Immersion defect reduction, part II: the formation mechanism and reduction of patterned defects

Lin-Hung Shiu; Fu-Jye Liang; Hsing Chang; Chun-Kuang Chen; Li-Jui Chen; Tsai-Sheng Gau; Burn J. Lin

doi:10.1117/12.712527

26 March 2007 Immersion defect reduction, part II: the formation mechanism and reduction of patterned defects

Lin-Hung Shiu, Fu-Jye Liang, Hsing Chang, Chun-Kuang Chen, Li-Jui Chen, Tsai-Sheng Gau, Burn J. Lin

Proceedings Volume 6520, Optical Microlithography XX; 652012 (2007) https://doi.org/10.1117/12.712527
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

193-nm immersion lithography is the only choice for the 45-nm logical node at 120-nm half pitch and extendable to 32- and 22-nm nodes. The defect problem is one of the critical issues in immersion technology. In this paper, we provided a methodology to trace the defect source from optical microscope images to its SEM counterparts after exposure. An optimized exposure routing was also proposed to reduce printing defects. The average defect count was reduced from 19.7 to 4.8 ea/wafer.

Citation Download Citation

Lin-Hung Shiu, Fu-Jye Liang, Hsing Chang, Chun-Kuang Chen, Li-Jui Chen, Tsai-Sheng Gau, and Burn J. Lin "Immersion defect reduction, part II: the formation mechanism and reduction of patterned defects", Proc. SPIE 6520, Optical Microlithography XX, 652012 (26 March 2007); https://doi.org/10.1117/12.712527

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