Dr. Sadao Takabayashi Profile

Dr. Sadao Takabayashi

at Micron Technology Inc

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Author

Publications (5)

Proceedings Article | 10 April 2024 Presentation + Paper

Advanced FTIR optical modeling for hydrogen content measurements in 3D NAND cell nitride and amorphous carbon hard mask

Joshua Frederick, Youcheng Wang, Haodong Qiu, Eui Sang Song, Sadao Takabayashi, Izaak Williamson, Ryan Lucas, Zhuo Chen, Peter Wang, Benoit Revot, Hao Wang, Dan Engelhard

Proceedings Volume 12955, 129550H (2024) https://doi.org/10.1117/12.3010524

KEYWORDS: Hydrogen, FT-IR spectroscopy, Semiconducting wafers, Silicon nitride, Absorbance, Wafer bonding, Modeling, Amorphous carbon, Deconvolution, Chemical analysis

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Proceedings Article | 27 April 2023 Presentation + Paper

Characterization of asymmetries in 3D NAND memory devices

Jie Li, Shashank Srivastava, Joyce Li, Zhuo Chen, Petar Žuvela, Boyang Chor, Jinyu Deng, Haodong Qiu, YaChing Chang, Sadao Takabayashi, Xadric Yiew, Bo Hui Ng, Rohit Kothari, Dan Engelhard, Han Yang Tan

Proceedings Volume 12496, 124960F (2023) https://doi.org/10.1117/12.2658148

KEYWORDS: Education and training, Semiconducting wafers, Overlay metrology, Critical dimension metrology, Mueller matrices, 3D metrology, Data modeling, 3D modeling, Machine learning, Spectral response

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Proceedings Article | 27 April 2023 Presentation + Paper

Measurement of W-recess profile in advanced node 3D NAND device with IRCD technology utilizing a specialized design-rule compliant target

Nick Keller, Zhuo Chen, Peter Wang, Rostislav Grynko, Troy Ribaudo, G. Andrew Antonelli, Youcheng Wang, Joshua Frederick, Sadao Takabayashi, John Hauck, Dan Engelhard

Proceedings Volume 12496, 124961Z (2023) https://doi.org/10.1117/12.2657719

KEYWORDS: Simulations, Metals, Finite-difference time-domain method, 3D acquisition, 3D metrology, Semiconducting wafers, Etching, Electric fields, Dielectrics, Plasmonics

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Proceedings Article | 26 May 2022 Presentation + Paper

Novel inline on-device measurement of silicon nitride lateral recess post channel hole ACI with IRCD metrology

Nick Keller, Wenmei Ming, Zhuo Chen, G. Andrew Antonelli, Troy Ribaudo, Zhuan Liu, Sadao Takabayashi, John Hauck, Joshua Frederick, Dan Engelhard

Proceedings Volume 12053, 120530T (2022) https://doi.org/10.1117/12.2618035

KEYWORDS: Silicon, Etching, Metrology, Semiconducting wafers, Mid-IR, Diffractive optical elements, Silica, Scattering, Critical dimension metrology, Absorption

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Proceedings Article | 22 February 2021 Presentation + Paper

Ellipsometric critical dimension metrology employing mid-infrared wavelengths for high-aspect-ratio channel hole module etch processes

G. Andrew Antonelli, Nick Keller, Troy Ribaudo, Franklin Wong, Wenmei Ming, Hepeng Ding, Zhuo Chen, Ross Grynko, Ahmad Fumani, Zhuan Liu, Sadao Takabayashi, John Hauck, Joshua Frederick, Dan Engelhard, Bo Hui Ng, Biow Hiem Ong, Luey Chwan Liong

Proceedings Volume 11611, 116111O (2021) https://doi.org/10.1117/12.2583786

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