HfO2 thin films are widely used in laser system because of its superior optical and mechanical properties, especially high laser induced damage threshold. In this paper, single-layer HfO2 thin films were prepared by APS plasma assisted electron beam evaporation deposition. The effects of oxygen charging of electron gun, baking temperature, discharge current of APS source and bias voltage of APS source on optical properties, surface roughness, standing wave electric filed and laser induced damage threshold of HfO2 thin films were studied by orthogonal experiment. Experiment and analysis results showed that the characteristics of HfO2 thin films are closely related to the oxygen charging of electron gun, baking temperature and APS assisted processing parameters. Especially, baking temperature, oxygen charging of electron gun and bias voltage of APS source have great influence on laser induced damage threshold. Through the analysis of experimental date, the optimal combination of process parameters for APS assisted electron beam evaporation of HfO2 optical films were obtained.
The Ta2O5 thin film is one of the most important high refractive materials in the band range from visible to near infrared. In this paper, Ta2O5 thin films were prepared by electron beam thermal evaporation(EBE) technology with different process parameters. The optical performance parameters of Ta2O5 thin films with different process parameters were tested, and the process parameters of the minimum extinction coefficient and the highest laser-induced damage threshold of Ta2O5 thin films were obtained. The results show that when the optimum process parameters are: electron beam current 110 mA, pressure 2.0×10 -2 Pa, substrate temperature 150°C, the extinction coefficient of the prepared Ta2O5 thin film is the minimum; when the optimum process parameters are: pressure 1.0×10 -2 Pa, substrate temperature 150°C, The laser-induced damage threshold (LIDT) of the prepared Ta2O5 thin film is the highest when the electron beam current is 90 mA. The research results have reference significance for the selection of process parameters of Ta2O5 thin film with different the laser-induced damage thresholds.
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