Mr. Chang-xin Luo Profile

Chang-xin Luo

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Proceedings Article | 15 February 2022 Paper

Research on the properties of Ta2O5 optical films prepared with APS plasma assisted deposition

Yong-gang Pan, Zheng Liu, Wen-cheng Liu, Mian Li, Si-bao Zhang, Chang-xin Luo, Chun-juan Zhang

Proceedings Volume 12166, 1216602 (2022) https://doi.org/10.1117/12.2604831

KEYWORDS: Coating, Refractive index, Thin films, Plasma, Surface roughness

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Ta₂O₅ thin films are widely used in optical and microelectronic industry because of its superior optical and mechanical properties. In this paper, single-layer Ta₂O₅ thin films were prepared by APS plasma assisted electron beam evaporation deposition. Based on the theory of ion energy transfer, the selection criteria of APS process parameters were established. By optimizing APS source parameters, Ta₂O₅ thin films with different characteristics were prepared. The spectral and refractive index dispersion of Ta₂O₅ thin films were analyzed by Cary7000 spectrophotometer. The stress and surface roughness of Ta₂O₅ films were analyzed by Zygo interferometer. Experiment and analysis results showed that the characteristics of Ta₂O₅ thin films are closely related to APS plasma assisted processing parameters. The discharge current and bias voltage of APS source have great influence on the stress and surface roughness of Ta₂O₅ thin films, but have little influence on the spectral characteristics and refractive index dispersion. The influences of preparation parameters on the properties of Ta₂O₅ thin films were analyzed and optimization fabrication parameters were obtained.

Proceedings Article | 9 August 2021 Paper

Research on the properties of HfO2 optical films prepared with APS assisted electron beam evaporation deposition

Yong-gang Pan, Zheng Liu, Mian Li, Wen-cheng Liu, Long Bai, Si-bao Zhang, Chang-xin Luo, Chun-juan Zhang

Proceedings Volume 11912, 1191207 (2021) https://doi.org/10.1117/12.2602069

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HfO₂ thin films are widely used in laser system because of its superior optical and mechanical properties, especially high laser induced damage threshold. In this paper, single-layer HfO₂ thin films were prepared by APS plasma assisted electron beam evaporation deposition. The effects of oxygen charging of electron gun, baking temperature, discharge current of APS source and bias voltage of APS source on optical properties, surface roughness, standing wave electric filed and laser induced damage threshold of HfO₂ thin films were studied by orthogonal experiment. Experiment and analysis results showed that the characteristics of HfO₂ thin films are closely related to the oxygen charging of electron gun, baking temperature and APS assisted processing parameters. Especially, baking temperature, oxygen charging of electron gun and bias voltage of APS source have great influence on laser induced damage threshold. Through the analysis of experimental date, the optimal combination of process parameters for APS assisted electron beam evaporation of HfO₂ optical films were obtained.

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