Mr. Si-Yeul Yoon Profile

Si-Yeul Yoon

at Photronics Inc

SPIE Involvement:

Author

Publications (7)

Proceedings Article | 28 August 2003 Paper

The feasibility study of thin Cr film for low process bias

Woong-Won Seo, Si-Yeul Yoon, Dong-Il Park, Eui-Sang Park, Jin-Min Kim, Sung-Mo Jeong, Sang-Soo Choi, Han-Sun Cha, K. Nam

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504181

KEYWORDS: Chromium, Etching, Critical dimension metrology, Photomasks, Dry etching, Backscatter, Thin films, Mask making, Electron beams, Equipment and services

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Proceedings Article | 27 December 2002 Paper

Preserving EAPSM phase and transmission in the clean process

Se-Jong Choi, Si-Yeul Yoon, Yong-Dae Kim, Hak-Weon Lee, Dae-Hong Kim, Si-Woo Lee, Dong-Heok Lee, Jin-Min Kim, Sang-Soo Choi, Soo Hong Jeong

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467480

KEYWORDS: Particles, Photomasks, Phase shifting, Chemistry, Glasses, Phase shifts, Semiconducting wafers, Chromium, Etching, Liquids

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Proceedings Article | 1 August 2002 Paper

Highly anisotropic etching of phase-shift masks using ICP of CF4-SF6-CHF3 gas mixtures

Se-Jong Choi, Han-Sun Cha, Si-Yeul Yoon, Yong-Dae Kim, Dong-Hyuk Lee, Jin-Min Kim, Jin-Su Kim, Dong-Soo Min, Pil-Jin Jang, Byung-Soo Chang, Hyuk-Joo Kwon, Boo-Yeon Choi, Sang-Soo Choi, Soo Hong Jeong

Proceedings Volume 4754, (2002) https://doi.org/10.1117/12.476984

KEYWORDS: Etching, Plasma, Photomasks, Phase shifts, Plasma etching, Gases, Chlorine, Scanning electron microscopy, Anisotropic etching, Surface roughness

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There is considerable interest in phase shift masks as a route to extending the resolution, contrast, and depth of focus of lithographic tools beyond what is achievable with the normal chrome mask technology. A problem that has so far hindered the introduction of phase shift masks has been the difficulty of phase and transmittance control when a phase shift mask is applied to practical use. Also, to apply phase shift layer (MoSiON), it remains that effects several critical mask parameters including sidewall slope, surface roughness, and critical dimension. For these reasons, this process requires a high degree of control of the etch process of shift layer. So in this paper, we described a technique for the fabrication of phase shift masks by etch rate of a MoSiON layer. Etching experiments of MoSiON were performed using different fluorinated gas mixtures. Four of them, CF₄/O₂/He, SF₆/O₂/He, CHF₃/O₂/He and Cl₂/CF₄/O2/He were chosen for high etch rate, sidewall slope, and surface morphology. Each added gases had a unique property on the etch rate, anisotropy, surface roughness and sidewall morphology. Result indicates that vertical slope and smooth surface are obtained using the Cl₂/ CF₄/O₂/He and SF₆/O₂/He mixture. With increasing O₂ flow rate to the SF₆/O₂/He Plasma and added Cl₂ gas to the CF₄/O₂/He Plasma, the MoSiON etching profile becomes anisotropic without undercutting and trench profile. It is probably due to both increasing etch rate and sidewall passivation of Cl₂ ion flux. When Cl₂ gas was added to the CF₄/O₂/He Plasma, the small addition of chlorine was enough to protect the exposed sidewall of the undercutting, therefore, higher flow rate of chlorine had to be added to protect the sidewall of the undercutting by forming a sidewall passivation layer. These results show that both increasing O₂ flow rate to the SF₆/O₂/He Plasma and the addition of Cl₂ to the CF₄/O₂/He plasma are necessary in order to achieve a vertical profile and a smooth surface morphology.

Proceedings Article | 1 August 2002 Paper

Etching selectivity and surface profile of attenuated phase-shifting mask using CF4/O2/He inductively coupled plasma (ICP)

Si-Yeul Yoon, Se-Jong Choi, Yong-Dae Kim, Dong-Hyuk Lee, Han-Sun Cha, Jin-Min Kim, Sang-Soo Choi, Soo Hong Jeong

Proceedings Volume 4754, (2002) https://doi.org/10.1117/12.476952

KEYWORDS: Quartz, Etching, Plasma, Scanning electron microscopy, Phase shifts, Photomasks, Phase shifting, Dry etching, Surface roughness, Silicon

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Proceedings Article | 11 March 2002 Paper

Optimization of alternating phase shifting mask structure

Han-Sun Cha, Se-Jong Choi, Si-Yeul Yoon, Sung-Mo Jung, Sang-Soo Choi, Soo-Hong Jeong

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458265

KEYWORDS: Etching, Photomasks, Phase shifts, Lithography, Semiconducting wafers, Phase shifting, Critical dimension metrology, Transmittance, Cadmium, Deep ultraviolet

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Proceedings Article | 11 March 2002 Paper

Evaluation of various alternating phase shifting mask processes for KrF lithography

Si-Yeul Yoon, Han-Sun Cha, Se-Jong Choi, Sung-Mo Jung, Sang-Soo Choi, Soo-Hong Jeong

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458266

KEYWORDS: Phase shifts, Photomasks, Etching, Transmittance, Image processing, Dry etching, Critical dimension metrology, Lithography, Phase shifting, Binary data

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Proceedings Article | 11 March 2002 Paper

Dry etching characteristics of attenuated phase-shifting masks using Cl2/CF4/O2/He plasmas

Se-Jong Choi, Han-Sun Cha, Si-Yeul Yoon, Sung-Mo Jung, Sang-Soo Choi, Soo-Hong Jeong

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458335

KEYWORDS: Etching, Chlorine, Plasmas, Phase shifts, Photomasks, Ions, Chromium, Dry etching, Surface roughness, Anisotropic etching

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Showing 5 of 7 publications

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