Dr. Arosha W. Goonesekera Profile

Dr. Arosha W. Goonesekera

Application Engineering Manager at Lasertec USA

SPIE Involvement:

Conference Program Committee | Author

Publications (15)

Proceedings Article | 21 November 2023 Presentation + Paper

Presentation + Paper

Die-to-database inspections of optical patterned masks

Christopher Wieland, Kristy Kormondy, Annelise Beck, Britain Smith, Firoz Ghadiali, Jun Kim, Frank Abboud, Tetsuya Sendoda, Naonari Kondo, Tomohiro Imahoko, Jeoung Kim, Chikato Kaga, Arosha Goonesekera, Wonil Cho, Sankaranarayanan Paninjath, Saikiran Madhusudhan, Prakash Deep, Shivam Nln, Sasidhara Reddy, Ranganadh Peesapati

Proceedings Volume 12751, 1275105 (2023) https://doi.org/10.1117/12.2688267

KEYWORDS: Inspection, Defect inspection, Photomasks, Optical inspection, Semiconducting wafers, Printing, Image processing, Detection and tracking algorithms, Defect detection

Read Abstract +

Proceedings Article | 21 November 2023 Presentation + Paper

Presentation + Paper

Actinic pattern mask inspection for high-NA EUV lithography

Toshiyuki Todoroki, Ko Gondaira, Arosha Goonesekera, Hiroki Miyai

Proceedings Volume 12751, 1275102 (2023) https://doi.org/10.1117/12.2686350

KEYWORDS: Inspection, Extreme ultraviolet lithography, Extreme ultraviolet, Lithography, Laser development, Defect detection, Actinic inspection, Photomasks, Phase shifts, Objectives

Read Abstract +

Lasertec released the actinic patterned mask inspection (APMI) system ACTIS in 2019 and has since been providing it as an actinic inspection solution for EUV mask inspection. ACTIS performs high-resolution, high-throughput inspection of EUV photomasks. It detects all types of mask defects making lithographic impact because it uses the wavelength of light used in EUV lithography as its light source. While actinic inspection is typically known for its capability to detect phase defects, it is also indispensable for detecting phase shift defects on EUV PSM. ACTIS performs both die-to-die (D2D) and die-to-database (DDB) inspections and can inspect all types of EUV masks including multi-die masks and single-die masks. High-NA lithography is expected to be used for the EUV process at the technology nodes of N2 and beyond. The nextgeneration ACTIS has an objective mirror with a higher NA. This makes it possible to have different resolution characteristics in the X and Y directions, enabling it to meet the sensitivity required to detect defects in the anamorphic patterns used for high-NA EUV lithography. In addition, as design nodes become smaller, curvilinear masks will be adopted to improve resolution characteristics on wafers, which will require handling a large amount of design data per mask. For DDB inspection, which generates reference images using sophisticated, high-speed computer processing, the inspection of curvilinear masks is a major challenge. In DDB inspection, curve masks generate large amounts of data because complex curve shapes are approximated using polygons with a large number of vertices. It needs more computing resources and leads to a longer processing time. The reference images generated for inspection must be more intricate. APMI is necessary for pattern mask qualification of EUV masks with pellicles. However, the high sensitivity inspection of masks with EUV pellicles was prevented by the incident power limitation by heat load on the pellicle. Therefore, we have developed a new EUV light source that can minimize the thermal load. This paper describes the development results of the next-generation ACTIS for high-NA EUV lithography, the DDB inspection capability of ACTIS for curvilinear masks, as well as the requirements for APMI light sources, which differ from those of EUV scanner light sources, and the development result of Lasertec's EUV light source "URASHIMA".

Proceedings Article | 1 December 2022 Paper

Paper

Mask inspection technologies for expanding EUV lithography

Arosha Goonesekera, Hiroki Miyai, Tsunehito Kohyama, Toshiyuki Todoroki

Proceedings Volume 12293, 1229302 (2022) https://doi.org/10.1117/12.2643295

KEYWORDS: Photomasks, Inspection, Extreme ultraviolet, Pellicles, Semiconducting wafers, Extreme ultraviolet lithography, Defect detection, Printing, EUV optics, Optical inspection

Read Abstract +

Proceedings Article | 16 October 2017 Paper

Paper

Automated defect disposition with AIMS AutoAnalysis

Guy Russell, David Jenkins, Arosha Goonesekera, Kay Dornbusch, Vahagn Sargsyan, Hendrik Zachmann, Ute Buttgereit

Proceedings Volume 10451, 1045113 (2017) https://doi.org/10.1117/12.2281884

KEYWORDS: Defect detection, Defect inspection, Critical dimension metrology, Image analysis, Image processing, Statistical analysis, Tolerancing, Photomasks, Manufacturing, Reliability

Read Abstract +

Proceedings Article | 14 October 2011 Paper

Paper

A study of closed-loop application: WLCD-CDC for 32nm and beyond reticles

Arosha Goonesekera, Ute Buttgereit, Thomas Thaler, Erez Graitzer

Proceedings Volume 8166, 816619 (2011) https://doi.org/10.1117/12.898892

KEYWORDS: Critical dimension metrology, Semiconducting wafers, Signal attenuation, Photomasks, Logic, Scanners, Reticles, 193nm lithography, Process control, Cadmium

Read Abstract +

Optical lithography stays at 193nm with a numerical aperture of 1.35 for several more years before moving to EUV lithography. Utilization of 193nm lithography for 32nm and beyond forces the mask maker to produce complex mask designs and tighter lithography specifications which in turn make process control more important than ever. High yield with regards to chip production requires accurate process control. Critical Dimension Uniformity (CDU) is one of the key parameters necessary to assure good performance and reliable functionality of any integrated circuit. There are different contributors which impact the total wafer CDU: mask CD uniformity, resist process, scanner and lens fingerprint, wafer topography, etc. In this study the newly developed wafer level CD metrology tool WLCD of Carl Zeiss SMS is utilized for CDU measurements in conjunction with the CDC tool from Carl Zeiss SMS which provides CD uniformity correction. The WLCD measures CD based on proven aerial imaging technology. The CDC utilizes an ultrafast femto-second laser to write intra-volume shading elements (Shade-In Elements^TM) inside the bulk material of the mask. By adjusting the density of the shading elements, the light transmission through the mask is locally changed in a manner that improves wafer CDU when the corrected mask is printed. The objective of this study is to evaluate the usage of these two tools in a closed loop process to optimize CDU of the mask before leaving the mask shop and to ensure improved intra-field CDU at wafer level. Main focus of the study is to investigate the correlation of applied attenuation by CDC and the resulting CD change, the impact of CDC process on CD linearity behavior and the correlation of WLCD data and wafer data. Logic and SRAM cells with features having designed line CD's at wafer level, ranging from 27nm to 42nm have been used for the study. The investigation provides evidence that the applied attenuation by CDC shows a linear correlation to CD change at wafer level measured with WLCD. Additionally, WLCD data shows that the CDC application does not impact the CD linearity for the tested feature range. The WLCD measurement data in turn show an excellent correlation to wafer print CD data indicating cost effective use case of closed loop WLCD/CDC application.

Proceedings Article | 11 May 2009 Paper

Paper

TeraScanXR: a high sensitivity and throughput photomask inspection system

Bo Mu, Aditya Dayal, Arosha Goonesekera, Phillip Lim, Chunlin Chen, Po Liu, Kevin Yeung, Becky Pinto, Bill Broadbent, Gregg Inderhees

Proceedings Volume 7379, 73792B (2009) https://doi.org/10.1117/12.824325

KEYWORDS: Inspection, Reticles, Sensors, Databases, Photomasks, Detection and tracking algorithms, SRAF, Logic, Imaging systems, Critical dimension metrology

Read Abstract +

Proceedings Article | 24 March 2009 Paper

Paper

Results from prototype die-to-database reticle inspection system

Bo Mu, Aditya Dayal, Bill Broadbent, Phillip Lim, Arosha Goonesekera, Chunlin Chen, Kevin Yeung, Becky Pinto

Proceedings Volume 7272, 72723O (2009) https://doi.org/10.1117/12.815574

KEYWORDS: Prototyping, Inspection, Reticles, Sensors, Detection and tracking algorithms, Imaging systems, Logic, SRAF, Signal to noise ratio, Digital breast tomosynthesis

Read Abstract +

Proceedings Article | 17 October 2008 Paper

Paper

Results from the KLA-Tencor TeraScanXR reticle inspection tool

Aditya Dayal, Bo Mu, Venkat Iyer, Phillip Lim, Arosha Goonesekera, Bill Broadbent

Proceedings Volume 7122, 71223G (2008) https://doi.org/10.1117/12.801831

KEYWORDS: Inspection, Reticles, Line edge roughness, Signal to noise ratio, Sensors, Detection and tracking algorithms, Spatial frequencies, Modulation transfer functions, Image processing, Defect detection

Read Abstract +

Proceedings Article | 17 October 2008 Paper

Paper

Wafer plane inspection evaluated for photomask production

Emily Gallagher, Karen Badger, Mark Lawliss, Yutaka Kodera, Jaione Tirapu Azpiroz, Song Pang, Hongqin Zhang, Eugenia Eugenieva, Chris Clifford, Arosha Goonesekera, Yibin Tian

Proceedings Volume 7122, 71221B (2008) https://doi.org/10.1117/12.801945

KEYWORDS: Photomasks, Inspection, Semiconducting wafers, Finite-difference time-domain method, Wafer inspection, Manufacturing, Printing, Lithography, Reticles, Optical proximity correction

Read Abstract +

Proceedings Article | 19 May 2008 Paper

Paper

Results of new CD detection capability on advanced reticles

Arosha Goonesekera, Heiko Schmalfuss, Isaac Lee, Chun Guan, Aditya Dayal, Thomas Schulmeyer, Jan Heumann

Proceedings Volume 7028, 70282L (2008) https://doi.org/10.1117/12.793091

KEYWORDS: Inspection, Reticles, Critical dimension metrology, Sensors, Defect detection, Photomasks, Detection and tracking algorithms, Opacity, Resolution enhancement technologies, Image processing

Read Abstract +

Proceedings Article | 19 May 2008 Paper

Paper

Thin-line de-sense capability for database mode inspections with KLA-Tencor TeraScanHR

Arosha Goonesekera, Isaac Lee, Bo Mu, Aditya Dayal

Proceedings Volume 7028, 70282J (2008) https://doi.org/10.1117/12.793089

KEYWORDS: SRAF, Inspection, Databases, Reticles, Photomasks, Optical proximity correction, Sensors, Resolution enhancement technologies, Photoresist materials, Lithography

Read Abstract +

Proceedings Article | 23 October 1998 Paper

Paper

Influence of dipole moment of the transport agents on the carrier mobility in photorefractive polymers

Arosha Goonesekera, Stephen Ducharme, James Takacs

Proceedings Volume 3471, (1998) https://doi.org/10.1117/12.328159

KEYWORDS: Electron transport, Polymers, Photorefractive polymers, Chromophores, Systems modeling, Molecules, Electro optic polymers, Electro optical modeling, Analytical research, Complex systems

Read Abstract +

Proceedings Article | 9 October 1997 Paper

Paper

Effect of polar additives on hole mobilities in photorefractive polymers

Arosha Goonesekera, Stephen Ducharme, James Takacs

Proceedings Volume 3144, (1997) https://doi.org/10.1117/12.290240

KEYWORDS: Polymers, Photorefractive polymers, Chromophores, Electro optical modeling, Molecules, Systems modeling, Electro optics, Analytical research, Capacitance, Picosecond phenomena

Read Abstract +

Proceedings Article | 15 October 1996 Paper

Paper

Hole mobilities in a photorefractive polymer

Arosha Goonesekera, Stephen Ducharme, James Takacs, Lei Zhang

Proceedings Volume 2850, (1996) https://doi.org/10.1117/12.254249

KEYWORDS: Polymers, Photorefractive polymers, Temperature metrology, Molecules, Glasses, Composites, Analytical research, Electrodes, Electro optical modeling, Electro optics

Read Abstract +

Proceedings Article | 23 August 1995 Paper

Paper

Role of photoconductivity in molecularly doped photorefractive polymer

Arosha Goonesekera, Martin Liphardt, Stephen Ducharme, James Takacs, Lei Zhang

Proceedings Volume 2526, (1995) https://doi.org/10.1117/12.217309

KEYWORDS: Polymers, Photorefractive polymers, Temperature metrology, Electro optical modeling, Glasses, Quantum efficiency, Absorption, Electro optics, Analytical research, Crystals

Read Abstract +

Showing 5 of 15 publications

Conference Committee Involvement (2)

Photomask Technology 2024

29 September 2024 | Monterey, California, United States

Photomask Technology 2023

2 October 2023 | Monterey, California, United States

SIGN IN TO:

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Advertisement

Advertisement