Multi-wavelength continuous-bias DBO metrology for improved ADI process-robustness

Jungmin Lee; Inbeom Lim; Byeong Seon Park; Changyeon Lee; Mincheol Kwak; Jeongjin Lee; Seung Yoon Lee; Chan Hwang; Jay Mummery; Bruno Gregorio Almeida; Han-Gyeol Park; Mi-Yeon Baek; Kemal Dahha; Ki-Youn Lee; Se-Hui Lee; Arno van Leest; Thao Nguyen; Marc Noot; Stefan Smith-Meerman; Koen van Witteveen; Jong-Hyuk Yim; Olger Zwier

doi:10.1117/12.3012950

9 April 2024 Multi-wavelength continuous-bias DBO metrology for improved ADI process-robustness

Jungmin Lee, Inbeom Lim, Byeong Seon Park, Changyeon Lee, Mincheol Kwak, Jeongjin Lee, Seung Yoon Lee, Chan Hwang, Jay Mummery, Bruno Gregorio Almeida, Han-Gyeol Park, Mi-Yeon Baek, Kemal Dahha, Ki-Youn Lee, Se-Hui Lee, Arno van Leest, Thao Nguyen, Marc Noot, Stefan Smith-Meerman, Koen van Witteveen, Jong-Hyuk Yim, Olger Zwier

Author Affiliations +

Proceedings Volume 12955, Metrology, Inspection, and Process Control XXXVIII; 129553P (2024) https://doi.org/10.1117/12.3012950
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Conference Poster

Abstract

Multi-wavelength (MWL) micro diffraction-based overlay (μDBO) is a prominent method for after-develop inspection (ADI) overlay measurements, which is favorable for accuracy and robustness. Continuous-bias DBO (cDBO) is expected to offer robustness improvements against stack variation, asymmetry, and imbalance. In this paper, dual-WL (DWL) cDBO profiles were evaluated to secure the advantages of both of MWL and cDBO applications. The metrics used to evaluate accuracy and robustness of ADI overlay measurements are residual, dynamic precision (DP), and wafer-to-wafer variation of the difference between ADI and after-etch inspection overlay. 70% of DWL profiles had improvements in their residual values comparing with their single-WL (SWL) constituents on Samsung R&D wafers in layer A. On layer B, the best DWL cDBO profiles showed around 5% improved residuals comparing with its SWL constituents. DWL cDBO showed around 30% averaged improved DP compared with SWL counterparts. DP improvements of MWL cDBO are following the expected DP improvements, based on the signal-to-noise ratio improvement with increasing number of signals. Residual improvement with increasing number of WLs is different from the DP improvement, and the best DWL residual improvement is higher than that of SWL measurements with noise reduction techniques applied. This shows that the residual improvement cannot be attributed to the increased number of acquisitions, and that it could be an innate advantage of MWL cDBO.

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Jungmin Lee, Inbeom Lim, Byeong Seon Park, Changyeon Lee, Mincheol Kwak, Jeongjin Lee, Seung Yoon Lee, Chan Hwang, Jay Mummery, Bruno Gregorio Almeida, Han-Gyeol Park, Mi-Yeon Baek, Kemal Dahha, Ki-Youn Lee, Se-Hui Lee, Arno van Leest, Thao Nguyen, Marc Noot, Stefan Smith-Meerman, Koen van Witteveen, Jong-Hyuk Yim, and Olger Zwier "Multi-wavelength continuous-bias DBO metrology for improved ADI process-robustness", Proc. SPIE 12955, Metrology, Inspection, and Process Control XXXVIII, 129553P (9 April 2024); https://doi.org/10.1117/12.3012950

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