Dr. Gökhan Perçin Profile

Dr. Gökhan Perçin

Product Engineering Director at Cadence Design Systems Inc

SPIE Involvement:

Author

Publications (11)

Proceedings Article | 31 March 2014 Paper

Pattern-based full-chip process verification

Changsheng Ying, Yongjun Kwon, Paul Fornari, Gökhan Perçin, Anwei Liu

Proceedings Volume 9052, 905212 (2014) https://doi.org/10.1117/12.2046045

KEYWORDS: Optical proximity correction, Databases, Image classification, Lithography, Data modeling, Image processing, Semiconductor manufacturing, Optical lithography, Instrument modeling, Logic devices

Read Abstract +

Proceedings Article | 1 April 2013 Paper

Process and proximity correction, and verification for extreme ultraviolet lithography

Gökhan Perçin, Huixiong Dai, Hsu-Ting Huang, Anwei Liu, Ali Mokhberi, Xin Zheng, Chris Ngai

Proceedings Volume 8679, 86790X (2013) https://doi.org/10.1117/12.2011666

KEYWORDS: Photomasks, Calibration, Extreme ultraviolet lithography, Semiconducting wafers, Lithography, Extreme ultraviolet, Ultraviolet radiation, Metals, High volume manufacturing, Semiconductors

Read Abstract +

Proceedings Article | 5 April 2012 Paper

Accurate optical CD profiler based on specialized finite element method

Jesus Carrero, Gökhan Perçin

Proceedings Volume 8324, 83240P (2012) https://doi.org/10.1117/12.918055

KEYWORDS: Finite element methods, Metrology, Critical dimension metrology, Electromagnetism, Dielectrics, Maxwell's equations, Optics manufacturing, Double patterning technology, Chemical elements, Semiconductors

Read Abstract +

Proceedings Article | 30 October 2007 Paper

Polygon-based compensation of proximity and density effects in photomask processes

Kiyoshi Kageyama, Katsuyuki Miyoko, Yoshimitsu Okuda, Gökhan Perçin, Apo Sezginer, Jesus Carrero, Alan Zhu, Anwei Liu

Proceedings Volume 6730, 67302Y (2007) https://doi.org/10.1117/12.746796

KEYWORDS: Photomasks, Databases, Calibration, Process modeling, Critical dimension metrology, Data modeling, Semiconducting wafers, Glasses, Etching, Model-based design

Read Abstract +

Proceedings Article | 20 October 2006 Paper

PPC model build methodology: sequential litho and etch verification

Ali Mokhberi, Vishnu Kamat, Apo Sezginer, Franz Zach, Gökhan Perçin, Jesus Carrero, Hsu-Ting Huang

Proceedings Volume 6349, 63491Z (2006) https://doi.org/10.1117/12.692931

KEYWORDS: Etching, Calibration, Data modeling, Semiconducting wafers, Particles, Scanning electron microscopy, Chromatic aberrations, Performance modeling, Wafer-level optics, Photomasks

Read Abstract +

SPIE Journal Paper | 1 April 2006

Metrology for stepper illumination pupil profile

Gokhan Perçin, Apo Sezginer, Franz Zach

JM3, Vol. 5, Issue 02, 023006, (April 2006) https://doi.org/10.1117/12.10.1117/1.2202641

KEYWORDS: Scanning electron microscopy, Lithographic illumination, Semiconducting wafers, Photomasks, Edge detection, Image processing, Metrology, Diffusion, Denoising, Binary data

Read Abstract +

Proceedings Article | 20 March 2006 Paper

Inverting pupil illumination from resist-based measurements

Gokhan Perçin, Apo Sezginer, Franz Zach

Proceedings Volume 6154, 61543W (2006) https://doi.org/10.1117/12.656495

KEYWORDS: Scanning electron microscopy, Lithographic illumination, Semiconducting wafers, Photomasks, Edge detection, Image processing, Critical dimension metrology, Fiber optic illuminators, Superposition, Lithography

Read Abstract +

Computational models used in process proximity correction require accurate description of the pupil illumination function of the lithography projector. Traditional top-hat approximation for pupil illumination function is no longer sufficient to meet stringent CD control requirements of low-k1 applications. The pupil illumination profile can change across the exposure field, contributing to across-field linewidth variation. We present a measurement of the pupil illumination based on exposing pinhole patterns on a wafer at different dose and defocus settings, and processing SEM images of patterns printed in photoresist. The fundamental principle of the method is Abbe's formulation of image formation: the intensity-image formed in resist is an incoherent, linear superposition of images each one of which is formed by illuminating the photomask by a single plane-wave. A single plane-wave that is incident on the photomask maps to a single point in the Fourier-transform aperture of the illuminator. The pupil-fill of the illuminator is obtained from SEM images by a model-based method consisting of these steps: First, resist edges in the SEM images are detected by an edge detection algorithm based on Perona-Malik diffusion. Coordinates of the points on the resist edge are obtained with respect to a reference ruler. The image intensity at any resist edge is equal to the dose-to-clear. This provides an equation for the image intensity at each point on the edge of a pinhole image. Multiple values of dose and defocus, and multiple points on each resist edge provide a large system of equations. The result of the inversion for a 193nm 0.75 NA stepper with σ = 0.55/0.85 annular illumination at five exposure field locations is presented. The CD difference between the nominal top-hat illumination and the inverted illumination was up to 1.8 nm for 1:1 line and space features ranging from 100nm to 300nm. Variation of the illumination along the long-dimension of the slit of the scanner caused 0.6 nm of CD variation for the same 1:1 dense lines.

Proceedings Article | 20 March 2006 Paper

Building a computational model for process and proximity compensation

Gökhan Perçin, Hsu-Ting Huang, Franz Zach, Apo Sezginer, Ali Mokhberi

Proceedings Volume 6154, 61543N (2006) https://doi.org/10.1117/12.656501

KEYWORDS: Etching, Photoresist materials, Semiconducting wafers, Photomasks, Data modeling, Process modeling, Calibration, Lithography, Cadmium sulfide, Metrology

Read Abstract +

Proceedings Article | 14 March 2006 Paper

Across field CD control improvement for critical level imaging: new applications for layout correction and optimization

Franz Zach, Gökhan Percin, Apo Sezginer

Proceedings Volume 6156, 61560I (2006) https://doi.org/10.1117/12.657268

KEYWORDS: Photomasks, Critical dimension metrology, Resolution enhancement technologies, Lithography, Image processing, Manufacturing, Diffusion, Semiconducting wafers, Optical proximity correction, Process engineering

Read Abstract +

Proceedings Article | 8 September 1998 Paper

Micromachined 2D array piezoelectrically actuated flextensional transducers: new designs

Gokhan Percin, Butrus Khuri-Yakub

Proceedings Volume 3514, (1998) https://doi.org/10.1117/12.323916

KEYWORDS: Silicon, Transducers, Oxides, Tin, Etching, Ions, Optical lithography, Electrodes, Reactive ion etching, Ultrasonography

Read Abstract +

Proceedings Article | 29 June 1998 Paper

Resist deposition without spinning by using novel inkjet technology and direct lithography for MEMS

Gokhan Percin, Tom Soh, Butrus Khuri-Yakub

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312434

KEYWORDS: Tin, Coating, Semiconducting wafers, Photoresist materials, Lithography, Silicon, Microelectromechanical systems, Thin film coatings, Liquids, Inkjet technology

Read Abstract +

Showing 5 of 11 publications

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years