Dr. Chris H. Clifford Profile

Dr. Chris H. Clifford

Software Development Manager at Siemens EDA

SPIE Involvement:

Editorial Board Member: Journal of Micro/Nanopatterning, Materials, and Metrology | Editorial Board Member: Journal of Micro/Nanolithography, MEMS, and MOEMS | Author

Area of Expertise:

Computational Lithography

Websites:

Company Website

Profile Summary

I am working as a developer in the Calibre division at Siemens ( formerly Mentor Graphics ) in Fremont, CA.

Publications (32)

Proceedings Article | 10 April 2024 Poster + Paper

Poster + Paper

The effect of edge placement error on deformity and roughness calculation

Mohamed Abaidi, Ir Kusnadi, Stewart Wu, Lina Mahmoud, Loic Schneider, Borislava Dimitrova, Satya Sriram, Chris Clifford

Proceedings Volume 12955, 1295538 (2024) https://doi.org/10.1117/12.3010845

KEYWORDS: Contour modeling, Optical proximity correction, Contour extraction, Scanning electron microscopy, Deformation, Edge roughness, Calibration, Spectral density, Performance modeling, SRAF

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Proceedings Article | 20 March 2019 Presentation + Paper

Presentation + Paper

Process window-based feature and die failure rate prediction

John Sturtevant, Lianghong Yin, Young Chang Kim, Shumay Shang, Andrew Burbine, Chris Clifford, Kostas Adam

Proceedings Volume 10962, 109620B (2019) https://doi.org/10.1117/12.2516101

KEYWORDS: Failure analysis, Critical dimension metrology, Lithography, Logic, Manufacturing, Photomasks, Error analysis, Stochastic processes, Visualization, Optical proximity correction

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Proceedings Article | 19 March 2018 Presentation + Paper

Presentation + Paper

Model based high NA anamorphic EUV RET

Fan Jiang, Vincent Wiaux, Germain Fenger, Chris Clifford, Vlad Liubich, Eric Hendrickx

Proceedings Volume 10583, 105830P (2018) https://doi.org/10.1117/12.2299668

KEYWORDS: Optical proximity correction, Photomasks, SRAF, Extreme ultraviolet, Image quality, Extreme ultraviolet lithography, Semiconducting wafers, Resolution enhancement technologies

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With the announcement of the extension of the Extreme Ultraviolet (EUV) roadmap to a high NA lithography tool that utilizes anamorphic optics design, an investigation of design tradeoffs unique to the imaging of anamorphic lithography tool is shown. An anamorphic optical proximity correction (OPC) solution has been developed that models fully the EUV near field electromagnetic effects and the anamorphic imaging using the Domain Decomposition Method (DDM). Clips of imec representative for the N3 logic node were used to demonstrate the OPC solutions on critical layers that will benefit from the increased contrast at high NA using anamorphic imaging. However, unlike isomorphic case, from wafer perspective, OPC needs to treat x and y differently. In the paper, we show a design trade-off seen unique to Anamorphic EUV, namely that using a mask rule of 48nm (mask scale), approaching current state of the art, limitations are observed in the available correction that can be applied to the mask. The metal pattern has a pitch of 24nm and CD of 12nm. During OPC, the correction of the metal lines oriented vertically are being limited by the mask rule of 12nm 1X. The horizontally oriented lines do not suffer from this mask rule limitation as the correction is allowed to go to 6nm 1X. For this example, the masks rules will need to be more aggressive to allow complete correction, or design rules and wafer processes (wafer rotation) would need to be created that utilize the orientation that can image more aggressive features. When considering VIA or block level correction, aggressive polygon corner to corner designs can be handled with various solutions, including applying a 45 degree chop. Multiple solutions are discussed with the metrics of edge placement error (EPE) and Process Variation Bands (PVBands), together with all the mask constrains. Noted in anamorphic OPC, the 45 degree chop is maintained at the mask level to meet mask manufacturing constraints, but results in skewed angle edge in wafer level correction. In this paper, we used both contact (Via/block) patterns and metal patterns for OPC practice. By comparing the EPE of horizontal and vertical patterns with a fixed mask rule check (MRC), and the PVBand, we focus on the challenges and the solutions of OPC with anamorphic High-NA lens.

Proceedings Article | 16 October 2017 Paper

Paper

Optical proximity correction for anamorphic extreme ultraviolet lithography

Chris Clifford, Michael Lam, Ananthan Raghunathan, Fan Jiang, Germain Fenger, Kostas Adam

Proceedings Volume 10450, 104500V (2017) https://doi.org/10.1117/12.2280548

KEYWORDS: Photomasks, Semiconducting wafers, Optical proximity correction, Finite-difference time-domain method, Wafer-level optics, Systems modeling, Extreme ultraviolet lithography, Projection systems, Scanners, Electromagnetism

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Proceedings Article | 16 October 2017 Paper

Paper

Edge placement errors in EUV from aberration variation

Ananthan Raghunathan, Germain Fenger, Michael Lam, Chris Clifford, Kostas Adam, John Sturtevant

Proceedings Volume 10451, 104510W (2017) https://doi.org/10.1117/12.2280609

KEYWORDS: Optical proximity correction, Wavefronts, Extreme ultraviolet, Scanners, Photomasks, Error analysis, Extreme ultraviolet lithography, Manufacturing, 3D modeling, Tolerancing

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With several foundries/IDMs committed to using EUV to manufacture devices at the 7 nm and 5 nm nodes, the success of EUVL will depend critically on the ability of manufacturers to meet extremely tight edge placement error (EPE) budgets. EPE is affected by many factors and it becomes important to identify and address all systematic sources of edge placement error. One major source of this error, which hasn’t been given a lot of attention, continues to be the magnitude and variation of aberrations across the exposure field and between different scanners. EUV scanners are known to have significantly higher level of aberrations than DUV scanners due to the substantial drop in wavelength requiring tighter specifications on lens roughness, as well as a move to reflective optics producing double pass impact of surface roughness.

While the EPE from variation in aberrations across the exposure field is correctable in OPC software, there are no known ways to address tool-to-tool aberration variation. Given that foundries are expected to have multiple EUV tools for high volume manufacturing, the degree of tool-matching between different machines is expected to play a critical role to the success of EUV. This work seeks to further the study by quantifying the simulated edge placement error on realistic 7 nm / 5 nm node designs resulting from a fleet consisting of multiple EUV tools, under the assumption of single OPC model / mask for multiple tools and whether such assumptions are valid. Given the importance of tool-to-tool aberration matching in EUVL, this study investigates the amount of variation in tool-to-tool aberration that can be tolerated before foundries must consider tool dedicated OPC mask sets. This study statistically analyzes different metrics such as EPEs, image shifts and worst case excursions to understand which single tool in the fleet should be best used in model calibration to generate the OPC mask shapes. In addition, an effort to rank relative quality of the verification solutions is investigated, to be used to tool allocation.

Proceedings Article | 28 September 2017 Paper

Paper

Aerial image metrology for OPC modeling and mask qualification

Ao Chen, Yee Mei Foong, Thomas Thaler, Ute Buttgereit, Angeline Chung, Andrew Burbine, John Sturtevant, Chris Clifford, Kostas Adam, Peter De Bisschop

Proceedings Volume 10446, 104460V (2017) https://doi.org/10.1117/12.2281886

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SPIE Journal Paper | 19 August 2017

Optical proximity correction for anamorphic extreme ultraviolet lithography

Chris Clifford, Michael Lam, Ananthan Raghunathan, Fan Jiang, Germain Fenger, Kostas Adam

JM3, Vol. 16, Issue 04, 041004, (August 2017) https://doi.org/10.1117/12.10.1117/1.JMM.16.4.041004

KEYWORDS: Photomasks, Semiconducting wafers, Optical proximity correction, Wafer-level optics, Finite-difference time-domain method, Extreme ultraviolet, Systems modeling, Scanners, Extreme ultraviolet lithography, Projection systems

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SPIE Journal Paper | 25 July 2017

Enabling full-field physics-based optical proximity correction via dynamic model generation

Michael Lam, Chris Clifford, Ananthan Raghunathan, Germain Fenger, Kostas Adam

JM3, Vol. 16, Issue 03, 033502, (July 2017) https://doi.org/10.1117/12.10.1117/1.JMM.16.3.033502

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Proceedings Article | 24 March 2017 Presentation + Paper

Presentation + Paper

Enabling full field physics based OPC via dynamic model generation

Michael Lam, Chris Clifford, Ananthan Raghunathan, Germain Fenger, Kostas Adam

Proceedings Volume 10143, 1014316 (2017) https://doi.org/10.1117/12.2261222

KEYWORDS: Optical proximity correction, Physics, Extreme ultraviolet, Extreme ultraviolet lithography, Photomasks, Optical simulations, Apodization, Optical aberrations, Wavefront aberrations, Photovoltaics, Computer simulations, Reticles, Scanners, Lithography

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Proceedings Article | 24 March 2017 Presentation + Paper

Presentation + Paper

Effective use of aerial image metrology for calibration of OPC models

Ao Chen, Yee Mei Foong, Thomas Thaler, Ute Buttgereit, Angeline Chung, Andrew Burbine, John Sturtevant, Chris Clifford, Kostas Adam, Peter DeBisschop

Proceedings Volume 10147, 101470Y (2017) https://doi.org/10.1117/12.2258632

KEYWORDS: Photomasks, Optical proximity correction, Data modeling, Metrology, 3D modeling, Semiconducting wafers, Photoresist materials, Calibration, Wafer-level optics, Image processing, Scanners

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SPIE Journal Paper | 16 February 2016

Accurate, full-chip, three-dimensional electromagnetic field model for non-Manhattan mask corners

Michael Lam, Chris Clifford, Mike Oliver, David Fryer, Edita Tejnil, Kostas Adam

JM3, Vol. 15, Issue 02, 021204, (February 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.2.021204

KEYWORDS: 3D modeling, Photomasks, Near field, Electromagnetism, Lithography, Semiconducting wafers, Scattering, Lithographic illumination, Diffraction, Critical dimension metrology

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SPIE Journal Paper | 2 April 2015

Subresolution assist features in extreme ultraviolet lithography

Deniz Civay, Erik Verduijn, Chris Clifford, Pawitter Mangat, Thomas Wallow

JM3, Vol. 14, Issue 02, 023501, (April 2015) https://doi.org/10.1117/12.10.1117/1.JMM.14.2.023501

KEYWORDS: SRAF, Photomasks, Extreme ultraviolet, Printing, Semiconducting wafers, Extreme ultraviolet lithography, Critical dimension metrology, Model-based design, Lithography, Optical lithography

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Proceedings Article | 18 March 2015 Paper

Paper

Accurate, full chip 3D electromagnetic field model for non-Manhattan mask corners

Michael Lam, Chris Clifford, Michael Oliver, David Fryer, Edita Tejnil, Kostas Adam

Proceedings Volume 9426, 94260P (2015) https://doi.org/10.1117/12.2085671

KEYWORDS: 3D modeling, Photomasks, Near field, Critical dimension metrology, Semiconducting wafers, Lithography, Image quality, Data transmission, Electromagnetism, Diffraction

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Proceedings Article | 17 October 2014 Paper

Paper

14-nm photomask simulation sensitivity

John Sturtevant, Peter Buck, Steffen Schulze, David Fryer, Edita Tejnil, Kostas Adam, Michael Lam, Chris Clifford, Mike Oliver, Ana Armeanu, Franklin Kalk, Kent Nakagawa, Guoxiang Ning, Paul Ackmann, Fritz Gans, Christian Buergel

Proceedings Volume 9231, 92310I (2014) https://doi.org/10.1117/12.2066483

KEYWORDS: Photomasks, 3D modeling, Semiconducting wafers, Optical proximity correction, Data modeling, Calibration, Manufacturing, Photoresist materials, Metrology, Refractive index

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Proceedings Article | 31 March 2014 Paper

Paper

Rapid, accurate improvement in 3D mask representation via input geometry optimization and crosstalk

David Fryer, Michael Lam, Kostas Adam, Chris Clifford, Mike Oliver, Christian Zuniga, John Sturtevant, ChangAn Wang, Scott Mansfield

Proceedings Volume 9052, 905216 (2014) https://doi.org/10.1117/12.2046489

KEYWORDS: Photomasks, 3D modeling, Calibration, Source mask optimization, Data modeling, Semiconducting wafers, Performance modeling, Tolerancing, Metrology, Manufacturing

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Proceedings Article | 12 April 2013 Paper

Paper

Accurate 3DEMF mask model for full-chip simulation

Michael Lam, Kostas Adam, David Fryer, Christian Zuniga, Haiqing Wei, Michael Oliver, Chris Clifford

Proceedings Volume 8683, 86831D (2013) https://doi.org/10.1117/12.2013167

KEYWORDS: Photomasks, Polarization, Scattering, Near field, Light scattering, Optical proximity correction, Semiconducting wafers, Systems modeling, Error analysis, Solids

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Proceedings Article | 1 April 2013 Paper

Paper

Evaluation of methods to improve EUV OPC model accuracy

Tamer Coskun, Chris Clifford, Germain Fenger, Gek Soon Chua, Keith Standiford, Ralph Schlief, Craig Higgins, Yi Zou

Proceedings Volume 8679, 86790V (2013) https://doi.org/10.1117/12.2009281

KEYWORDS: Optical proximity correction, Photomasks, Extreme ultraviolet, Calibration, Extreme ultraviolet lithography, Deep ultraviolet, Lithography, Metrology, Data modeling, Semiconducting wafers

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Proceedings Article | 17 April 2012 Paper

Paper

Towards the optical inspection sensitivity optimization of EUV masks and EUVL-exposed wafers

U. Okoroanyanwu, J. Heumann, X. Zhu, C. Clifford, F. Jiang, P. Mangat, R. Ghaskadavi, E. Mohn, R. Moses, O. Wood, H. Rolff, T. Schedel, R. Cantrell, P. Nesladek, N. LiCausi, X. Cai, W. Taylor, J. Schefske, M. Bender, N. Schmidt

Proceedings Volume 8352, 83520V (2012) https://doi.org/10.1117/12.923134

KEYWORDS: Photomasks, Inspection, Semiconducting wafers, Optical inspection, Extreme ultraviolet, Reflectivity, Defect detection, Mirrors, Scanning electron microscopy, Defect inspection

Read Abstract +

Pending the availability of actinic inspection tools, optical inspection tools with 193 nm DUV illumination wavelength are currently used to inspect EUV masks and EUVL-exposed wafers. Due to strong optical absorption, DUV photons can penetrate only a few surface layers of EUV masks, making them sub-optimal for detecting hidden defects embedded within the sub-layers of the mask, the so-called phase defects. Although these phase defects may not be detected by optical inspection tools, they may print on the wafer. Conversely, false and nuisance defects which may not print on the wafer may be detected by optical inspection tools, and by so doing, degrade the inspection sensitivity of the tool to real and critical defects. This paper discusses approaches to optimizing the optical inspection sensitivity of EUV masks, with a view to overcoming some of the absorption limitations of the inspection wavelength and also with a view to enhancing the imaging contrast of the reflected light between the low reflective absorber/antireflection coating stack and the moderately reflective mirror surface of Mo/Si bilayers, capped with a thin Ru layer, and which serves to protect the mirror surface from damage and contamination during mask fabrication and wafer printing processes. The effects of mask absorber/ARC stack thickness on optical inspection contrast are simulated using rigorous coupled wave analysis (RCWA), and compared to experimental results. EUV masks with thin absorber/ARC stacks are observed to have higher inspection contrast, up to 15 % higher than their thicker counterparts, especially as the feature pitch gets smaller. Blank defect inspection performance of tools such as the Siemens DFX40 tool and KLA 617 Teron tool equipped with Phasur module are compared, and correlated with patterned mask inspection data generated from KLA 617 Teron tool. Patterned mask defect sensitivities to the tune of 40 nm and 90 nm were obtained on thin and thick absorber/ARC stacks, respectively. The defect location accuracy of the Teron 617 tool is better than 250 nm (3σ), while the alignment repeatability of the Teron 617 on the fiducials is better than 60 nm (3σ). Printability of mask blank and patterned mask defects on exposed wafers in terms of what and where the defects print, are also presented. Four masks with different absorber and antireflection coating thicknesses, some with substrate and absorber programmed defects of different types and sizes, were fabricated and used to expose resistcoated SiN substrate wafers on full field ASML EUV scanners.

Proceedings Article | 23 March 2012 Paper

Paper

EUV OPC for the 20-nm node and beyond

Chris Clifford, Yi Zou, Azat Latypov, Oleg Kritsun, Thomas Wallow, Harry Levinson, Fan Jiang, Deniz Civay, Keith Standiford, Ralph Schlief, Lei Sun, Obert Wood, Sudhar Raghunathan, Pawitter Mangat, Hui Peng Koh, Craig Higgins, Jeffrey Schefske, Mandeep Singh

Proceedings Volume 8322, 83221M (2012) https://doi.org/10.1117/12.916171

KEYWORDS: Optical proximity correction, Extreme ultraviolet, Photomasks, Deep ultraviolet, Semiconducting wafers, Extreme ultraviolet lithography, Lithography, Critical dimension metrology, Printing, Monte Carlo methods

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Proceedings Article | 20 April 2011 Paper

Paper

Expanding the applications of computational lithography and inspection (CLI) in mask inspection, metrology, review, and repair

Linyong Pang, Danping Peng, Peter Hu, Dongxue Chen, Lin He, Ying Li, Chris Clifford, Vikram Tolani

Proceedings Volume 7971, 79712A (2011) https://doi.org/10.1117/12.879535

KEYWORDS: Photomasks, Inspection, Semiconducting wafers, Optical proximity correction, Scanning electron microscopy, Extreme ultraviolet, Image restoration, Calibration, Metrology, Data modeling

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Proceedings Article | 7 April 2011 Paper

Paper

Compensation for EUV multilayer defects within arbitrary layouts by absorber pattern modification

Linyong Leo Pang, Chris Clifford, Peter Hu, Danping Peng, Ying Li, Dongxue Chen, Masaki Satake, Vikram Tolani, Lin He

Proceedings Volume 7969, 79691E (2011) https://doi.org/10.1117/12.879556

KEYWORDS: Extreme ultraviolet, Photomasks, Semiconducting wafers, Double positive medium, Finite-difference time-domain method, Lithography, Scanning electron microscopy, Extreme ultraviolet lithography, Detection and tracking algorithms, Etching

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Proceedings Article | 25 September 2010 Paper

Paper

Compensation methods using a new model for buried defects in extreme ultraviolet lithography masks

Chris Clifford, Tina Chan, Andrew Neureuther, Ying Li, Danping Peng, Linyong Pang

Proceedings Volume 7823, 78230V (2010) https://doi.org/10.1117/12.868281

KEYWORDS: Finite-difference time-domain method, Double positive medium, Extreme ultraviolet, Photomasks, Reflection, Computer simulations, Semiconducting wafers, Extreme ultraviolet lithography, Ray tracing, Image processing

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A new method for predicting the reflection from an extreme ultraviolet (EUV) multilayer is described which when implemented into the new Defect Printability Simulator (DPS) can calculate the image produced by an EUV mask with a buried defect several orders of magnitude faster than the finite difference time domain (FDTD). A new buried defect compensation method is also demonstrated to correct the in focus image of a line space pattern containing a buried defect. The new multilayer model accounts for the disruption of the magnitude and phase of the reflected field from an EUV multilayer defect. It does this by sampling the multilayer on a non-uniform grid and calculating the analytic complex local reflection coefficient at each point. After this step, the effect of the optical path difference due to the surface defect profile is added to the total reflected field to accurately predict the reflected magnitude and phase at all points on the multilayer surface. The accuracy of the new multilayer model and the full DPS simulator is verified by comparisons to FDTD simulations. The largest difference between the two methods was 0.8nm for predicting the CD change due to a buried defect through focus. This small difference is within the margin of error for FDTD simulations of EUV multilayers. The runtime of DPS is compared to extrapolated FDTD runtimes for many simulation domain sizes and DPS is 4-5 orders of magnitude faster for all cases. For example, DPS can calculate the reflected image from a 1μm x 1μm mask area in less than 30 seconds on a single processor. FDTD would take a month on four processors. The new compensation strategy demonstrated in this work is able to remove all CD error in the simulated image due to a buried defect in a 22nm dense line space pattern. The method is iterative and a full DPS simulation is run for every iteration. After each simulation, the absorber pattern is adjusted based on the difference of the thresholded target image and thresholded defective image. This method is very simple and does not attempt to compensate for the defect through focus, but it does demonstrate the usefulness of a fast simulator for compensation.

Proceedings Article | 23 March 2010 Paper

Paper

Compensation methods for buried defects in extreme ultraviolet lithography masks

Chris Clifford, Tina Chan, Andrew Neureuther

Proceedings Volume 7636, 763623 (2010) https://doi.org/10.1117/12.846671

KEYWORDS: Photomasks, Extreme ultraviolet, Critical dimension metrology, Extreme ultraviolet lithography, Semiconducting wafers, Inspection, 193nm lithography, Lithography, Particles, Wafer-level optics

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Proceedings Article | 23 September 2009 Paper

Paper

Investigation of buried EUV mask defect printability using actinic inspection and fast simulation

Chris Clifford, Tina Chan, Andrew Neureuther, Kenneth Goldberg, Iacopo Mochi, Ted Liang

Proceedings Volume 7488, 74882H (2009) https://doi.org/10.1117/12.829716

KEYWORDS: Photomasks, Critical dimension metrology, Extreme ultraviolet, Inspection, Defect detection, Extreme ultraviolet lithography, High volume manufacturing, Semiconducting wafers, Multilayers, Computer simulations

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SPIE Journal Paper | 1 July 2009

Fast simulation methods and modeling for extreme ultraviolet masks with buried defects

Christopher Clifford, Andrew Neureuther

JM3, Vol. 8, Issue 03, 031402, (July 2009) https://doi.org/10.1117/12.10.1117/1.3152372

KEYWORDS: Finite-difference time-domain method, Extreme ultraviolet, Photomasks, Computer simulations, Ray tracing, Extreme ultraviolet lithography, Lithography, Fourier transforms, Finite element methods, Near field

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Proceedings Article | 18 March 2009 Paper

Paper

Comparison of fast 3D simulation and actinic inspection for EUV masks with buried defects

Chris Clifford, Sandy Wiraatmadja, Tina Chan, Andrew Neureuther, Kenneth Goldberg, Iacopo Mochi, Ted Liang

Proceedings Volume 7271, 72711F (2009) https://doi.org/10.1117/12.813846

KEYWORDS: Monochromatic aberrations, Extreme ultraviolet, Inspection, Photomasks, Spherical lenses, Extreme ultraviolet lithography, Near field, Computer simulations, Lithography, Image analysis

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Proceedings Article | 17 October 2008 Paper

Paper

Smoothing based model for images of buried EUV multilayer defects near absorber features

Chris Clifford, Andrew Neureuther

Proceedings Volume 7122, 71221X (2008) https://doi.org/10.1117/12.801311

KEYWORDS: Finite-difference time-domain method, Extreme ultraviolet, Photomasks, Ray tracing, Multilayers, Computer simulations, Near field, Extreme ultraviolet lithography, Critical dimension metrology, Fourier transforms

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Proceedings Article | 17 October 2008 Paper

Paper

Wafer plane inspection evaluated for photomask production

Emily Gallagher, Karen Badger, Mark Lawliss, Yutaka Kodera, Jaione Tirapu Azpiroz, Song Pang, Hongqin Zhang, Eugenia Eugenieva, Chris Clifford, Arosha Goonesekera, Yibin Tian

Proceedings Volume 7122, 71221B (2008) https://doi.org/10.1117/12.801945

KEYWORDS: Photomasks, Inspection, Semiconducting wafers, Finite-difference time-domain method, Wafer inspection, Manufacturing, Printing, Lithography, Reticles, Optical proximity correction

Read Abstract +

Proceedings Article | 20 March 2008 Paper

Paper

Smoothing based fast model for images of isolated buried EUV multilayer defects

Chris Clifford, Andrew Neureuther

Proceedings Volume 6921, 692119 (2008) https://doi.org/10.1117/12.771530

KEYWORDS: Extreme ultraviolet, Photomasks, Near field, Ray tracing, Finite-difference time-domain method, 3D modeling, Image processing, Etching, Interfaces, Extreme ultraviolet lithography

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Proceedings Article | 30 October 2007 Paper

Paper

Fast three-dimensional simulation of buried EUV mask defect interaction with absorber features

Chris Clifford, Andrew Neureuther

Proceedings Volume 6730, 67301S (2007) https://doi.org/10.1117/12.746486

KEYWORDS: Photomasks, Finite-difference time-domain method, Extreme ultraviolet, Wave propagation, Radio propagation, Near field, Computer simulations, Ray tracing, 3D modeling, Interfaces

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Proceedings Article | 28 March 2007 Open Access

Open Access

Paper

Collaborative platform, tool-kit, and physical models for DfM

Andy Neureuther, Wojtek Poppe, Juliet Holwill, Eric Chin, Lynn Wang, Jae-Seok Yang, Marshal Miller, Dan Ceperley, Chris Clifford, Koji Kikuchi, Jihong Choi, Dave Dornfeld, Paul Friedberg, Costas Spanos, John Hoang, Jane Chang, Jerry Hsu, David Graves, Alan Wu, Mike Lieberman

Proceedings Volume 6521, 652104 (2007) https://doi.org/10.1117/12.721199

KEYWORDS: Design for manufacturing, Photomasks, Device simulation, Computer aided design, Process modeling, Etching, Monochromatic aberrations, Manufacturing, Lithography, Chemical mechanical planarization

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Proceedings Article | 13 March 2007 Paper

Paper

Fast simulation of buried EUV mask defect interaction with absorber features

Chris Clifford, Andrew Neureuther

Proceedings Volume 6517, 65170A (2007) https://doi.org/10.1117/12.711173

KEYWORDS: Finite-difference time-domain method, Photomasks, Near field, Computer simulations, Extreme ultraviolet, Ray tracing, Wave propagation, Fourier transforms, Interfaces, Refractive index

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Showing 5 of 32 publications

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