Many companies are ramping their usage of third party wafer foundries for the manufacture of their integrated circuits. As such, new demands of data management and handoff are required. Maintaining a digital record and designing a digital interface with our foundry partners is critical to optimize the tape out and ramp to manufacturing processes. This paper describes the current development of Agere System's 'Foundry Data eXchange' system, which puts structure and consistency around the design data transfer and tape out process. The system streamlines the tapeout process and yields a consistent platform for all data handling. This will lead to greater efficiency and accuracy, saving time during the data handoff. In addition, the system lays the groundwork for the future application of an electronic data handoff with foundry partners.
When considering optical lithography, there is no true substitute for the resolution enhancements afforded by a reduction in actinic radiation. However, as we move below 365 nm i-line systems, the optics and attendant materials considerations become acute. Additionally, there is an obvious economic impetus to breath new life into existing exposure systems. Various optical enhancement schemes have been developed over the past few years for these and other reasons. While many of these are well suited for the patterns and economics of memories, there are a few that enable sub 0.5 kl ASIC imaging. These include: large NA, optical proximity correction, and the deployment of sub- resolution assist features. We will demonstrate a blend of these that will support 280 nm ASIC pattern delineation with i-line (365 nm) systems and binary (non-phase-shift) masks.
At Lucent Technologies, lithography tool performance metric measurements are required on every plate. The QA cell patterning is designed to monitor the lithography tool, and the data is captured within the Mask Information Management System. It allows the manufacturer to use actual production data to determine machine performance trends, and it yields an extremely large sample of plates for SPC purposes. Closure, X vs. Y uniformity, butting, and registration data is reported in this way. The usage of on-product data for machine metrology is demonstrated, and actual production performance of the MEBES 4 TFE is shown.
Long used as a replacement for COP in making 1:1 photomasks, poly(glycidyl methacrylate- co-3-chlorostyrene) (GMC), a negative acting e-beam sensitive resist, has recently been under investigation for additional applications, such as tight tolerance CD masks and 5X reticles. The process for GMC is straightforward and resilient within a manufacturing operation. In addition, the required process dose of 2.5 (mu) C/c2 does not affect exposure time in a limiting way. This study has demonstrated CD uniformity less than 30 nm 3-sigma and showing no CD deviation from 50% - 150% of nominal develop time. GMC shows linear CD growth with over-exposure in the range from 80% to 200% of nominal, with X vs. Y CD tuning accomplished by the use of MEBES auto-tap blanker setting. Preliminary defect results are presented and conclusions are drawn that consider GMC as an easy to use alternative for critical CD layers.
Conference Committee Involvement (2)
Photomask Technology
9 September 2003 | Monterey, California, United States
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