Performance results of laser-produced plasma test and prototype light sources for EUV lithography

Norbert R. Böwering; Igor V. Fomenkov; David C. Brandt; Alexander N. Bykanov; Alexander I. Ershov; William N. Partlo; Dave W. Myers; Nigel R. Farrar; Georgiy O. Vaschenko; Oleh V. Khodykin; Jerzy R. Hoffman; Christopher P. Chrobak; Shailendra N. Srivastava; Imtiaz Ahmad; Chirag Rajyaguru; Daniel J. Golich; David A. Vidusek; Silvia De Dea; Richard R. Hou

doi:10.1117/1.3224942

1 October 2009 Performance results of laser-produced plasma test and prototype light sources for EUV lithography

Norbert R. Böwering, Igor V. Fomenkov, David C. Brandt, Alexander N. Bykanov, Alexander I. Ershov, William N. Partlo, Dave W. Myers, Nigel R. Farrar, Georgiy O. Vaschenko, Oleh V. Khodykin, Jerzy R. Hoffman, Christopher P. Chrobak, Shailendra N. Srivastava, Imtiaz Ahmad, Chirag Rajyaguru, Daniel J. Golich, David A. Vidusek, Silvia De Dea, Richard R. Hou

Author Affiliations +

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 8, Issue 4, 041504 (October 2009). https://doi.org/10.1117/1.3224942

Abstract

Improved performance and specific results are reported for several test and prototype extreme ultraviolet (EUV) light sources developed for next-generation lithography. High repetition rate and high-power CO₂ laser-produced plasma sources operating on tin droplet targets are described. Details of laser architecture, source chambers and system operation are given. Stable output power, efficient light collection, and clean EUV transmission could be achieved for hours of operation. We review progress during integration of light sources with collector mirrors reaching EUV power levels at intermediate focus of 60 W and 45 W, respectively, with duty cycles of 25% and 40%. Far-field EUV images of the collected light were recorded to monitor the source output performance during extended tests of collector longevity and debris protection with system operation time exceeding 50 h. Development results on EUV spectra, out-of-band (OOB) radiation, and ion debris obtained with dedicated metrology setups are also described. Angle-resolved measurements with ion energy analyzer and Faraday cups reveal the contributions of individual ion charge states in related spectra. Our laser-produced EUV light source technology has now reached a level of maturity in full integration where prototype sources can be delivered and pilot line introduction can be prepared.

©(2009) Society of Photo-Optical Instrumentation Engineers (SPIE)

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Norbert R. Böwering, Igor V. Fomenkov, David C. Brandt, Alexander N. Bykanov, Alexander I. Ershov, William N. Partlo, Dave W. Myers, Nigel R. Farrar, Georgiy O. Vaschenko, Oleh V. Khodykin, Jerzy R. Hoffman, Christopher P. Chrobak, Shailendra N. Srivastava, Imtiaz Ahmad, Chirag Rajyaguru, Daniel J. Golich, David A. Vidusek, Silvia De Dea, and Richard R. Hou "Performance results of laser-produced plasma test and prototype light sources for EUV lithography," Journal of Micro/Nanolithography, MEMS, and MOEMS 8(4), 041504 (1 October 2009). https://doi.org/10.1117/1.3224942

Published: 1 October 2009

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