Mr. Woon-Hyuk Choi Profile

Woon-Hyuk Choi

Senior Engineer at SAMSUNG Electronics Co Ltd

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Publications (6)

Proceedings Article | 28 April 2023 Presentation + Paper

Unsupervised ML classification driven process model coverage check

SeungWon Song, Seokyoon Jeong, Sangwoo Park, Jungkee Choi, WoonHyuk Choi, No-young Chung, Seongtae Jeong, Fan Jiang, Liang Cao, Le Hong, Junhyoung Park, Doohwan Kwak, Jongwon Lee, Harin Kim, Jiyoung Lee

Proceedings Volume 12495, 1249518 (2023) https://doi.org/10.1117/12.2658322

KEYWORDS: Data modeling, Process modeling, Machine learning, Optical proximity correction, Statistical modeling, Calibration, Instrument modeling, Metrology, Design and modelling, Resolution enhancement technologies

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Proceedings Article | 15 March 2012 Open Access

Yield enhancement with DFM

Seung Weon Paek, Jae Hyun Kang, Naya Ha, Byung-Moo Kim, Dae-Hyun Jang, Junsu Jeon, DaeWook Kim, Kun Young Chung, Sung-eun Yu, Joo Hyun Park, SangMin Bae, DongSup Song, WooYoung Noh, YoungDuck Kim, HyunSeok Song, HungBok Choi, Kee Sup Kim, Kyu-Myung Choi, Woonhyuk Choi, JoongWon Jeon, JinWoo Lee, Ki-Su Kim, SeongHo Park, No-Young Chung, KangDuck Lee, YoungKi Hong, BongSeok Kim

Proceedings Volume 8327, 832704 (2012) https://doi.org/10.1117/12.920029

KEYWORDS: Design for manufacturing, Silicon, Polishing, Optical proximity correction, Back end of line, Metals, Failure analysis, Yield improvement, Logic, Manufacturing

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Proceedings Article | 4 March 2010 Paper

Optical proximity correction enhancement by using model based fragmentation approaches

Young-Seok Woo, Woon-Hyuk Choi, Beom-Seok Seo, Yoo-Hyon Kim, Vladislav Liubich, Shady Abdelwahed, Juhwan Kim, James Word, Jong-Won Lee

Proceedings Volume 7640, 76401F (2010) https://doi.org/10.1117/12.848447

KEYWORDS: Optical proximity correction, Lithography, Optical lithography, Critical dimension metrology, Bridges, Resolution enhancement technologies, Semiconducting wafers, Lithographic illumination, Tolerancing, Computer simulations

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Proceedings Article | 7 March 2008 Paper

Evaluating the accuracy of a calibrated rigorous physical resist model under various process and illumination conditions

Stewart Robertson, Byung-Sung Kim, Woon-Hyuk Choi, Yoo-Hyon Kim, John Biafore, Mark Smith

Proceedings Volume 6924, 692411 (2008) https://doi.org/10.1117/12.772766

KEYWORDS: Calibration, Data modeling, Photoresist processing, Semiconducting wafers, Critical dimension metrology, Photomasks, Error analysis, Process modeling, Computer simulations, Wafer-level optics

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Proceedings Article | 30 October 2007 Paper

The improvement of OPC accuracy and stability by the model parameters' analysis and optimization

No-Young Chung, Woon-Hyuk Choi, Sung-Ho Lee, Sung-Il Kim, Sun-Yong Lee

Proceedings Volume 6730, 67302J (2007) https://doi.org/10.1117/12.746446

KEYWORDS: Optical proximity correction, Data modeling, Semiconducting wafers, Polarization, Databases, Wafer-level optics, Statistical modeling, System on a chip, Optimization (mathematics), Instrument modeling

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The OPC model is very critical in the sub 45nm device because the Critical Dimension Uniformity (CDU) is so tight to meet the device performance and the process window latitude for the production level. The OPC model is generally composed of an optical model and a resist model. Each of them has physical terms to be calculated without any wafer data and empirical terms to be fitted with real wafer data to make the optical modeling and the resist modeling. Empirical terms are usually related to the OPC accuracy, but are likely to be overestimated with the wafer data and so those terms can deteriorate OPC stability in case of being overestimated by a small cost function. Several physical terms have been used with ideal value in the optical property and even weren't be considered because those parameters didn't give a critical impact on the OPC accuracy, but these parameters become necessary to be applied to the OPC modeling at the low k1 process. Currently, real optic parameter instead of ideal optical parameter like the laser bandwidth, source map, pupil polarization including the phase and intensity difference start to be measured and those real measured value are used for the OPC modeling. These measured values can improve the model accuracy and stability. In the other hand these parameters can make the OPC model to overcorrect the process proximity errors without careful handling. The laser bandwidth, source map, pupil polarization, and focus centering for the optical modeling are analyzed and the sample data weight scheme and resist model terms are investigated, too. The image blurring by actual laser bandwidth in the exposure system is modeled and the modeling result shows that the extraction of the 2D patterns is necessary to get a reasonable result due to the 2D patterns' measurement noise in the SEM. The source map data from the exposure machine shows lots of horizontal and vertical intensity difference and this phenomenon must come from the measurement noise because this huge intensity difference can't be caused by the scanner system with respect to the X-Y intensity difference specification in the scanner. Therefore this source map should be well organized for the OPC modeling and a manipulated source map improves the horizontal and vertical mask bias and even OPC convergence. The focus parameter which is critical for the process window OPC and ORC should be matched to the tilted Bossung plot which is caused by uncorrectable aberration to predict the CD change in the through focus with a new devised method. Pupil polarization data can be applied into the OPC modeling and this parameter is also used for the unpolarized source and the polarized source and specially this parameter helps Apodization loss to be 0 and is evaluated for the effect into the modeling. With the analysis and optimization about the model parameters the robust model is achieved in the sub 45nm device node.

Proceedings Article | 21 March 2007 Paper

Lithography enhanced manufacturability analysis by using multilevel simulated contours

Beom-Seok Seo, Woon-Hyuk Choi, Jong-Woon Park, Soung-Su Woo, Sung-Ho Lee

Proceedings Volume 6521, 65210Y (2007) https://doi.org/10.1117/12.711825

KEYWORDS: Optical proximity correction, Diffusion, Lithography, Resolution enhancement technologies, Manufacturing, Critical dimension metrology, Logic, Design for manufacturability, Photomasks, Electroluminescence

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