Mr. Ryan Chou Profile

Ryan Chou

at Siemens EDA

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Publications (6)

Proceedings Article | 13 March 2012 Paper

Can fast rule-based assist feature generation in random-logic contact layout provide sufficient process window?

Ahmed Omran, George Lippincott, Jochen Schacht, Junjiang Lei, Le Hong, Loran Friedrich, Regina Shen, Ryan Chou

Proceedings Volume 8326, 83261P (2012) https://doi.org/10.1117/12.915787

KEYWORDS: SRAF, Optical proximity correction, Logic, Fiber optic illuminators, Printing, Photomasks, Visualization, Lithography, Manufacturing, Resolution enhancement technologies

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Proceedings Article | 14 October 2011 Paper

Dynamic feedback controller for optical proximity correction

Ahmed Omran, Jochen Schacht, Jully Pan, Junjiang Lei, Le Hong, Mohamed Al-Imam, Nick Cobb, Regina Shen, Ryan Chou

Proceedings Volume 8166, 81663I (2011) https://doi.org/10.1117/12.896677

KEYWORDS: Optical proximity correction, Feedback control, Photomasks, Logic, Visualization, Semiconducting wafers, Diffraction, Lithography, Detection and tracking algorithms, Critical dimension metrology

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Proceedings Article | 13 March 2009 Paper

The PIXBAR OPC for contact-hole pattern in sub-70-nm generation

KunYuan Chen, ChunCheng Liao, ShuHao Chen, Todd Wey, Phoeby Cheng, Pinjan Chou, Jochen Schacht, Dyiann Chou, Srividya Jayaram

Proceedings Volume 7275, 72750Z (2009) https://doi.org/10.1117/12.813985

KEYWORDS: Optical proximity correction, Semiconducting wafers, Atrial fibrillation, Photomasks, Autoregressive models, Reticles, Electroluminescence, Lithography, Model-based design, Manufacturing

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Proceedings Article | 4 December 2008 Paper

Image parameter-based scatter bar optimization

Ryan Chou, Li-Tung Hsiao, H. Y. Liao, Jack Lin, Regina Shen, Jochen Schacht, Dyiann Chou, Srividya Jayaram, Pat LaCour

Proceedings Volume 7140, 71402E (2008) https://doi.org/10.1117/12.804707

KEYWORDS: Printing, Optical proximity correction, Model-based design, Critical dimension metrology, Lithography, Optimization (mathematics), Manufacturing, SRAF, Resolution enhancement technologies, Semiconducting wafers

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Scatter Bar (SBAR) insertion is a computationally expensive operation. SBAR are usually generated rule-based. SBAR rule tables dictate the insertion of SBAR with different SBAR width dependent on the width of the printable main features and the spacing between the main features and SBAR. Optimization of the SBAR rules drives manufactures to ever more complex SBAR tables which increase the runtime. In advanced process nodes, SBAR printing issues, missing SBAR due to clean-up problems and joining SBAR of different width together remain challenging. On the other hand, pixelized inversion methods may yield optimized SBAR solutions, especially in terms of SBAR placement for contact layers, but comes at the expense of significant computational effort and increased mask writing and inspection time. Since OPC changes the spacing between SBAR and main features, an accurate and optimized SBAR solution requires OPC and SBAR optimization to run interactively. This work focuses on both line/space and contact layers To ensure fast SBAR optimization, SBAR placement and SBAR width optimization are separated. SBAR of uniform width are placed fast driven by a simple rule-based table comprising only a single SBAR width. This intermediate SBAR layer is subject into a model-based approach, which fragments the SBAR layer based on proximity with respect to the main features or other SBAR, and assigns measurement sites to each SBAR fragment. A model is used to move each SBAR fragment inward or outward so that the image cut line shows a maximum SBAR intensity closer to a predefined SBAR printing threshold. While the main features are unchanged, several iterations are applied to converge the SBAR fragments. Keeping the SBAR fragments fixed, OPC is applied to the main features. Repeating these steps allows optimization of the SBAR width and the OPC simultaneously. Site based as well as contours based verification methods are applied to ensure that the SBAR printing margin has been significantly improved. The improved SBAR printing margin allows manufactures to apply more aggressive SBAR placement rules, which, in addition to the optimized SBAR width, helps to enlarge the depth of focus, therefore, widen the common process window of the lithography process.

Proceedings Article | 24 March 2008 Paper

A novel methodology for model-based OPC verification

Tengyen Huang, ChunCheng Liao, Ryan Chou, Hung-Yueh Liao, Jochen Schacht

Proceedings Volume 6922, 69222F (2008) https://doi.org/10.1117/12.772522

KEYWORDS: Optical proximity correction, Scanning electron microscopy, Process modeling, Data modeling, Semiconducting wafers, Lithography, Optical lithography, Calibration, Finite element methods, Model-based design

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Proceedings Article | 7 March 2008 Paper

Highly reliable detection and correction of pinched areas for high transmission phase shift mask

Chih Li Chen, Chun-Cheng Liao, Pin-Jan Chou, Chiang Lin Shih, Steven Shih

Proceedings Volume 6924, 692437 (2008) https://doi.org/10.1117/12.772499

KEYWORDS: Chromium, Photomasks, Optical lithography, Phase shifts, Data modeling, Resolution enhancement technologies, Optical proximity correction, Nanoimprint lithography, Solids, Manufacturing

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Showing 5 of 6 publications

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