetectors, Estimation theory, Scattering, Holmium, Semiconductor lasers

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Proceedings Article | 9 July 2001 Paper

Analysis of vector LP modes in VCSELs using the effective frequency method

Gennady Smolyakov, Petr Eliseev, Marek Osinski

Proceedings Volume 4283, (2001) https://doi.org/10.1117/12.432557

KEYWORDS: Vertical cavity surface emitting lasers, Refractive index, Magnetism, Polarization, Dielectrics, Quantum wells, Mirrors, Instrument modeling, Waveguides, Interfaces

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Proceedings Article | 9 March 2001 Paper

Waveguide optics of new short-wavelength laser diodes

Petr Eliseev

Proceedings Volume 4354, (2001) https://doi.org/10.1117/12.418823

KEYWORDS: Gallium nitride, Semiconductor lasers, Waveguides, Indium gallium nitride, Vertical cavity surface emitting lasers, Diodes, Refractive index, Active optics, Sapphire, Laser scattering

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Proceedings Article | 16 August 2000 Paper

GaN surface ablation by femtosecond pulses: atomic force microscopy studies and accumulation effects

Petr Eliseev, Saulius Juodkazis, Tamoya Sugahara, Hong-Bo Sun, Shigeki Matsuo, Shiro Sakai, Hiroaki Misawa

Proceedings Volume 4065, (2000) https://doi.org/10.1117/12.407377

KEYWORDS: Gallium nitride, Laser ablation, Atomic force microscopy, Absorption, Microscopes, Objectives, Laser processing, Laser irradiation, Femtosecond phenomena, Mirrors

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Laser-induced ablation and surface processing are investigated in GaN epitaxial layers irradiated by 130 - 150 fs pulses at wavelength of 398 and 795 nm. These layers are important materials in optoelectronics and microelectronics. GaN is an inert and hard substance with very limited possibility of wet etching. Laser processing seems to be suitable for different steps of fabrication of nitride-based devices (mesa shaping, grooving, scribing, mirror and surface grating preparation, etc.). Atomic force microscopy is used for a high-resolution investigation of initial and irradiated GaN surface. Imperfections of the mirror-like as-grown (0001) surface are identified (monolayer steps, open-core dislocations). The laser-induced damage threshold (LIDT) is determined at 398 and 795 nm. The dependence of LIDT(N) on the number of shots, N, is tested in accordance with the phenomenological relation LIDT(N) equals LIDT(1)N^((gamma -1)) in order to reveal the defects accumulation in an ablation process of GaN surface ((gamma) equals 1 corresponds to an accumulation-free ablation). The damage of GaN is found to be free of accumulation effect at low pulse energy below 0.6 X LIDT(1) at 795 nm and some effect is found at higher energy with (gamma) equals 0.86 at multi-shot irradiation conditions. A successful surface processing of GaN epitaxial layer (grown by MOCVD technique) is demonstrated for a single-pulse laser ablation of a typical energy 4 - 6 times higher than LIDT(1). The ablation depth up to 500 nm is achievable. The edge is almost vertical and the rim of a laser-ablated channel is free of debris and peel-off. There is an experimental evidence of a successful laser processing by two-photon absorption of femtosecond pulses at GaN surface with photon energy in a transmission region of the material. Photoluminescence (PL) of the defect-related Y-band at 550 - 600 nm was not enhanced at the rim of ablated region when energy of ablated pulses was 3 X LIDT(1). The PL of GaN was excited by two-photon absorption of 110 +/- 10 fs illumination at 726 nm.

Proceedings Article | 14 July 2000 Paper

Design of InGaN/GaN/AlGaN vertical-cavity surface-emitting lasers using electrical-thermal-optical simulation

Marek Osinski, Vladimir Smagley, Chunsheng Fu, Gennady Smolyakov, Petr Eliseev

Proceedings Volume 3944, (2000) https://doi.org/10.1117/12.391440

KEYWORDS: Vertical cavity surface emitting lasers, Resistance, Refractive index, Gallium nitride, Quantum wells, Diffusion, Continuous wave operation, 3D modeling, Optical simulations

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Proceedings Article | 1 February 2000 Paper

Laser-induced damage threshold and laser processing of GaN

Hong-Bo Sun, Saulius Juodkazis, Petr Eliseev, Tamoya Sugahara, Tao Wang, Shigeki Matsuo, Shiro Sakai, Hiroaki Misawa

Proceedings Volume 3885, (2000) https://doi.org/10.1117/12.376976

KEYWORDS: Gallium nitride, Pulsed laser operation, Laser energy, Laser damage threshold, Laser processing, Laser ablation, Laser induced damage, Atomic force microscopy, Objectives, Femtosecond phenomena

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Proceedings Article | 12 November 1999 Paper

Optical properties of InGaN grown by MOCVD on sapphire and on bulk GaN

Marek Osinski, Petr Eliseev, Jinhyun Lee, Vladimir Smagley, Tamoya Sugahara, Shiro Sakai

Proceedings Volume 3896, (1999) https://doi.org/10.1117/12.370346

KEYWORDS: Indium gallium nitride, Gallium nitride, Quantum wells, Sapphire, Electroluminescence, Luminescence, Indium, Metalorganic chemical vapor deposition, Semiconductors, Diffusion

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Proceedings Article | 6 August 1999 Paper

High-injection behavior of InGaAs quantum well

Petr Eliseev, Irina Akimova

Proceedings Volume 3625, (1999) https://doi.org/10.1117/12.356933

KEYWORDS: Quantum wells, Excitons, Indium gallium arsenide, Semiconductor lasers, Gallium arsenide, Etching, Diodes, Plasma, Cladding, Mirrors

Proceedings Article | 6 August 1999 Paper

Design of InGaN/GaN/AlGaN VCSELs using the effective frequency method

Gennady Smolyakov, Vladimir Smagley, Wlodzimierz Nakwaski, Petr Eliseev, Marek Osinski

Proceedings Volume 3625, (1999) https://doi.org/10.1117/12.356891

KEYWORDS: Vertical cavity surface emitting lasers, Gallium nitride, Refractive index, Quantum wells, Absorption, Active optics, Structural design, Mirrors, Laser resonators, Metals

Proceedings Article | 20 January 1999 Paper

High-power semiconductor lasers and diode-pumped solid state lasers

Petr Eliseev, Victor Bezotosny

Proceedings Volume 3688, (1999) https://doi.org/10.1117/12.337487

KEYWORDS: Semiconductor lasers, Diodes, Continuous wave operation, Optical pumping, Nd:YAG lasers, Solid state lasers, Fiber lasers, Gallium arsenide, Vertical cavity surface emitting lasers, High power lasers

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Proceedings Article | 7 July 1998 Paper

Current self-distribution effect in vertical-cavity surface-emitting semiconductor lasers

Vladimir Smagley, Gennady Smolyakov, Petr Eliseev, Marek Osinski, Andrzej Przekwas

Proceedings Volume 3283, (1998) https://doi.org/10.1117/12.316681

KEYWORDS: Oxides, Vertical cavity surface emitting lasers, Waveguides, Active optics, Semiconductor lasers, Numerical simulations, Electrodes, Dielectrics, Diodes, Laser development

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Proceedings Article | 22 June 1998 Paper

Three-dimensional simulation of oxide-confined vertical-cavity surface-emitting semiconductor lasers

Marek Osinski, Vladimir Smagley, Gennady Smolyakov, Tengiz Svimonishvili, Petr Eliseev, George Simonis

Proceedings Volume 3419, 34190Q (1998) https://doi.org/10.1117/12.311010

KEYWORDS: Vertical cavity surface emitting lasers, 3D modeling, Optical simulations, Semiconductor lasers, Numerical modeling, Thermal modeling, Diodes, Diffusion, Waveguides, Data acquisition

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Proceedings Article | 20 April 1998 Paper

Optical damage and self-damage in semiconductor laser materials

Petr Eliseev

Proceedings Volume 3244, (1998) https://doi.org/10.1117/12.307025

KEYWORDS: Semiconductor lasers, Optical damage, Laser irradiation, Data modeling, Laser optics, Laser damage threshold, Transparency, Absorption

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Proceedings Article | 6 June 1997 Paper

Comparison of models for calculation of optical gain in gallium nitride

Vladimir Smagley, Petr Eliseev, Marek Osinski

Proceedings Volume 2994, (1997) https://doi.org/10.1117/12.275555

KEYWORDS: Gallium nitride, Absorption, Laser damage threshold, Heterojunctions, Indium gallium nitride, Transparency, Optimization (mathematics), Neodymium, Gallium arsenide, Solids

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Proceedings Article | 6 June 1997 Paper

Modeling of current crowding accompanying optical filament formation in semiconductor lasers and amplifiers

Petr Eliseev, Alexei Glebov, Marek Osinski

Proceedings Volume 2994, (1997) https://doi.org/10.1117/12.275609

KEYWORDS: Semiconductor lasers, Resistance, Diodes, Optical amplifiers, Hole burning spectroscopy, Diffusion, Quantum wells, Electrodes, Refractive index, Laser damage threshold

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Proceedings Article | 4 April 1997 Paper

Current transport and emission mechanisms in high-brightness green InGaN/AlGaN/GaN single-quantum-well light-emitting diodes

Marek Osinski, Piotr Perlin, Petr Eliseev, Julien Furioli

Proceedings Volume 3002, (1997) https://doi.org/10.1117/12.271044

KEYWORDS: Light emitting diodes, Electroluminescence, Temperature metrology, Indium gallium nitride, Diodes, Quantum wells, Blue light emitting diodes, Excitons, Quantum dots, Luminescence

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Proceedings Article | 1 May 1996 Paper

Analysis of impurity-related blue emission in Zn-doped GaN/InGaN/AlGaN double heterostructure

Petr Eliseev, Vladimir Smagley, Piotr Perlin, Philippe Sartori, Marek Osinski

Proceedings Volume 2693, (1996) https://doi.org/10.1117/12.238944

KEYWORDS: Phonons, Gallium nitride, Zinc, Luminescence, Indium gallium nitride, Diodes, Temperature metrology, Heterojunctions, Light emitting diodes, Electrons

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Proceedings Article | 1 May 1996 Paper

Optimization of active-layer and cavity design parameters for low-threshold GaN/AlGaN double-heterostructure diode lasers

Marek Osinski, Petr Eliseev

Proceedings Volume 2693, (1996) https://doi.org/10.1117/12.238945

KEYWORDS: Gallium nitride, Semiconductor lasers, Interfaces, Laser damage threshold, Quantum wells, Heterojunctions, Transition metals, Ultraviolet radiation, Crystals, Active optics

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Proceedings Article | 1 May 1996 Paper

Emission of strained-layer InGaAs quantum well under high-injection level: study of bandfilling and broadening effects

Irina Akimova, Petr Eliseev

Proceedings Volume 2693, (1996) https://doi.org/10.1117/12.238999

KEYWORDS: Quantum wells, Gallium arsenide, Electroluminescence, Optical filters, Indium gallium arsenide, Photodiodes, Near field optics, Semiconducting wafers, Diodes

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Proceedings Article | 19 June 1995 Paper

Negative differential gain in strained-layer InGaAs quantum well laser diodes

Petr Eliseev, Aleksandr Drakin

Proceedings Volume 2399, (1995) https://doi.org/10.1117/12.212506

KEYWORDS: Semiconductor lasers, Polarization, Waveguides, Indium gallium arsenide, Quantum wells, Q switches, Switching, Temperature metrology, Laser damage threshold, Pulsed laser operation

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Proceedings Article | 24 April 1995 Paper

AlGaInP/GaInP visible laser diodes with extremely high characteristic temperature To

Alexander Chelny, Vladimir Gorbylev, Alexander Aluev, Petr Eliseev, Vadim Konyaev, Michail Zverkov, Victor Krichevsky, Alexander Polyakov

Proceedings Volume 2397, (1995) https://doi.org/10.1117/12.206856

KEYWORDS: Doping, Heterojunctions, Zinc, Hydrogen, Annealing, Semiconductor lasers, Chemical species, Indium gallium phosphide, Solids, Aluminium gallium indium phosphide

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Proceedings Article | 30 June 1994 Paper

Features of the energy spectrum of free carriers and gain in the corrugated quantum well stuctures

Alexander Onishchenko, Petr Eliseev

Proceedings Volume 2146, (1994) https://doi.org/10.1117/12.178537

KEYWORDS: Quantum wells, Modulation, Semiconductor lasers, Transition metals, Solids, Profiling, Active optics, Gases, Superlattices, Gallium arsenide

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Proceedings Article | 30 June 1994 Paper

Geometry considerations for more stable laser beam from semiconductor laser and amplifier

Petr Eliseev

Proceedings Volume 2146, (1994) https://doi.org/10.1117/12.178533

KEYWORDS: Semiconductor lasers, Optical amplifiers, Nonlinear optics, Semiconductors, Refractive index, Laser damage threshold, Gallium arsenide, Thermal effects, Oscillators, Diffraction

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Proceedings Article | 30 June 1994 Paper

Study of strained-layer InGaAs/GaAs SQW RW lasers including analysis of internal coupling of modes and antiguiding effects

Petr Eliseev, Gerhard Beister, Aleksandr Drakin, Goetz Erbert, Vadim Konyaev, Juergen Maege

Proceedings Volume 2146, (1994) https://doi.org/10.1117/12.178509

KEYWORDS: Modes of laser operation, Diodes, Semiconductor lasers, Laser damage threshold, Cladding, Modeling, Silver, Quantum wells, GRIN lenses, Computer simulations

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Proceedings Article | 11 May 1993 Paper

Quaternary laser devices: history and state of the art

Petr Eliseev

Proceedings Volume 1979, (1993) https://doi.org/10.1117/12.144147

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Proceedings Article | 16 December 1992 Paper

Semiconductor laser amplifier and its optoelectronic properties for application in lightwave communication systems

V. Luc, Petr Eliseev, M. Man'ko, M. Tsotsoriya

Proceedings Volume 1622, (1992) https://doi.org/10.1117/12.636835

KEYWORDS: Optoelectronics, Semiconductor lasers, Diodes, Optical amplifiers, Telecommunications, Absorption, Fiber amplifiers, Diagnostics, Laser damage threshold, Fiber lasers

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Showing 5 of 46 publications

Conference Committee Involvement (1)

Optical Modeling and Performance Predictions III

29 August 2007 | San Diego, California, United States

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